• Title/Summary/Keyword: relaxation current

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Electrical Properties of Pt/SCT/Pt Thin Film Structure (Pt/SCT/Pt 박막 구조의 전기적인 특성)

  • Kim, Jin-Sa;Shin, Cheol-Gi
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.56 no.10
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    • pp.1786-1790
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    • 2007
  • The $(SrCa)TiO_3(SCT)$ thin films are deposited on Pt-coated electrode ($Pt/TiN/SiO_2/Si$) using RF sputtering method at various deposition temperature. The dielectric constant of SCT thin films were increased with the increase of deposition temperature, and changed almost linearly in temperature ranges of $-80{\sim}+90[^{\circ}C]$. Also, SCT thin films was observed the phenomena of dielectric relaxation with the increase of frequency, and the relaxation frequency was observed above 200[kHz]. V-I characteristics of SCT thin films show the increasing leakage current with the increases of deposition temperature. The conduction mechanism of the SCT thin films observed in the temperature range of $25{\sim}100[^{\circ}C]$ can be divided into three characteristic regions with different mechanism by the increasing current. The region 1 below 0.8[MV/cm] shows the ohmic conduction. The region 2 can be explained by the Child's law, and the region 3 is dominated by the tunneling effect.

A Study on the Energy Distribution of Interface Traps in MOS Devices Under Non-steady-state (비정상상태에 있는 MOS내의 경사면트랩에너지 분포에 관한 연구)

  • Cho, Chul;Kim, Jae-Hoon
    • 전기의세계
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    • v.26 no.6
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    • pp.86-92
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    • 1977
  • The phenomenon of non-steady-state current flow through the interface traps during the dielectric relaxation of MOS device is presented. Experimental method is also described for determining the energy distribution of interface traps, which is based on isothermal dielectric relaxation current technique. Actually, the energy distribution of interface traps was obtained by measuring the transient current through the traps at Si-SiO$_{2}$ interface only in lower-half of the bandgap. It is shown that the trap energy distributio has peak value 1.72*10$^{13}$ cm$^{-2}$ eV$^{-1}$ near 0.73eV approximately.

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Displacement Current Characteristics of DMPC Lipid Monolayer (DMPC 인지질 단분자막의 변위전류 특성)

  • Choi, Yong-Sung;Sang, Jin-Won;Lee, Kyung-Sup
    • Proceedings of the KIEE Conference
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    • 2006.10a
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    • pp.12-13
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    • 2006
  • The physical properties of DMPC monolayer were made for dielectric relaxation phenomena by the detection of the surface pressures and displacements current. The current was measured after the electric bias across the manufactured MIM device. It is found that the phospolipid monolayer of dielectric relaxation takes a little time and depend on the molecular area. When electric bias is applied across the manufactured MIM device by the deposition condition of phospolipid mono-layer, it wasn't breakdown when the higher electric field to impress by increase of deposition layers.

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Evolution of the Magnetosphere in Response to a Sudden Ring Current Injection

  • Choe, G.S.;Park, Geun-Seok;Lee, Jung-Gi
    • The Bulletin of The Korean Astronomical Society
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    • v.36 no.2
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    • pp.100.2-100.2
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    • 2011
  • The dynamical evolution of the Earth's magnetosphere loaded with a transiently enhanced ring current is studied by numerical magnetohydrodynamic (MHD) simulation. Two cases with different values of the primitive ring current are considered. In one case, the initial ring current is strong enough to create a magnetic island in the magnetosphere. The magnetic island readily reconnects with the earth-connected ambient field and is destroyed as the system approaches a steady equilibrium. In the other case, the initial ring current is not so strong, and the initial magnetic field configuration bears no magnetic island, but a wake of bent field lines, which is smoothed out through the relaxing evolution of the magnetosphere. The relaxation time of the magnetosphere is found to be about five to six minutes, over which the ring current is reduced to about a quarter of its initial value. Before reaching a steady state, the magnetosphere is found to undergo an overshooting expansion and a subsequent contraction. Fast and slow magnetosonic waves are identified to play an important role in the relaxation toward equilibrium.

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Biofeedback Treatment for Tension-Type Headache and Migraine (긴장성두통과 편두통의 바이오피드백 치료)

  • Park, Joo-Eon;Lee, Kye-Seong;Shin, Sang-Eun
    • Korean Journal of Psychosomatic Medicine
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    • v.14 no.1
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    • pp.25-32
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    • 2006
  • Objectives : Headache is a clinical symptom that more than 90% of all individuals experience during their life time. This article provides a current concept of tension-type and migraine headaches and summarizes the effects of biofeedback treatment and/or relaxation techniques. Methods : The following terms were used for Pubmed/Medline search : biofeedback, relaxation, physiological, behavioral, nonpharmacological, headache, tension-type headache, and migraine. A review of references from relevant literature was also conducted to collect reports not identified in the Pubmed/Medline search. Interviews with experts on biofeedback were also included in this review. Results : Headache is a psychophysiological symptom that can be treated by some behavioral interventions including biofeedback and relaxation. Literatures on biofeedback and/or relaxation have consistently reported significant therapeutic effects on headaches. Important factors that we have to consider, when we apply to headache patients with biofeedback and relaxation techniques, were also presented. Conclusion : The available evidence suggests that biofeedback and relaxation techniques are effective treatments for the patients with headaches and can be provided to the patients as monotherapy or combination therapy with medication.

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Characterization of Dielectric Relaxation and Reliability of High-k MIM Capacitor Under Constant Voltage Stress

  • Kwak, Ho-Young;Kwon, Sung-Kyu;Kwon, Hyuk-Min;Sung, Seung-Yong;Lim, Su;Kim, Choul-Young;Lee, Ga-Won;Lee, Hi-Deok
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.14 no.5
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    • pp.543-548
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    • 2014
  • In this paper, the dielectric relaxation and reliability of high capacitance density metal-insulator-metal (MIM) capacitors using $Al_2O_3-HfO_2-Al_2O_3$ and $SiO_2-HfO_2-SiO_2$ sandwiched structure under constant voltage stress (CVS) are characterized. These results indicate that although the multilayer MIM capacitor provides high capacitance density and low dissipation factor at room temperature, it induces greater dielectric relaxation level (in ppm). It is also shown that dielectric relaxation increases and leakage current decreases as functions of stress time under CVS, because of the charge trapping effect in the high-k dielectric.

A Low-voltage High-speed PWM signal generation Based on Relaxation oscillator

  • Siripruchyanun, Montree
    • Proceedings of the IEEK Conference
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    • 2002.07b
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    • pp.735-738
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    • 2002
  • This paper a new simple PWM (Pulse Width Modulation) signal generation based on modified relaxation oscillator is introduced. Its advantages of the proposed principle are that the precise PWM signal can be easily achieved with a high frequency range up to several megahertz and a low-voltage power supply. The proposed circuit can accept either voltage or current modulating signal. It is very suitable for developing into Integrated Circuits (ICs) form in communication applications. The simulation and experimental results are also depicted, they shown good agreement with theoretical anticipation.

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FDTD Simulation of Photonic-Crystal Lasers and Their Relaxation Oscillation

  • Song, G. Hugh;Kim, Soan;Hwang, Kyung-Hwan
    • Journal of the Optical Society of Korea
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    • v.6 no.3
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    • pp.87-95
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    • 2002
  • We have developed an finite-difference time-domain program that can analyze photonic devices with gain and/or dispersion. As an example, a two-dimensional photonic-crystal laser is simulated. The simulation can show the relaxation oscillation behavior at extremely high current injection.

Thermally Stimulated Current Analysis of (Ba, Sr)TiO$_3$ Capacitor ((Ba, Sr)TiO$_3$ 커패시터의 Thermally Stimulated Current분석)

  • Kim, Yong-Ju;Cha, Seon-Yong;Lee, Hui-Cheol;Lee, Gi-Seon;Seo, Gwang-Seok
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.38 no.5
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    • pp.329-337
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    • 2001
  • It has been known that the leakage current in the low field region consists of the dielectric relaxation current and intrinsic leakage current, which cause the charge loss in dynamic random access memory (DRAM) storage capacitor using (Ba,Sr)TiO$_{3}$ (BST) thin film. Especially, the dielectric relaxation current should be seriously considered since its magnitude is much larger than that of the intrinsic leakage current in giga-bit DRAM operation voltage (~IY). In this study, thermally stimulated current (TSC) measurement was at first applied to investigate the activation energy of traps and relative evaluation of the density of traps according to process change. And, through comparing TSC to early methods of I-V or I-t measurement and analyzing, we identify the origin of the dielectric relaxation current and investigate the reliability of TSC measurement. First, the polarization condition such as electric field, time, temperature and heating rate was investigated for reliable TSC measurement. From the TSC measurement, the energy level of traps in the BST thin film has been investigated and evaluated to be 0.20($\pm$0.01) eV and 0.45($\pm$0.02) eV. Based on the TSC measurement results before and after rapid thermal annealing (RTA) process, oxygen vacancy is concluded to be the origin of the traps. TSC characteristics with thermal annealing in the MIM BST capacitor have shown the same trends with the current-voltage (I-V) and current-time (I-t) characteristics. This means that the TSC measurement is one of the effective methods to characterize the traps in the BST thin film.

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Pulsed field magnetization of multi-turn short-circuited stabilized double pancake HTS coil

  • Korotkov, V.S.;Krasnoperov, E.P.;Brazhnik, P.A.;Kartamyshev, A.A.;Bishaev, A.M.;Kozinsteva, M.V.
    • Progress in Superconductivity and Cryogenics
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    • v.21 no.1
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    • pp.1-5
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    • 2019
  • The pulsed field magnetization of the short-circuited soldered double pancake coil made of stabilized commercial high-Tc superconductor (HTS) tape is experimentally studied. The evolution of the shielding current induced by the pulsed field and the trapped field after the pulsed magnetization was measured at 77 K. It is shown that the trapped field in the coil is close to the value reached in the field cooling process and reduces weakly at 5-fold increasing of pulsed field amplitude. The current relaxation at t~2 ms after the pulse is defined by the current sharing between the tape's copper coating and the $YBa_2Cu_3O_{7-d}$ layer. In the intermediate time scale (1 s < t < 100 s) the flux creep in HTS layer dominates. At t > 100 s the current's relaxation is defined by the resistance of soldered joint between tapes.