• Korean Journal of Materials Research
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• v.23 no.9
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• pp.477-482
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• 2013

We investigated the detection properties of nitrogen monoxide (NO) gas using transparent p-type $CuAlO_2$ thin film gas sensors. The $CuAlO_2$ film was fabricated on an indium tin oxide (ITO)/glass substrate by pulsed laser deposition (PLD), and then the transparent p-type $CuAlO_2$ active layer was formed by annealing. Structural and optical characterizations revealed that the transparent p-type $CuAlO_2$ layer with a thickness of around 200 nm had a non-crystalline structure, showing a quite flat surface and a high transparency above 65 % in the range of visible light. From the NO gas sensing measurements, it was found that the transparent p-type $CuAlO_2$ thin film gas sensors exhibited the maximum sensitivity to NO gas in dry air at an operating temperature of $180^{\circ}C$. We also found that these $CuAlO_2$ thin film gas sensors showed reversible and reliable electrical resistance-response to NO gas in the operating temperature range. These results indicate that the transparent p-type semiconductor $CuAlO_2$ thin films are very promising for application as sensing materials for gas sensors, in particular, various types of transparent p-n junction gas sensors. Also, these transparent p-type semiconductor $CuAlO_2$ thin films could be combined with an n-type oxide semiconductor to fabricate p-n heterojunction oxide semiconductor gas sensors.

• Korean Journal of Materials Research
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• v.24 no.1
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• pp.19-24
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• 2014

We report the nitrogen monoxide (NO) gas sensing properties of p-type CuO-nanorod-based gas sensors. We synthesized the p-type CuO nanorods with breadth of about 30 nm and length of about 330 nm by a hydrothermal method using an as-deposited CuO seed layer prepared on a $Si/SiO_2$ substrate by the sputtering method. We fabricated polycrystalline CuO nanorod arrays at $80^{\circ}C$ under the hydrothermal condition of 1:1 morality ratio between copper nitrate trihydrate [$Cu(NO_2)_2{\cdot}3H_2O$] and hexamethylenetetramine ($C_6H_{12}N_4$). Structural characterizations revealed that we prepared the pure CuO nanorod array of a monoclinic crystalline structure without any obvious formation of secondary phase. It was found from the gas sensing measurements that the p-type CuO nanorod gas sensors exhibited a maximum sensitivity to NO gas in dry air at an operating temperature as low as $200^{\circ}C$. We also found that these CuO nanorod gas sensors showed reversible and reliable electrical response to NO gas at a range of operating temperatures. These results would indicate some potential applications of the p-type semiconductor CuO nanorods as promising sensing materials for gas sensors, including various types of p-n junction gas sensors.

• Journal of the Korean Electrochemical Society
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• v.1 no.1
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• pp.8-13
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• 1998

This work presents the way how to evaluate the degree of reversibility of the discharging process undergone by the nickel hydroxide film cathodically deposited on pure nickel as a positive electrode for electrochemical capacitor using the combined cyclic voltammetry and potential drop method, supplemented by galvanostatic discharge and open-circuit potential transient methods. The time interval necessary just to establish the current reversal of anodic to cathodic direction from the moment just after applying the potential inversion of anodic to cathodic direction, was obtained on cyclic voltammogram. The cathodic charge density passed upon dropping the applied potential, was calculated on potentiostatic current density-time curve. Both the time interval and the cathodic charge density in magnitude can be regarded as being measures of the degree of reversibility of the discharging process undergone by the positive active material for supercapacitor, i.e. , the longer the time interval is, the lower is the degree of reversibility and the greater the cathodic charge density is, the higher is the degree of reversibility. From the applied potential dependences of the time interval and cathodic charge density, discharge at $0.42 V_{SCE}$ was determined to be the most reversible.

• Bulletin of the Korean Chemical Society
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• v.18 no.4
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• pp.385-389
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• 1997

We report on the development of a new method to control the coverage of a metal film prepared with immersion method. An Sb species in solution adsorbed irreversibly at an open circuit potential (∼0.2 V) as an oxygenous Sb(Ⅲ) on a clean Au electrode, and the adsorbates showed voltammetric features in the potential range from 0.1 V to - 0.4 V. The full coverage of the Sb adsorbates was ∼0.45. On the contrary, the Sb species in solution did not adsorb at all on iodine-covered Au electrode surfaces, when the iodine coverages were more than 0.25. As the iodine coverage decreased below 0.25, however, the irreversible adsorption of Sb took place and the coverage of Sb increased accordingly. This electrochemical behavior has been interpreted as the penetration of the adsorbing Sb species in solution through open spaces among the iodine adlattices of coverages less than 0.25. With the manipulation of the iodine coverage, the controllable range of Sb coverage was from 0 to 0.45, i.e. the full coverage of Sb. In addition, the reversible deposition of Sb on an iodine-saturated Au electrode with voltammetric scan has been observed, which is contrasted with the adsorptive behavior of Sb on the clean Au electrode.

• The Journal of the Korea institute of electronic communication sciences
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• v.9 no.4
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• pp.447-454
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• 2014

Recently most of functional synthesis methods for quantum circuit realization have a tendency to adopt the declarative functional expression more suitable for computer algorithms, so it's difficult to analysis synthesized quantum functions. This paper presents a new functional representation of quantum circuits compatible with simple architecture and intuitive thinking. The proposal of this paper is a new functional synthesis development by using the control functions as the power of corresponding to affine-controlled quantum gates based on the mathematical substitution of serial-product matrix operation over the target line for the arithmetic and modulo-2 ones between power functions of unitary operators. The functional synthesis algorithm proposed in this paper is useful for the functional expressions and synthesis using both of reversible and irreversible affine-controlled NCV-quantum gates.

• Korean Journal of Materials Research
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• v.15 no.8
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• pp.528-535
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• 2005

It is inclined to increase that use of hazardous substances such as lead(Pb), mercury (Hg), cadmium(Cd) etc. are prohibited in the electronics according to environmental friendly policies of an advanced nation for protecting environment of earth. As this reasons, many researches for ensuring the reliability were proceeding in Pb free soldering process. n the flux remains on the PCB(printed circuit board) in the soldering process or the electronics exposed to corrosive environment, it becomes the reasons of breakdown or malfunction of the electronics caused by corrosion. Therefore in this studies we researched the polarization and Tafel properties of Sn40Pb and SnCu system solders based on the electrochemical theory. The experimental polarization curves were measured in distilled ionized water and 1 mole $3.5 wt\%$ NaCl electrolyte of $40^{\circ}C$, pH 7.5. Ag/AgCl and graphite were utilized by reference and counter electrodes, respectively. To observe the electrochemical reaction, polarization test was conducted from -250mV to +250mV. From the polarization curves composed of anodic and cathodic curves, we obtained Tafel slop, reversible electrode potential(Ecorr) and exchange current density((cow). In these results, we compared the corrosion rate of SnPb and SnCu solders.

• Journal of the Korean Society of Fisheries and Ocean Technology
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• v.31 no.2
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• pp.190-198
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• 1995

Many industrial servo amplifiers employ power transister as output device. Thyristor converters are not adopted to drive servo motor, although thyristor is superior to power TR in power rating, noise immunity, price, and size. The reason is, thyristor has no ability of self turn - off. Here in this paper line commutation, in which thyristor is turned off naturally since cathode voltage is higher than anode as time goes by, is employed to turn on thyristor with a delicate sequence. We developed thyristor servo amplifier which does not cause any damage on thyristor because it is designed to prevent triggering the two SCRs in the same arm simultaneously. And it was made clearly how to trigger SCR without any power line shorting and also harmonic analysis is carried out with the aid of FFT analyzer and proved that it can be used even severe reactive load. The designed circuit operated as a good DC amplifier in conventinal servomotor and the results can be use as a position control system application.

• Journal of the Microelectronics and Packaging Society
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• v.28 no.4
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• pp.41-45
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• 2021

In this study, in order to secure the high reliability of the memristor, we adopted a patterned lithium filament seed layer as the main agent for resistive switching (RS) characteristic on the 30 nm thick ZrO₂ thin film at the device manufacturing stage. Lithium filament seed layer with a thickness of 5 nm and an area of 5 ㎛ × 5 ㎛ were formed on the ZrO₂ thin film, and various electrode areas were applied to investigate the effect of capacitance on filament type memristive behavior in the parallel memristive circuit of memristor and capacitor. The RS characteristics were measured in the samples before and after 250℃ post-annealing for lithium metal diffusion. In the case of conductive filaments formed by thermal diffusion (post-annealed sample), it was not available to control the filament by applying voltage, and the other hand, the as-deposited sample showed the reversible RS characteristics by the formation and rupture of filaments. Finally, via the comparison of the RS characteristics according to the electrode area, it was confirmed that capacitance is an important factor for the formation and rupture of filaments.

• Korean Chemical Engineering Research
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• v.60 no.2
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• pp.217-222
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• 2022

It is very important to analyze the OCV change behavior during the open circuit potential holding (OCV holding) process, which accelerates the evaluation of the electrochemical durability of the PEMFC membrane. In this study, an empirical formula using the experimental data of three MEAs with different durability was created and compared. The durability evaluation time of the reinforced membrane MEA without radical scavenger inside the membrane was 383 h, and the durability evaluation time of the reinforced membrane MEA with radical scavenger inside the membrane was 1,000 and 1,650 h, respectively. The degradation of the membrane was divided into the reversible degradation that can be recovered by activation and the irreversible degradation that is not recovered. The irreversible degradation of the membrane was indicated by an increase in hydrogen permeability, and the change in hydrogen permeability was similar to the irreversible degradation constant c of all three MEAs. The initiation of irreversible deterioration without recovery is indicated by an increase in hydrogen permeability, and the OCV is not recovered due to an increase in hydrogen permeability, so the slope of the OCV recovery line (ORL) decreases, which can be confirmed by an increase in the constant c value of the empirical formula.