Journal of the Korean Institute of Telematics and Electronics (대한전자공학회논문지)
- Volume 26 Issue 11
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- Pages.1658-1665
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- 1989
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- 1016-135X(pISSN)
Design Parameter Analysis for a Planar Type Reactive Ion Etcher
평판형 반응성 이온 식각기의 설계변수 분석
Abstract
Reactor design considerations over several critical parameters for a planar type reactive ion etcher are given. The etch uniformity is taken as a principal design constraint. The characteristics of economicaly available vacuum pumping system are taken as practical design constraints. A set of theoretical conditions on the chamber geometry and on the gas delivery and vacuum system, that satisfy the design constraints, are derived from basic properties of RF glow discharge and gas dynamics. The theoretical results are applied to decide design parameters of a practical single-wafer-per-chamber planar type reactive ion etching machine.
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