Proceedings of the Korean Institute of Information and Commucation Sciences Conference (한국정보통신학회:학술대회논문집)
- 2003.05a
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- Pages.88-92
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- 2003
FBAR Devices Fabrication and Effects of Deposition Temperature on ZnO Crystal Growth for RF Filter Applications
RF 필터응용을 위한 FBAR 소자제작과 증착온도가 ZnO 박막의 결정성장에 미치는 영향
- Munhyuk Yim (Information & Communications University) ;
- Kim, Dong-Hyun (Information & Communications University) ;
- Dongkyu Chai (Information & Communications University) ;
- Mai Linh (Information & Communications University) ;
- Giwan Yoon (Information & Communications University)
- Published : 2003.05.01
Abstract
In this paper, the characteristics of the ZnO films deposited on AI bottom electrode and the temperature effects on the ZnO film growth are presented along with the fabrication and their evaluation of the film bulk acoustic wave resonator (FBAR) devices. All the films used in this work were deposited using a radio-frequency (RF) magnetron sputtering technique. Growth characteristics of the ZnO films are shown to have a strong dependence on the deposition temperatures ranged from room temperature to 35
본 논문에서는 Al 하부전극 상에서 RF magnetron sputtering 기술을 이용한 ZnO 박막 증착 및 공정온도가 ZnO 결정성장에 미치는 영향을 고려하여 제작한 FBAR 소자에 대한 연구를 발표한다. 결과적으로, 20
Keywords
- FBAR;
- ZnO Film;
- Temperature region;
- Critical temperature;
- C-axis preferred growth;
- Resonance characteristic