Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Measurement of Piezoelectric Effect and Reduction of Strain in InGaN/GaN Quantum Well with Superlattice Buffer

초격자 Buffer를 사용한 InGaN/GaN 양자우물에서 Piezoelectric 효과의 측정과 Strain 감소에 대한 연구

  • 공경식 (한국외국어대학교 전자물리학과) ;
  • 안주인 (한국외국어대학교 전자물리학과) ;
  • 이석주 (한국외국어대학교 전자물리학과)
  • Published : 2008.06.01
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Abstract

In order to reduce the piezoelectric field originated from the well layer which resides in InGaN/GaN light emitting diode, InGaN/GaN superlattice buffer layers were grown at the bottom and the top of the active layer. Measuring the photoluminescence spectra with different reverse bias voltages clearly revealed the condition of the flat band under which the transition energy is maximized and the linewidth is minimized. Accordingly, the piezoelectric field of $In_{0.15}Ga_{0.85}N$ in our sample was estimated as -1.08 MV/cm. It is less than half the value reported in the previous studies, and it is evidenced that the strain has reduced due to the superlattice buffer layers.

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References

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