• Geomechanics and Engineering
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• 제19권2호
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• pp.105-114
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• 2019

In this paper, simulation tests were conducted with similar materials to study the distribution of residual voids in longwall goaf. Short-time step loading was used to simulate the obvious deformation period in the later stage of arch breeding. Long-time constant loading was used to simulate the rheological stage of the arch forming. The results show that the irregular caving zone is the key area of old goaf for the subsidence control. The evolution process of the stress arch and fracture arch in stope can be divided into two stages: arch breeding stage and arch forming stage. In the arch breeding stage, broken rocks are initially caved and accumulated in the goaf, followed by the step deformation. Arch forming stage is the rheological deformation period of broken rocks. In addition, under the certain loads, the broken rock mass undergoes single sliding deformation and composite crushing deformation. The void of broken rock mass decreases gradually in short-time step loading stage. Under the water lubrication, a secondary sliding deformation occurs, leading to the acceleration of the broken rock mass deformation. Based on above research, the concept of equivalent height of residual voids was proposed, and whose calculation equations were developed. Finally, the conceptual model was verified by the field measurement data.

• Geomechanics and Engineering
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• 제21권5호
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• pp.423-432
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• 2020

Hydraulic conductivity is one of the engineering properties of soil. This study focusses on the influence of cement content on the hydraulic conductivity of cemented sand, which is investigated based on the results from numerical analysis and laboratory testing. For numerical analysis the cemented samples were scanned using X-ray Computed Tomography (CT) while laboratory testing was carried out using a triaxial setup. Numerical analysis enables us to simulate flow through the sample and provides insight to the microstructure. It quantifies the pore volume, proportion of interconnected voids and pore size distribution in both cemented and uncemented samples, which could be computed only through empirical equations in case of laboratory testing. With reduction in global voids, the interconnecting voids within the samples also reduce with cement content. Gamma cumulative distribution function is used to predict the percentage of voids lesser than a given pore volume. Finally, the results obtained from both numerical analysis and laboratory testing are compared.

• Journal of Electrical Engineering and Technology
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• 제10권5호
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• pp.2089-2098
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• 2015

With the continuous development in insulation of electrical equipment design, the reliability of the system has been enhanced. However, in the manufacturing process and during operation under continues stresses introduce local defects, such as voids between interfaces that can responsible to occurrence of partial discharge (PD), electric field distortion and accumulation of charges. These defects may lead to localize corrosion and material degradation of insulation system, and a serious threat to the equipment. A model of three layers of PI film with air gap is presented to understand the influence of interface and voids on exploitation conditions such as strong electrical field, PD activity and charge movement. The analytical analysis, and experimental results are good agreement and show that the lose contact between interfaces accumulate more residual charges and in consequences increase the electric field intensity and accelerates internal discharges. These residual charges are trapped charges, injected by the electrodes has often same polarity, so the electric field in cavities increases significantly and thus partial discharge inception voltage (PDIV) decreases. Contrary, number of PD discharge quantity increases due to interface. Interfacial polarization effect has opposite impact on electric field and PDIV as compare to void.

• 한국진공학회지
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• 제9권2호
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• pp.162-166
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• 2000

플라즈마 화학증착법(Plasma Enhanced Chemical Vapor Deposition, PECVD)을 이용하여 양질의 $Si_3N_4$ 금속-유전막-금속(Metal-Insulator-Metal, MIM) 커패시터를 구현하였다. 유전체인 $Si_3N_4$와 전극인 Al의 계면반응을 억제시키기 위해 티타늄 나이트라이드(TiN)를 확산 장벽으로 사용한 결과 MIM 커패시터의 전극과 유전체 사이의 계면에서는 어떠한 hillock이나 석출물도 관찰되지 않았다. 커패시턴스와 전류전압 특성분석으로부터 양질의 MIM 커패시터 특성을 보이는 $Si_3N_4$의 최소 두께는 500 $\AA$이며, 그 두께 미만에서는 대부분의 커패시터가 전기적으로 단락되어 웨이퍼 수율이 낮아진다는 사실을 알 수 있었다. 투과전자현미경(transmission Electron Microscope, TEM)을 이용한 단면 미세구조 관찰을 통해 $Si_3N_4$층의 두께가 500 $\AA$ 미만인 커패시터의 경우에 TiN과 $Si_3N_4$의 계면에서 형성되는 슬릿형 공동(slit-like void)01 의해 커패시터의 유전특성이 파괴된다는 사실을 알게 되었으며, 열 유기 잔류 응력(thermally-induced residual stress) 계산에 기초하여 공동의 형성 기구를 규명하였다.

• 산업기술연구
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• 제35권
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• pp.3-8
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• 2015

A study has been made on defects which are formed in manufacturing processes of engine bearing and also on fatigue crack growth behavior in each step of bearing metal manufacturing. After the first step(sinter brass powder on steel plate ; Series A) many voids are made on brass surface and its size is decreased by the second step(rolling process of sintered plate ; Series B). After the third step(re-sintering step of brass powder and rolling ; Series C) the number of voids is decreased and its type shows line. The time of fatigue crack initiation and the growth rate of fatigue crack are in order of Series A, Series B, Series C. These reasons are that void fosters the crack initiation and growth, and residual stress made by rolling process effects on the crack growth rate in Series B, C. In forming and machining processes by use of final bearing metal, crack was observed at internal corner of flange and peeling off was observed at junction between steel and brass. Owing to the above crack and peeling off, it is considered that there is a possibility of fatigue fracture during the application time.

• 산업기술연구
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• 제31권A호
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• pp.45-51
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• 2011

A study has been made on defects which are formed in manufacturing processes of engine bearing and also on fatigue crack growth behavior in each step of bearing metal manufacturing. After the first step (sinter brass powder on steel plate ; Series A) many voids are made on brass surface and its size is decreased at the second step (rolling process of sintered plate ; Series B). After the third step (re-sintering step of brass powder and rolling ; Series C) the number of voids is decreased and its type shows line. The time of fatigue crack initiation and the growth rate of fatigue crack are in order of Series A, Series B, Series C. These reasons are that void fosters the crack initiation and growth, and residual stress made by rolling process affects on the crack growth rate in Series B, C. In forming and machining processes by use of final bearing metal, crack was observed at internal corner of flange and peeling off was observed at interface between steel and brass. Owing to the above crack and peeling off, it is considered that there is a possibility of fatigue fracture during the application time.

• Composites Research
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• 제17권3호
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• pp.1-7
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• 2004

최근 대형 복합재료 구조물 성형에 적합한 공정으로 주목받는 vacuum assisted RTM (VARTM) 공정에 있어, 보강섬유의 조직 내부에 잔류하는 공기를 제거하여 기공함유율을 낮추는 기술의 중요성이 인식되고 있다. 거대기공 혹은 불완전 함침영역은 부적절한 주입구 및 공기배출구의 위치, 혹은 금형의 형상에 의해 발생한다. 미세기공은 불균일한 수지 유동선단의 속도로 인해 유동선단 부분에서 집중적으로 형성되며, 금형충전 공정 도중 수지와 함께 이동한다. 성형이 완료된 제품내의 잔류 기공들은 완성품의 물리적 성질을 저하 및 제품의 파손을 초래할 수 있다. 본 연구에서는 VARTM 공정에서의 기공의 형성 및 이동을 해석할 수 있는 통합된 거시적/미시적 해석 방법을 개발하였다. 수치해석 프로그램을 개발하여 VARTM 공정에서의 3차원 수지 유동을 해석하였으며, 그에 따른 거대기공 및 미세기공의 분포를 예측하였다.

• Tribology and Lubricants
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• 제13권1호
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• pp.42-52
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• 1997

This paper deals with wear characteristics of ion-nitrided metal theoretically and experimentally in order to analysis of wear phenomena. Wear tests show that compound layer of ion-nitrided metal reduces wear rate when the applied wear load is mall. However, as th load becomes large, the existence of compound layer tends to increase wear rate. The residual stress at the surface of ion-nitrided metal is measured, and the internal stress distribution is calculated when the normal and tangential forces are applied to the surface of metal. Compressive residual stress is largeest at the compound layer, and decreases as the depth from the surface increases. Calculation shows that the maximum stress exists at a certain depth from the surface when normal and tangential force are applied, and that the larger the wear load is the deeper the location of maximum stress becomes. In the analysis, it is found that under small applied wear load the critical depth, where voids and cracks may be created and propagated, is located at the compound layer, as the adhesive wear, where hardness is an important factor, is created the existence of compound layer reduces the amount of wear. When the load becomes large the critical depth is located below the compound layer, and delamination, which may be explained by surface deformation, crack nucleation and propagation, is created, and the existence of compound layer increases wear rate.

• 한국전기전자재료학회논문지
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• 제23권2호
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• pp.98-102
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• 2010

This paper describes that single crystalline 3C-SiC (cubic silicon carbide) thin films have been deposited on carbonized Si(100) substrates using hexamethyldisilane (HMDS, $Si_2(CH_3){_6}$) as a safe organosilane single precursor and a nonflammable mixture of Ar and $H_2$ gas as the carrier gas by APCVD at $1280^{\circ}C$. The deposition was performed under various conditions to determine the optimized growth condition. The crystallinity of the 3C-SiC thin film was analyzed by XRD (X-ray diffraction). The surface morphology was also observed by AFM (atomic force microscopy) and voids between SiC and Si interfaces were measured by SEM (scanning electron microscopy). Finally, residual strain and hall mobility was investigated by surface profiler and hall measurement, respectively. From these results, the single crystalline 3C-SiC film had a good crystal quality without defects due to viods, a low residual stress, a very low roughness.

• 센서학회지
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• 제22권3호
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• pp.175-180
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• 2013

This paper describes the characteristics of cubic silicon carbide (3C-SiC) films grown on a carbonized Si(100) substrate, using hexamethyldisilane (HMDS, $Si_2(CH_3)_6$) as a safe organosilane single precursor in a nonflammable $H_2$/Ar ($H_2$ in Ar) mixture carrier gas by atmospheric pressure chemical vapor deposition (APCVD) at $1280^{\circ}C$. The growth process was performed under various conditions to determine the optimized growth and carbonization condition. Under the optimized condition, grown film has a single crystalline 3C-SiC with well crystallinity, small voids, low residual stress, low carrier concentration, and low RMS. Therefore, the 3C-SiC film on the carbonized Si (100) substrate is suitable to power device and MEMS fields.