• Journal of Advanced Marine Engineering and Technology
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• v.34 no.6
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• pp.864-870
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• 2010

Air embolism can be a lethal complication of surgical procedures during which venous pressure at the site of surgery is sub-atmospheric or air is forced under pressure into a body cavity. To solve the problem, we developed the air detector using relative dielectric constant change, which is expected to be used broadly in industrial circles. We designed air detection system with air control equipment, detection circuit and LabVIEW system for air sensing. In experiments with a mock system, the proposed system showed a signal difference depending on the amount of air in the Tygon tube of the mock system.

• Journal of Korean Society of Disaster and Security
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• v.10 no.1
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• pp.61-66
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• 2017

It is very important to understand the electromagnetic characteristics of underground media in GPR (Ground Penetrating Radar) survey. Depending on the electrical characteristics of the underground medium, the energy of the electromagnetic wave becomes relatively small, and reflection from the interface may become difficult. In this study, electrical characteristics of sandy soils under various (loose and dense) conditions were analyzed. As a result, In dry sand is the dielectric constant increased as the relative density increased, and the dielectric constant and electrical conductivity increased as the moisture content of the sand increased.

• Journal of the Korean Ceramic Society
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• v.29 no.10
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• pp.827-835
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• 1992

The effects of CeO2 on the properties of cordierite-based glass-ceramics and its applicability to low firing temperature substrate were examined. Glass-ceramics were prepared by sintering the glass powder compacts at 900~100$0^{\circ}C$ for 3 h. Density, bending strength, dielectric constant and thermal expansion coefficient of the glass-ceramics were measured as functions of CeO2 contents and sintering temperatures. By adding CeO2, dense glass-ceramics were obtained below 100$0^{\circ}C$. dielectric constant and bending strength were more dependent on the porosity of glass-ceramics containing 5 wt% CeO2, sintered at 100$0^{\circ}C$ for 3 h, were as follows; relative density is 95.3%, bending strength is 178$\pm$11 MPa, dielectric constant is 4.98$\pm$0.20 (at 1 MHz) and thermal expansion coefficient is 33.7$\times$10-7/$^{\circ}C$. Therefore, the glass-ceramics containing 5 wt% CeO2 appeared to be suitable for low firing temperature substrate of electronic devices.

• Journal of Ceramic Processing Research
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• v.20 no.4
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• pp.395-400
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• 2019

This study was conducted on the structural and electrical properties of (Ba0.7Sr0.3)TiO3 thin films prepared by the sol-gel and spin-coating methods in order to investigate their applicability to electrocaloric devices. All specimens showed a tetragonal crystal structure and lattice constants of a = 3.972 Å, c = 3.970 Å. The mean grain size of specimens sintered at 800 ℃ was about 30 nm, and the average thickness of 5 times coated specimens was 304~311 nm. In the specimen sintered at 750 ℃, The relative dielectric constant and loss of specimens measured at 20 ℃ were 230 and 0.130, respectively, while dependence of the dielectric constant on unit DC voltage was -8.163 %/V. The remanent polarization and coercive fields were 95.5 μC/㎠ and 161.3 kV/cm at 21 ℃, respectively. And, the highest electrocaloric property of 2.69 ℃ was observed when the electric field of 330 kV/cm was applied.

• Proceedings of the KIEE Conference
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• 2004.07c
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• pp.1618-1620
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• 2004

The $Pb(Zr_{0.4}Ti_{0.6})O_3/Pb(Zr_{0.6}Ti_{0.4})O_3$ [PZT(4060)/(6040)] multilayered thin films were deposited by RF Sputtering method on the Pt/Ti/$SiO_2$/Si substrate. This procedure was repeated several times to form PZT(4060)/(6040) heterolayerd thin films. The effects on the structural and dielectric properties of PZT multilayered thin films were investigated. The MFM(Metal Ferroelectric Metal) type capacitors were made using the PZT(4060)/(6040) multilayered thin films deposited with optimum deposition condition. An enhanced dielectric property was observed in the PZT(4060)/(6040) multilayered thin films. The relative dielectric constant and dielectric loss at 100Hz of the PZT(4060)/(6040)-5 multilayered thin films were about 1106 and 0.016, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.6
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• pp.550-553
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• 2005

[ $Pb(Zr_{0.2}Ti_{0.8})O_3$ ] powders, prepared by the sol-gel method, were mixed with an organic vehicle and the PZT thick films were fabricated by the screen-printing techniques on Pt/alumina substrates. The structural and dielectric properties were examined as a function of sintering temperature. The particle size distribution of the powder is bimodal with the mean particle size of about $1.2\;{\mu}m$. The average grain size of the PZT thick films sintered above $1000^{\circ}C$ was about $3.1\;{\mu}m$ and the thickness of the specimens was approximately $41\;{\mu}m$. The relative dielectric constant and dielectric loss of the thick films sintered at $1050^{\circ}C$ were 337 and $1.24\%$, respectively.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.33 no.2
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• pp.83-87
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• 1984

Influence of the metallization during the manufacturing of the ceramic multilayer capacitor on the dielectric properties was studied as a change of the capacity and the dissipation factor. Due to the change of the relative dielectric constant as a function of the measuring temperature the influence of the metallization could be obtained and the change of the dissipation factor as a function of the measuring frequency was anaysed. In order to investigate the boundary effect between the metallization and the dielectric a kind of microstructure model at the internal Grain and Grain Boundary was constructed and tried to analyse the change of the dielectric properties.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.3
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• pp.503-507
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• 1998

Sintering behavior and dielectric peroperties of $xCaTiO_3-La(Zn_{1/2}Ti_{1/2})O_3$ system were investigated for better understanding of the microwave dielectric materials. In $xCaTiO_3-(1-x)La(Zn_{1/2}Ti_{1/2})O_3$ systems, solid solution type was focused as a function of composition(x=0.4-0.6) and sintered density. With increasing the sintered density, the relative dielectric constant was decreased and Q value was increased and then saturated. In solid solution type, dielectric constant was increased with increasing $CaTiO_3$ content. In $0.5\;CaTiO_3-0.5\; La(Zn_{1/2}Ti_{1/2})O_3$ case, dielectric constant(=48) and temperature coefficient of resonace frequency$(=-1 ppm/^{\circ}C$) were obtained.

• Journal of the Korean Ceramic Society
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• v.30 no.8
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• pp.657-663
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• 1993

BaTiO3 sputtering targets of 3 inch diameter were prepared by sintering the CIP (Cold Isotatic Pressing) compacts at 136$0^{\circ}C$ for 3hrs. The apparent density and grain size were 97% and 30${\mu}{\textrm}{m}$, respectively. After BaTiO3 films were deposited on Si and Pt/Ti/SiO2/Si substrates using these targets, films were annealed at various conditions and the crystallization behavior, reaction with the substrate and the electrical properties were investigated. The films on both substrates required 5~20hrs furnace annealing for crystallization at the temperatures from $600^{\circ}C$ to 80$0^{\circ}C$. For the films on Si substrate, interaction between the film and the substrate was suppressed upt o $700^{\circ}C$ for 10 hrs and the relative dielectric constant was 30. As the annelaing temperature and time were increased, the relative dielectric constants of the films decreased due to the formation of silicate phases through the reaction with the substrate. For the BaTiO3 films on Pt/Ti/SiO2/Si substrate, the reaction with the substrate was further reduced when the annealing condition was identical to that for Si substrate, but the reaction between the layers in Pt electrode took place above $700^{\circ}C$. When the films were annealed at $600^{\circ}C$ where the stability of Pt electrode was sustained, relative dielectric constant was increased to 110 since the reaction with substrate was effectively reduced even for a longer annealing time and the crystallization was enhanced.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.7
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• pp.419-423
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• 2015

Sintering, microstructure, thermal conductivity and microwave dielectric properties of xLiF-(1-x)MgO ceramics (x=0.03~0.10 mol) were investigated. The high density was obtained in the specimens of $x{\geq}0.06$, i.e., 0.04 LiF-0.96 MgO in mol, whereas the amount of 0.03 mol LiF was insufficient to densify. From the result that the contact flattening in the sintered specimen was observed, the densification occurred through the liquid-phase sintering. The specimen of x=0.06 showed the highest room-temperature thermal conductivity. Relative density, thermal conductivity, dielectric constant, and quality factor ($Q{\times}f$) of the specimen for x=0.06 sintered at $900^{\circ}C$ for 4 h were 97.8%, $39.2Wm^{-1}K^{-1}$, 9.45, and 14,671 GHz, respectively.