• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05c
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• pp.58-62
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• 2002

Pb($Zr_{0.52}Ti_{0.48}$)$O_3$ (PZT) thin films deposited on the Pt/Ti and Ru/$RuO_2$ bottom electrode by rf magnetron sputtering methode. Ru/$RuO_2$ bottom electrode deposited on the p-type wafer as Ru thickness by in-situ process. Our results show that all PZT films indicated perovskite polycrystalline structure with perferred orientation (110) and no pyrochlore phase is observed. A well-fabricated $RuO_2$/PZT/Ru(100nm)/$RUO_2$ capacitor showed a leakage current density in the order of $2.13{\times}10^{-7}A/cm^2$ as 100 kV/cm, a remanent polarization of 7.20 ${\mu}C/cm^2$, and a coercive field of 58.37 kV/cm. The results show that the new Ru/$RuO_2$ bottom electrodes are expected to reduce the degradation ferroelectric fatigue and excellent ferroelectric properties.

• Solar Energy
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• v.19 no.3
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• pp.125-131
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• 1999

This paper deals with a novel structure of poly-Si solar cell. A grain boundary(GB) of poly-Si acts as potential barrier and recombination center for photo-generated carriers. To reduce unwanted side effects at the GB of poly-Si, we employed physical GB removal of poly-Si using chemical solutions. Various chemical etchants such as Sirtl, Yang, Secco, and Schimmel were investigated for the preferential GB etching. Etch depth about 10 ${\mu}m$ was achieved by a Schimmel etchant. After a chemical etching of poly-Si, we used $POCl_3$ for emitter junction formation. This paper used an easy method of top electrode formation using a RF sputter grown ITO film. ITO films with thickness of 300 nm showed resistivity of $1.26{\times}10^{-4}{\Omega}-cm$ and overall transmittance above 80%. Using a preferential GB etching and ITO top electrode, we developed a new fabrication procedure of poly-Si solar cells. Employing optimized process conditions, we were able to achieve conversion efficiency as high as 16.6% at an input power of 20 $mW/cm^2$. This paper investigates the effects of process parameters: etching conditions, ITO deposition factors, and emitter doping densities in a poly-Si cell fabrication procedure.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.17 no.8
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• pp.1968-1973
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• 2013

We present the enhancement of narrowband modulation response of an optical source by integrating a dual-electrode distributed feedback (DFB) laser with an electro-absorption modulator (EAM). The dual-electrode DFB laser exhibits a multiple optical modes owing to a self-pulsation in GHz range. By modulating the laser and modulator sections of the integrated device simultaneously, 20-dB of narrowband modulation response enhancement at 6 GHz with 7-GHz tuning range has been observed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.394-397
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• 2001

In this paper, in-situ deposited Ru/RuO$_2$ bottom electrodes have been investigated as new bottom electrodes for PZT thin film capacitor application. As a comparison, structural and electrical properties of PZT thin films on Pt/Ti and RuO$_2$ bottom electrodes are also investigated. The use of Ru/RuO$_2$ hybrid electrodes showed better electrical properties in compression with RuO$_2$ bottom electrode. With increasing Ru electrode thickness, the PZT thin films showed preferred orientation along the (110) direction and leakage current of PZT thin films were improved. The PZT thin films on Ru (100nm)/RuO$_2$ electrodes exhibited excellent ferroelectric properties such as remant polarization and coercive field of 7.2 C/$\textrm{cm}^2$ and 46.35 kV/cm, respectively.

• Nuclear Engineering and Technology
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• v.45 no.4
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• pp.523-528
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• 2013

The beam position monitor (BPM) is an essential component for the PEFP 100-MeV linac's commissioning. A prototype stripline-type linac BPM was designedfor this purpose. The electrode aperture is 20 mm in diameter, and the electrode is 25 mm long, so it can be installed between Drift Tube Linac (DTL)101 and DTL102, which is the shortest distance. One end of the electrode is connected to the Sub Miniature Type A (SMA) feed through for signal measurement, and the other end is terminated as a short. The signal amplitude of the fundamental component was calculated and compared with that of the second harmonic component. The designed BPM was fabricated and a low-power RF test was conducted. In this paper, the design, fabrication and low power test of the BPM for the PEFP linac are presented.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2003.05a
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• pp.88-92
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• 2003

In this paper, the characteristics of the ZnO films deposited on AI bottom electrode and the temperature effects on the ZnO film growth are presented along with the fabrication and their evaluation of the film bulk acoustic wave resonator (FBAR) devices. All the films used in this work were deposited using a radio-frequency (RF) magnetron sputtering technique. Growth characteristics of the ZnO films are shown to have a strong dependence on the deposition temperatures ranged from room temperature to 35$0^{\circ}C$ regardless of the RF power applied for sputtering the ZnO target. In addition, according to the growth characteristics of the distinguishably different micro-crystal structures and the degree of the c-axis preferred orientation, the deposition temperatures can be divided into 3 temperature regions and 2 critical temperatures in-between. Overall, the ZnO films deposited at/below 20$0^{\circ}C$ are seen to have columnar grains with a highly preferred c-axis orientation where the full width at half maximum (FWHM) of X-ray diffraction rocking curve is 14$^{\circ}$. Based on the experimental findings, several FBAR devices were fabricated and measured. As a result, the FBAR devices show return loss of ~19.5dB at resonant frequency of ~2.05GHz.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.624-627
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• 2003

The BLT thin-films were one of the promising ferroelectric materials with a good leakage current and degradation behavior on Pt electrode. The BLT target was sintered at $1100^{\circ}C$ for 4 hours at the air ambient. $Bi_{3.25}La_{0.75}Ti_3O_{12}$ (BLT) thin-film deposited on $Pt/Ti/SIO_2/Si$ wafer by rf magnetron sputtering method. At annealed $700^{\circ}C$, (117) and (006) peaks appeared the high intensity. The hysteresis loop of the BLT thin films showed that the remanent polarization ($2Pr=Pr^+-Pr^-$) was $16uC/cm^2$ and leakage current density was $1.8{\times}10^{-9}A/cm^2$ at 50 kV/cm with coersive electric field when BLT thin-films were annealed at $700^{\circ}C$. Also, the thin film showed fatigue property at least up to $10^{10}$ switching bipolar pulse cycles under 7 V. Therefore, we induce access to optimum fabrication condition of memory device application by rf-magnetron sputtering method in this report.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.60 no.2
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• pp.344-348
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• 2011

A layer of $TiO_2$ thin film less than ~200nm in thickness, as a blocking layer, was deposited by 13.56 MHz radio frequency magnetron sputtering method directly onto the anode electrode to be isolated from the electrolyte in dye-sensitized solar cells (DSCs). This is to prevent the electrons from back-transferring from the electrode to the electrolyte ($I^-/{I_3}^-$). The presented DSCs were fabricated with working electrode of F:$SnO_2$(FTO) glass coated with blocking $TiO_2$ layer, dye-attached nanoporous $TiO_2$ layer, gel electrolyte and counter electrode of Pt-deposited FTO glass. The effects of blocking layer were studied with respect to impedance and conversion efficiency of the cells. The, electrochemical impedances of DSCs using this electrode were $R_1$: 13.9, $R_2$: 15.0, $R_3$: 10.9 and $R_h$: $82{\Omega}$. The $R_2$ impedance related by electron movement from nanoporous $TiO_2$ to TCO showed lower than that of normal DSCs. The photo-conversion efficiency of prepared DSCs was 5.97% ($V_{oc}$: 0.75V, $J_{sc}$: 10.5 mA/$cm^2$, ff: 0.75) and approximately 1% higher than general DSCs sample.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.90-90
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• 2009

The $Sr_{0.7}Bi_{2.3}Nb_2O_9$(SBN) thin films are deposited on Pt-coated electrode($Pt/Ti.SiO_2/Si$) using RF sputtering method. The dielectric constant of SBN thin films were increased with the increase of annealing temperature. The maximum dielectric constant of SBN thin film is obtained by annealing at 700[$^{\circ}C$]. The dielectric constant and dielectric loss had a stable value within -5~+5[V].

• The Transactions of the Korean Institute of Electrical Engineers
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• v.41 no.7
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• pp.823-828
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• 1992

A thermionic energy converter test station is constructed for the study of electromagnetic energy generation. Of particular interest is the frequency variations due to changes in the interelectrode gap, the electrode temperature, and the cesium vapor pressure. It is found experimentally that the most intense ratio-frequency(rf) oscillations occur at two non-overlapping regions.