• Title/Summary/Keyword: rf magnetron

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Effect of RF Power on the Structural, Optical and Electrical Properties of Amorphous InGaZnO Thin Films Prepared by RF Magnetron Sputtering (RF 마그네트론 스퍼터링으로 증착한 비정질 InGaZnO 박막의 구조적, 광학적, 전기적 특성에 미치는 RF 파워의 영향)

  • Shin, Ji-Hoon;Cho, Young-Je;Choi, Duck-Kyun
    • Korean Journal of Metals and Materials
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    • v.47 no.1
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    • pp.38-43
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    • 2009

  • To investigate the effect of RF power on the structural, optical and electrical properties of amorphous InGaZnO (a-IGZO), its thin films and TFTs were prepared by RF magnetron sputtering method with different RF power conditions of 40, 80 and 120 W at room temperature. In this study, as RF power during the deposition process increases, the RMS roughness of a-IGZO films increased from 0.26 nm to 1.09 nm, while the optical band-gap decreased from 3.28 eV to 3.04 eV. In the case of the electrical characteristics of a-IGZO TFTs, the saturation mobility increased from $7.3cm^2/Vs$ to $17.0cm^2/Vs$, but the threshold voltage decreased from 5.9 V to 3.9 V with increasing RF power. It is regarded that the increment of RF power increases the carrier concentration of the a-IGZO semiconductor layer due to the higher generation of oxygen vacancies.

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Effects of RF Power on Physical and Electrical Characteristics of TiC Thin Films Deposited by Magnetron Sputtering (마그네트론 스퍼터링법으로 증착시킨 TiC 박막의 물리적, 전기적 특성에서 RF 파워의 영향)

  • Kim, Nam-Hoon;Park, Yong Seob
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.27 no.7
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    • pp.458-461
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    • 2014

  • TiC thin films were deposited on Si wafer by unbalanced magnetron sputtering (UBMS) system with two targets of graphite and titanium. During the TiC sputtering, the RF power was varied from 100 W to 175 W and the physical and electrical properties of TiC films were investigated. The hardness and rms surface roughness of TiC films were improved with increasing RF power and the maximum hardness about 24 GPa and the minimum rms surface roughness about 1.2 nm were obtained. The resistivity of TiC films was decreased with increasing RF power. Consequently, the physical and electrical properties of TiC film wewe improved with increasing RF power.

  • https://doi.org/10.4313/JKEM.2014.27.7.458 인용 PDF KSCI

A Study on the Characteristics of Ti Films Deposited by a DC Magnetron Sputtering Assisted with RF Voltage (고주파 마그네트론 스퍼터장치로 증착한 Ti 박막의 특성에 관한 연구)

  • Bae, Chang-Hwan;Lee, Ju-Hee;Han, Chang-Suk
    • Journal of the Korean Society for Heat Treatment
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    • v.22 no.3
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    • pp.143-148
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    • 2009

  • We have fabricated Ti metal films on Cu wire substrates by using a RF magnetron sputtering method at different RF powers (0, 30 and 60 W) in a high vacuum, and we have investigated the thin film characteristics and resistivity. The ion bombardment effect is increased by the method to superimpose RF power to DC power applied to two poles of the base; thus, the thin film is deposited at sputtering gas pressures below 1 Pa. Moreover, the thin film formation of the multilayer structure becomes possible by gradually injecting the RF power, and the thin film quality is improved.

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