• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.10 s.352
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• pp.1-9
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• 2006

In this paper, a couple of 10Gb/s transimpedance amplifiers are realized in a 0.18um standard CMOS technology for optical communication applications. First, the voltage-mode inverter TIA(I-TIA) exploits inverter input configuration to achieve larger effective gm, thus reducing the input impedance and increasing the bandwidth. I-TIA demonstrates $56dB{\Omega}$ transimpedance gain, 14GHz bandwidth for 0.25pF photodiode capacitance, and -16.5dBm optical sensitivity for 0.5A/W responsivity, 9dB extinction ration and $10^{-12}$ BER. However, both its inherent parasitic capacitance and the package parasitics deteriorate the bandwidth significantly, thus mandating very judicious circuit design. Meanwhile, the current-mode RGC TIA incorporates the regulated cascade input configuration, and thus isolates the large input parasitic capacitance from the bandwidth determination more effectively than the voltage-mode TIA. Also, the parasitic components give much less impact on its bandwidth. RGC TIA provides $60dB{\Omega}$ transimpedance gain, 10GHz bandwidth for 0.25pF photodiode capacitance, and -15.7dBm optical sensitivity for 0.5A/W responsivity, 9dB extinction ration and $10^{-12}$ BER. Main drawback is the power dissipation which is 4.5 times larger than the I-TIA.

• The Bulletin of The Korean Astronomical Society
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• v.28 no.2
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• pp.28-28
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• 2003

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2011.06a
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• pp.175-176
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• 2011

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.24 no.11
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• pp.1027-1033
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• 2013

In this work, a D-band imaging detector has been developed in a 65-nm CMOS technology for high frequency imaging application. The circuit was designed based on the resistive self-mixing of MOSFET devices. The fabricated detector exhibits a maximum responsivity of 400 V/W and minimum NEP of 100 $pW/Hz^{1/2}$ at 145 GHz. The chip size is $400{\mu}m{\times}450{\mu}m$ including the probing pads and a balun, while the core of the circuit occupies only $150{\mu}m{\times}100{\mu}m$.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.348-348
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• 2016

Low dark current (off-current) and high photo current are both essential for a solution processed organic photodetector (OPD) to achieve high photo-responsivity. Currently, most OPDs utilize a bulk heterojunction (BHJ) photo-active layer that is prepared by the one-step deposition of a polymer:fullerene blend solution. However, the BHJ structure is the main cause of the high dark current in solution processed OPDs. It is revealed that the detectivity and spectral responsivity of the OPD can be improved by utilizing a photo-active layer consisting of an interdiffused polymer/fullerene bilayer (ID-BL). This ID-BL is prepared by the sequential solution deposition (SqD) of poly(3-hexylthiophene) (P3HT) and [6,6] phenyl C61 butyric acid methyl ester (PCBM) solutions. The ID-BL OPD is found to prevent undesirable electron injection from the hole collecting electrode to the ID-BL photo-active layer resulting in a reduced dark current in the ID-BL OPD. Based on dark current and external quantum efficiency (EQE) analysis, the detectivity of the ID-BL OPD is determined to be $7.60{\times}1011$ Jones at 620 nm. This value is 3.4 times higher than that of BHJ OPDs. Furthermore, compared to BHJ OPDs, the ID-BL OPD exhibited a more consistent spectral response in the range of 400 - 660 nm.

• Journal of the Korean Vacuum Society
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• v.4 no.S1
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• pp.168-173
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• 1995

$GaxIn{1_x}As$ epitaxial layers were grown by a simplified hydrode vapor phase epitaxy(VPE) method bsed on the utilization of Ga/In alloy as the source metal. The effects of a wide range of experimental variables(i.e.,inlet mole fraction of HCI, deposition temperature, Ga/In alloy composition) on the ternary composition and growth rate were investigated. Layers of $Ga_{0.47}In_{0.53}As$ lattice matched to InP were successfully grown from alloys containing 5 to 8 at.% Ga. These layers were used to produce state-of-the art p-i-n photodetectors having the following characteristics: dark current, $I_d$(-5V) = 10-20 nA: responsivity, R=0.84-0.86 A/W; dark current, Id(-5V)=10-20 nA; responsivity, R=0.84-0.86 A/W; capacitance, C=0.88-0.92 pF; breakdown voltage, $V_b$ >40V. This study demonstrated for the first time that a simplified hydride VPE process with a Ga/In alloy source is capable of producing device quality epitaxial layers.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.7 no.3
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• pp.454-460
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• 2003

The modulated frequency dependence on the pyroelectric properties of LiTaO$_3$ single crystal was investigated by the dynamic method. The pyroelectric coefficient of LiTaO$_3$ single crystal was 2.1${\times}$$10^{-8}$/$\textrm{cm}^2$ㆍK. and figure of merits for the responsivity and the detectivity were 1.31${\times}$$10^{-10}$Cㆍcm/J and 1.47${\times}$$10^{-8}$C\ulcornercm/J. respectively. The voltage responsivity corresponded with the pyroelectric voltage exhibited the highest value as about 165V /W at 4Hz and then was in inverse proportion to the frequency over 20Hz. The noise equivalent power and the detectivity at 4Hz were 8.4${\times}$$10^{-9}$ W/Hz$^{1}$2/ and 2.2${\times}$$10^{7}$ cmㆍHz$^{1}$2//W, respectively. Therefore, we could found that LiTaO$_3$ single crystal shows a excellent pyroelectric properties in low frequency region for the human body detection.tection.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.128.2-128.2
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• 2014

Long-wave infrared detectors using the type-II InAs/GaSb strained superlattice (T2SL) material system with the nBn structure were designed and fabricated. The band gap energy of the T2SL material was calculated as a function of the thickness of the InAs and GaSb layers by the Kronig-Penney model. Growth of the barrier material (Al0.2Ga0.8Sb) incorporated Te doping to reduce the dark current. The full width at half maximum (FWHM) of the 1st satellite superlattice peak from the X-ray diffraction was around 45 arc sec. The cutoff wavelength of the fabricated device was ${\sim}10.2{\mu}m$ (0.12eV) at 80 K while under an applied bias of -1.4V. The measured activation energy of the device was ~0.128 eV. The dark current density was shown to be $1.2{\times}10^{-5}A/cm^2$ at 80 K and with a bias -1.4 V. The responsivity was 1.9 A/W at $7.5{\mu}m$ at 80K and with a bias of -1.9V.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.41 no.6
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• pp.652-660
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• 1992

0.10Pb(SbS11/2TSnS11/2T)OS13T-0.25PbTiOS13T-0.65PbZrOS13T ceramics modified by LaS12TOS13T(1[mol%]) and MnOS12T(0-0.30[mol%]) were fabricated. The structural and pyroelectric properties with contents of MnOS12T were studied. Crystal structure of a specimen was rhombohedral type and average grain sizes were decreased with increasing the contents of MnOS12T. Relative dielectric constant and dielectric loss factor were minimum in the specimens doped 0.24[mol%]MnOS12T. (PbS10.99TLaS10.01T)[(SbS11/2TSnS11/2T) TiS10.25TZrS10.65T]OS13T specimen modified 0.24[mol%]MnOS12T showed the good pyroelectric properties and pyroelectric coefficient and voltage responsivity were 6.73x10S0-8T[C/cmS02TK], 125[V/W], respectively. Voltage responsivity was increased with decreasing the chopper frequency.

• Transactions on Electrical and Electronic Materials
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• v.17 no.4
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• pp.227-230
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• 2016

Zn_xMn_3-xO₄ (0.95≤x≤1.20) specimens were prepared using a conventional solid state reaction method. All specimens were sintered in air at 1,200℃ for 12 h, cooled at a rate of 2℃/min to 800℃, and subsequently quenched to room temperature. We investigated the electrical properties of Zn_xMn_3-xO₄ specimens with various amounts of ZnO for use as IR detectors. At a composition of x≥1.15, the ZnO phase precipitates beside the spinel structure. The electrical resistivity at room temperature, activation energy, responsivity, and detectivity of a Zn_1.10Mn_1.90O₄ specimen are 653.2 kΩ-cm, 0.392 eV, 0.016 V/W, and 7.52×10³ cmHz^1/2/W, respectively.