• Journal of Sensor Science and Technology
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• 제19권1호
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• pp.58-61
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• 2010

This paper describes the fabrication and characteristics of NO sensor using ZnO thin film by RF magnetron sputter system. The sensitivity, working temperature, and response time of sputtered pure ZnO thin film and added catalysts such as Pt, Pd, Al, Ti on those films were measured and analyzed. The sensitivity of pure ZnO thin film at working temperature of $300^{\circ}C$ is 0.875 in NO gas concentration of 0.046 ppm. At same volume of the gas in chamber, measuring sensitivity of 1.87 at $250^{\circ}C$ was the case of Pt/ZnO thin film. The ZnO thin films added with catalyst materials were showed higher sensitivity, lower working temperature and faster adsorption characteristics to NO gas than pure ZnO thin film.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• 제26권4호
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• pp.321-324
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• 2013

In this study, The RF magnetron sputter and evaporator was on glass substrates 30 mm ${\times}$ 30 mm OMO multilayer thin film structure is applied to the low-e. Structural and optical properties, a thin film was produced, the variable was placed into a variable deposition time of the oxide layer. According to the XRD measurement results there is no peak that satisfies the Bragg's law ($2dsin{\theta}=n{\lambda}$) which confirmed that it is an amorphous structure. RMS value of the results of the AFM measurement, has a roughness of less than 2 nm. transmittance measurements results, visible light region an average 80%, IR region 40% showed.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권2호
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• pp.1622-1624
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• 2007

In order to realize effective p-type doping in ZnO thin films, ZnO films were deposited on P-doped Silayers by RF-magnetron sputter deposition technique and annealed at various temperatures. The result indicated that ZnO film annealed at $700^{\circ}C$ showed p-type conduction with a high carrier concentration in the order of $10^{19}\;cm^{-3}$.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.895-897
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• 2008

ZnO films were fabricated using rf-magnetron sputter deposition process with different $N_2$ ambient. N-content in N-doped ZnO films was less than 1%. The wavelength of the highest intensity PL peak of N-doped ZnO was shifted to higher wavelength with increasing $N_2$ flow rate in the deposition ambient. These results indicated that the optical property of ZnO was significantly affected by the defect level created by doping with a very small amount of N.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 1992년도 추계학술대회 논문집
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• pp.7-10
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• 1992

CoNiCr/Cr and CoCrTa/Cr for longitudinal magnetic recording media were. prepared on Coming 7059 glass by RF magnetron sputtering. The thickness of Cr underlayer was varied from 500 to $3000{\AA}$ and. that of magnetic layer was $700{\AA}$. Coercivity and squareness were measured using V.S.M.(vibrating sample magnetometer). The coercivity of films increased with increasing Cr thickness when the films were unannealed. The coercivity of the films annealed in a 10 mtorr vacuum increased initially with annealing time and then saturated with further increase in annealing time. The coercivity value difference between the unannealed and annealed films increased with increasing the thickness of Cr underlayer No significant change was found in squareness after anneal, regardless of Cr underlayer thickness.

• Proceedings of the KIEE Conference
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• 대한전기학회 2015년도 제46회 하계학술대회
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• pp.1145-1146
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• 2015

In this study, HAZO thin films were deposited on glass substrates at room temperature via co-sputtering with RF magnetron sputter. The effects of additive oxygen gas in sputtering on the structural and optical characteristics of HAZO thin films were investigated using X-ray diffraction and UV/Vis spectrometer. The experimental results confirmed that the hafnium oxides formed in the HAZO films when they were deposited with oxygen gas, which affected on the structure and transmittance of the films.

• Proceedings of the Korean Vacuum Society Conference
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.355.1-355.1
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• 2014

Zirconium nitride (ZrN)는 높은 녹는점과 기계적 강도 그리고 내식성을 가져 부품 산업계에서 hard coating에 이용된다. 또한 금속과 같은 전기 전도성을 가지므로 초고집적소자의 확산방지막에 이르기까지 많은 응용이 되고 있다. 본 실험에서는 Si 기판 위에rf magnetron sputter를 사용하여 Zr박막을 증착 하였으며 질소 유량을 변화시키며 Zirconium nitride 박막을 증착하였다. 증착된 박막의 질소 유량변화에 따른 nano-electrotribology 특성변화를 관찰하기 위해 nano-indenter를 사용하였다. 또한 Weibull statistics을 사용하여 박막의 균일성을 검증하였다. 질소 유량이 각각 0, 0.5, 5 sccm으로 증가하는 동안 surface hardness는 12.37, 10.49, 12.14 GPa로 변화하였다. 이때, 박막의 elastic modulus는 175.27, 163.94, 172.18 GPa로 각각 변화하였다. 이러한 결과는 질소 유량에 따라zirconium nitride가 여러 상으로 생성되는 것으로 해석할 수 있다.

• Proceedings of the Korean Vacuum Society Conference
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.423-423
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• 2012

ZnO, SnO2, In2O3:Sn와 같은 투명하고 전도성이 있는 박막은 panel display, 전자발광소자, 박막트랜지스터, 태양전지 등의 전극물질로서 폭넓게 사용되고 있다. 이러한 전극 물질을 이용하는 광전자소자의 성능을 개선하기 위해서는 가시광선영역에서 광투과율이 높고, 전기전도도가 좋아야 한다. 최근 ZnO, SnO2, In2O3, MgO, Ga2O3 등으로 이루어진 3원 또는 다원화합물로 제조된 산화물 박막이 새로운 투명한 전도성 박막으로 많은 관심을 끌고 있다. 본 연구에서는 Ga2O3 박막을 radio-frequency magnetron sputtering 방법을 이용하여 증착하였다. 기존에 사용되던 ceramic target을 개선하여 powder target을 사용하였다. 반응가스는 순수하게 Ar 가스만 사용하였고, Sapphire(0001) 기판을 사용하였다. 초기에는 flat한 layered 구조로 증착이 이루어졌으나, 증착시간이 20분이 지나면서부터는 밤송이 모양을 가지는 나노구조체가 생성되기 시작하였고, 이후 나노 밤송이의 밀도가 점차 증가하였다. Ga2O3 나노 밤송이의 특성에 대하여 발표할 예정이다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.I
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• pp.378-380
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• 2005

Diamond like carbon (DLC) films are known that they show homogeneous alignment property when they are irradiated by Ar ion beam. The DLC films in most of studies were deposited by CVD and contain large mount of hydrogen. In order to identity the hydrogen effect on alignment property, DLC films is deposited by RF magnetron sputter using various ratio of Ar and H2 as reactive gas. DLC films are characterized by FT-IR, Raman and contact angle. Alignment property is estimated by measuring pretilt angle.

• Korean Journal of Crystallography
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• 제10권2호
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• pp.136-144
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• 1999

고주파 마그네트론 스퍼터법을 이용한 Al:ZnO(AZO) 박막 증착시, 증착 조건에 따른 미세구조 변화를 조사하였으며, 이를 전기적 광학적 성질과 상관하여 고찰하였다. 박막은 기판 온도가 증가함에 따라 c축이 기판표면에 수직으로 놓이는 주상구조로 성장하였으며, 스퍼터 파워가 증가함에 따라 증착 속도와 입자의 크기가 증가한 반면 결정성은 저하되었다. 증착된 박막은 가시광선영역에서 85% 이상의 광 투과도를 나타내었으며 Al 첨가에 의해 광학적 밴드갭이 약 0.15 eV 증가하였다. 주상구조로 성장한 입자들은 저각 입계(low angle grain boundary)와 특수 입계(special grain boundary)를 형성하였으며, 특히 Σ=7 [001] (210)A/(110)B 입계의 규칙적인 원자배열 및 원자이완을 HRTEM을 이용하여 고찰하였다.