Abstract
The (S $r_{1-x}$C $a_{x}$)Ti $O_3$(SCT) thin films are deposited on Pt-coated electrode(Pt/TiN/ $SiO_2$/ Si) using RF sputtering method with substitutional contents of Ca. The maximum grain of thin films is obtained by substitution of Ca at 15[mol%]. The dielectric constant was increased with increasing the substitutional contents of Ca, while it was decreased if the substitutional contents of Ca exceeded over 15[mo1%]. The dielectric constant changes almost linearly in temperature ranges of -80~ +90[$^{\circ}C$]. The temperature properties of the dielectric loss have a stable value within 0.02 independent of the substitutional contents of Ca. All SCT thin films used in this study show the phenomena of dielectric relaxation with the increase of frequency, and the relaxation frequency is observed above 200(kHz).)..
