Journal of the Korean Institute of Telematics and Electronics (대한전자공학회논문지)

The Institute of Electronics and Information Engineers (대한전자공학회)
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A Study on Fabrication of PN Junction Type Si Photodiode

PN 접합형 Photodiode 제작에 관한 연구

  • 조호성 (한국해양대학 전자통신공학과) ;
  • 오종환 (한국해기연구소 기관학과) ;
  • 홍창희 (한국해양대학 전자통신공학과)
  • Published : 1989.11.01
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Abstract

In this research, the PN junction type Si photodiodes have been fabricated on the low doped P type(Na=7x10**14 cm**-3) and N type (Nd=4x10**14cm**-3) (100) silicon substrates. We could find out that the dark current was lower in the N type substrate than in the P type substrate. Some well designed photodiodes showed relatively good optical and electronic characteristics that the dark current is lower than 5 nA at 10V of reverse bias condition, that the breakdown voltage is higher than 250V, and that the quantum efficiency is larger than 86% at the wavelength of $6328{\AA}$

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