• Korean Journal of Materials Research
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• v.17 no.5
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• pp.263-267
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• 2007

Hafnium oxide $(HfO_2)$ films were deposited on Si(100) substrates by remote plasma-enhanced atomic layer deposition (PEALD) method at $250^{\circ}C$ using TEMAH [tetrakis(ethylmethylamino)hafnium] and $O_2$ plasma. $(HfO_2)$ films showed a relatively low carbon contamination of about 3 at %. As-deposited and annealed $(HfO_2)$ films showed amorphous and randomly oriented polycrystalline structure. respectively. The interfacial layer of $(HfO_2)$ films deposited using remote PEALD was Hf silicate and its thickness increased with increasing annealing temperature. The hysteresis of $(HfO_2)$ films became lower and the flat band voltages shifted towards the positive direction after annealing. Post-annealing process significantly changed the physical, chemical, and electrical properties of $(HfO_2)$ films. $(HfO_2)$ films deposited by remote PEALD using TEMAH and $O_2$ plasma showed generally improved film qualities compare to those of the films deposited by conventional ALD.

• Korean Journal of Materials Research
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• v.15 no.9
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• pp.594-597
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• 2005

The barrier characteristics of ZrN films deposited by remote plasma enhanced atomic layer deposition(PEALD) using TDEAZ and $N_2$ remote plasma have been investigated under various deposition conditions such as temperatures, plasma power and processing pressures. ZrN films showed generally improved properties as the processing temperature, pressure and plasma power increased. The optimized processing temperature, plasma power and pressure were $300^{\circ}C$, 200 Watt and 1 torr. respectively ZrN films deposited at the optimized processing conditions showed the carbon contents and resistivity of $6at.\%$ and $400{\mu}{\Omega}cm$ respectively.

• Journal of the Semiconductor & Display Technology
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• v.18 no.2
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• pp.98-102
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• 2019

Direct plasma-enhanced atomic layer deposition (PEALD) are widely used for $SiO_2$ and SiON thin film process in current semiconductor industry. However, this exhibits poor step coverage for three-dimensional device structure due directionality of plasma species as well as plasma damage on the substrate. In this study, to overcome this issue, low temperature (< $300^{\circ}C$) $SiO_2$ and SiON thin film processes were studied using inductively coupled plasma (ICP) type remote PEALD with various reactant gases such as $O_2$, $H_2O$, $N_2$ and $NH_3$. It was confirmed that the interfacial properties such as fixed charge density and charge trapping behavior of thin films were considerably improved by hydrogen species in $H_2O$ and $NH_3$ plasma compared to the films grown with $O_2$ and $N_2$ plasma. Furthermore, the leakage current density of the thin films was suppressed for same reason.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2008.11a
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• pp.2-2
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• 2008

원격 초고주파 플라즈마를 이용한 원자층 박막증착 장치를 이용한 ZnO 나노박막의 전기적 광학적 특성에 미치는 공정변수의 영향을 조사하였다. 실험결과 Al 이온주입이 증가할수록 ZnO의 금지대역이 증가하여 광투과도가 향상되었으며, 5%에서 94%의 기시광 영역 투과도를 얻을 수 있었다. 기판온도가 증가함에 따라 결정성장이 향상되었으며, 원격 플라즈마 파워가 증가함에 따라 박막의 표면조도와 밀도가 증가하였다. 플라즈마를 사용한 경우, $100^{\circ}C$의 낮은 온도에서도 우수한 저항, 이동도 특성을 얻을 수 있었다.