• International Journal of Internet, Broadcasting and Communication
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• v.4 no.1
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• pp.1-2
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• 2012

A speaker is a system which produces sound through electromechanical operations. It transforms electronic signals into audible sound signals. Almost all speakers are three dimensional. These days, many mobile electronic devices such as mobile electronic devices have become smaller and thinner. A problem with this miniaturization, however, is that the volume of speakers has also decreased. In contrast to conventional three dimensional speakers, we have invented a new type of two dimensional flexible speaker by utilizing the reverse piezoelectric effect.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.6
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• pp.503-508
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• 2008

In order to reduce the piezoelectric field originated from the well layer which resides in InGaN/GaN light emitting diode, InGaN/GaN superlattice buffer layers were grown at the bottom and the top of the active layer. Measuring the photoluminescence spectra with different reverse bias voltages clearly revealed the condition of the flat band under which the transition energy is maximized and the linewidth is minimized. Accordingly, the piezoelectric field of $In_{0.15}Ga_{0.85}N$ in our sample was estimated as -1.08 MV/cm. It is less than half the value reported in the previous studies, and it is evidenced that the strain has reduced due to the superlattice buffer layers.

• Journal of the Korean Society of Industry Convergence
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• v.26 no.1
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• pp.193-199
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• 2023

In this study, an analysis was conducted to analyze the structural stability of the piezoelectric power generation module and to determine the optimal burying hole interval for concrete, the installation site of the power generation module. A piezoelectric element refers to a functional ceramic having a piezoelectric direct effect that converts mechanical energy into electrical energy and a piezoelectric reverse effect. In the analysis of the piezoelectric power generation module, the load condition was applied with about 16 tons and a total of 10 wheels in consideration of the container trailer. The purpose was to evaluate the stability of major components of the piezoelectric power generation module through finite element analysis. In order to determine the optimal burying location of the concrete ground for burying the piezoelectric power generation module, the stability of the ground structure according to the distance of the holes was determined. As a result of the analysis, the maximum stress of the piezoelectric power generation module was generated in the support spring, showing a stress of about 276.7 MPa. It was found that the spacing of holes for embedding the piezoelectric power generation module should be set to a minimum of 100 mm or more.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.11
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• pp.1048-1055
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• 2005

The formula to calculate a variation of optical path length of single crystal by the electric field was derived by this study. The formula was applied to $Bi_{12}SiO_{20}$ single crystal. The results are as follows. In case of the applied electric field in the body diagonal direction and the passing light along the same direction, the variation of optical path length had the largest value. The symmetry of the space distribution of optical path length satisfied $E3C_2\;8C_3$, the set of elements of the symmetry of $Bi_{12}SiO_{20}$ single crystal. The property which gave the largest influence to the variation of optical path length is the strain of length by the Inverse piezoelectric effect. The second influence, is the variation of the refractive index by the electro-optic effect. The variation of optical path length by the inverse piezoelectric effect and by the electro-optic effect have a reverse sign each other.

• Smart Structures and Systems
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• v.25 no.1
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• pp.97-104
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• 2020

Due to the superior properties of nanoparticles, using them has been increased in concrete production technology. In this study, the effect of zinc oxide (ZnO) nanoparticles on the mechanical and smart properties of concrete was studied. At the first, the ZnO nanoparticles are dispersed in water using shaker, magnetic stirrer and ultrasonic devices. The nanoparticles with 3.5, 0.25, 0.75, and 1.0 volume percent are added to the concrete mixture and replaced by the appropriate amount of cement to compare with the control sample without any additives. In order to study the mechanical and smart properties of the concrete, the cubic samples for determining the compressive strength and cylindrical samples for determining tensile strength with different amounts of ZnO nanoparticles are produced and tested. The most important finding of this paper is about the smartness of the concrete due to the piezoelectric properties of the ZnO nanoparticles. In other words, the concrete in this study can produce the voltage when subjected to mechanical load and vice versa it can induce the mechanical displacement when subjected to external voltage. The experimental results show that the best volume percent for ZnO nanoparticles in 28-day samples is 0.5%. In other words, adding 0.5% ZnO nanoparticles to the concrete instead of cement leads to increases of 18.70% and 3.77% in the compressive and tensile strengths, respectively. In addition, it shows the best direct and reverse piezoelectric properties. It is also worth to mention that adding 3.5% zinc oxide nanoparticles, the setting of cement is stopped in the concrete mixture.

• Journal of IKEEE
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• v.22 no.1
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• pp.205-208
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• 2018

In this work, we performed reverse- and forward-gate bias stress tests on normally-off AlGaN/GaN high electron mobility transistors(HEMTs) with p-AlGaN-gate for reliability assessment. Inverse piezoelectric effect, commonly observed in Schottky-gate AlGaN/GaN HEMTs during reverse bias stress, was not observed in p-AlGaN-gate AlGaN/GaN HEMTs. Forward gate bias stress tests revealed distinct degradation of p-AlGaN-gate devices exhibiting sudden increase of gate leakage current. We suggest that forward gate bias stress tests should be performed to define the failure criteria and assess the reliability of normally off p-AlGaN-gate GaN HEMTs.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.124-124
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• 2010

Much interest has been focused on InGaN-based materials and their quantum structures due to their optoelectronics applications such as light emitting diode (LED) and photovoltaic devices, because of its high thermal conductivity, high optical efficiency, and direct wide band gap, in spite of their high density of threading dislocations. Build-in internal field-induced quantum-confined Stark effect in InGaN/GaN quantum well LED structures results in a spatial separation of electrons and holes, which leads to a reduction of radiative recombination rate. Therefore, many growth techniques have been developed by utilizing lateral over-growth mode or by inserting additional layers such as patterned layer and superlattices for reducing threading dislocations and internal fields. In this work, we investigated various characteristics of InGaN multiple quantum wells (MQWs) LED structures grown on selectively wet-etched porous (SWEP) GaN template layer and compared with those grown on non-porous GaN template layer over c-plane sapphire substrates. From the surface morphology measured by atomic force microscope, high resolution X-ray diffraction analysis, low temperature photoluminescence (PL) and PL excitation measurements, good structural and optical properties were observed on both LED structures. However, InGaN MQWs LED structures grown on SWEP GaN template layer show relatively low In composition, thin well width, and blue shift of PL spectra on MQW emission. These results were explained by rough surface of template layer, reduction of residual compressive stress, and less piezoelectric field on MQWs by utilizing SWEP GaN template layer. Better electrical properties were also observed for InGaN MQWs on SWEP GaN template layer, specially at reverse operating condition for I-V measurements.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.20 no.3
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• pp.513-519
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• 2019

Typically, contaminated sediments cause clogging of the drain pipe, which increases the residual water pressure in the drain pipe; this study constructed a system for improving drainage efficiency of tunnels by reducing physical and chemical obstructions through ultrasonic energy generated by a PVDF film. The developed hybrid drainage system utilized a PVDF material film fused with an existing drainage tunnel and maintenance system resulting in the ability to initialize the reverse piezoelectric effect, which was evaluated through an on site application. In order to investigate the maintenance performance of the tunnel drainage system, contaminated sediments were simulated in a drainage pipe to test the effect of ultrasonic conditions on drainage efficiency in the laboratory. As a result of applying the developed portable equipment, the ultrasonic energy was generated for about 20 minutes resulting in a reduction of 74.62% of the contaminated sediments and improving drainage efficiency. From the tunnel, acoustic pressure measurements were taken to calculate the response rate while taking into account the laboratory results. In addition, PVDF film was attached to the transverse and longitudinal side of the drainage pipes where contaminated sediments occur most often in the field tunnel. these calculations show contaminant removal was 90% effective.