• The Transactions of The Korean Institute of Electrical Engineers
• /
• v.60 no.8
• /
• pp.1566-1571
• /
• 2011

The objective of this paper is to present a quantitative analysis leading to the assessment of optimum terminating impedances in the design of active frequency multipliers. A brief analysis of the basic principal of the GaAs FET frequency multiplier is presented. The analysis is outlined in bias optimization and drive power determination. Utilizing the equivalent circuit model of GaAs FET, we have simulated the optimized load impedance for the maximum output of the active frequency multipliers. The C-class and reverse C-class frequency doublers have been fabricated and the load impedances have been measured. The experimental results are in good agreement with the estimated results in the simulation with the accuracy of 90%.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.21 no.6
• /
• pp.503-508
• /
• 2008

In order to reduce the piezoelectric field originated from the well layer which resides in InGaN/GaN light emitting diode, InGaN/GaN superlattice buffer layers were grown at the bottom and the top of the active layer. Measuring the photoluminescence spectra with different reverse bias voltages clearly revealed the condition of the flat band under which the transition energy is maximized and the linewidth is minimized. Accordingly, the piezoelectric field of $In_{0.15}Ga_{0.85}N$ in our sample was estimated as -1.08 MV/cm. It is less than half the value reported in the previous studies, and it is evidenced that the strain has reduced due to the superlattice buffer layers.

• The Transactions of The Korean Institute of Electrical Engineers
• /
• v.65 no.11
• /
• pp.1919-1924
• /
• 2016

In general, Diode rectifier has been applied to DC traction power supply system. Diode has some characteristics which is voltage drop in inverse proportion of load because of non-controlled switch, and cannot flow a current in reverse bias. So, voltage drop occurs frequently, and regenerated power cannot use in substation. The PWM rectifier is able to control output voltage constantly to reduce voltage drop and to use regeneration power without additional inverter. This paper proposes analysis algorithm for DC traction power supply system with PWM rectifier.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
• /
• v.20 no.9
• /
• pp.40-44
• /
• 2006

This study investigated a new tuneable bandpass filter based on coplanar waveguide coupled line structure, and using the varactor diode for tuning the center frequency of the filter. The filter was designed by a commercial simulator and had a tuning range of 180[MHz] from 0.95[GHz] to 1.13[GHz]. The filter acceptable values regarding the insertion loss was less than 3[dB] and its return loss greater than 12[dB]. The figure of merit of the implemented tuneable filter increased with the reverse bias voltage up to 14[V] on the varactor diode. The proposed filter has a promising future as it can be used in integration processes and in various materials as substrate.

• 전기의세계
• /
• v.26 no.3
• /
• pp.76-83
• /
• 1977

The choice of control method and circuit must be decided after a broad inspection with the characteristics of load and control elements as well as that of electric and mechanical nature. In the present study, Pulse width modulated(PWM) SCR chopper was chosen and for the electric commutation, Jones' forced method was taken bacause of its having enough reverse bias energy. Objectives of experimentation by this system are; 1) the condition of SCR as a gate trigger pulse. 2) the observation of phenomena at the time of forced commutation 3) the experimentation on characteristics of speed control by PWM chopper. Above experimentation shows good characteristics, however, in the limit of narrow gap between the ON and OFF pulses, a complete control was not possible. So, that must be the point to be studied further alone with the harmonics influence.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.14 no.1
• /
• pp.58-63
• /
• 2001

We have investigated the photoinduced birefrinence by the electric field effects in chalcogenide thin films. The electric field effects have investigated the various applied bias voltages(forward and reverse) in chalcogenide thin films. A pumping (inducing) and a probing bean were using a linearly polarized He-Ne laser light (633nm) and semiconductor laser light (780nm), respectively. The result was shown that the birefringence had a higher value in DC +2V than the others, Also, we obtained the birefringence in the electric field effects by various voltages. In addition, we have discussed the anisotropy property of chalcogenide thin films by the electric field effects.

• Journal of the Korean Institute of Telematics and Electronics
• /
• v.26 no.11
• /
• pp.1652-1657
• /
• 1989

In this research, the PN junction type Si photodiodes have been fabricated on the low doped P type(Na=7x10**14 cm**-3) and N type (Nd=4x10**14cm**-3) (100) silicon substrates. We could find out that the dark current was lower in the N type substrate than in the P type substrate. Some well designed photodiodes showed relatively good optical and electronic characteristics that the dark current is lower than 5 nA at 10V of reverse bias condition, that the breakdown voltage is higher than 250V, and that the quantum efficiency is larger than 86% at the wavelength of $6328{\AA}$

• 한국정보디스플레이학회:학술대회논문집
• /
• 2008.10a
• /
• pp.517-520
• /
• 2008

A voltage-programming pixel circuit, which compensates the threshold voltage shift of TFTs and the degradation of OLED, is proposed for large sized a-Si:H active matrix organic light emitting diode (AMOLED) applications. Considering threshold voltage variation (or shift), OLED degradation and reverse bias annealing, HSPICE simulation results indicate that luminance error of every gray level is less than 0.4 LSB under the condition of +1V threshold voltage shift and from -0.2 LSB to 2.6 LSB within 30% degradation of OLED in the case of 40-inch full HDTV condition.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.11a
• /
• pp.151-151
• /
• 2008

바이폴러 트랜지스터(이하 BJT)의 고온 콜렉터-베이스 역전압 수명시험을 실시하였고, 수영시험 전후의 특성평가를 통해 BJT의 고장모드를 분석하였다. 시험조건은 주위온도 $150^{\circ}C$에서 콜렉터-베이스 정격 역전압의 80%를 인가한 상태에서 실시하였으며, 시료수는 57개이고 최종 목표 시험시간은 2,000시간이다. 중간측정을 통해 BJT의 특성열화를 관찰하였으며, 1,500시간 경과 후 1개 시료에서 제품규격을 벗어나는 데이터가 측정되었다. 해당 시료를 분석한 결과 콜렉터-베이스 누설전류 및 전류이득($\beta$)이 증가하였고, 저주파에서의 junction capacitance 가 정상품 대비 크게 관찰되었다. 측정결과를 통해 누설전류 증가 및 이득이 증가한 원인을 추정하였다.

• Journal of the Korean Institute of Telematics and Electronics D
• /
• v.34D no.11
• /
• pp.30-36
• /
• 1997

AlGaAs/GaAs HBTs are developed well enough to be commercialized as an active device in optical transmission system, but there remains the unanswered questions about reliability. In this paper we applied the reverse constant current stress at the high voltage in avalanche region for a long time to find out a new degradation mechanism of junctrion I-V. The unction off-set voltage at which the current vanishes to zero was shifted to the negative direction of applied bias due to the increment of leakage current as the stress time increases. It was identified that the degradation was induced by the hot carriers which were generated at space charge region and trapped at the interface between GaAs base and the passivation nitride enhancing the electric field across the nesa edge.