• Journal of the Korean earth science society
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• v.40 no.4
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• pp.392-405
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• 2019

Biogeochemical processes play an important role in ocean environments and can affect the entire Earth's climate system. Using an ocean-biogeochemistry model (NEMO-TOPAZ), we investigated the effects of changes in albedo and wind stress caused by phytoplankton in the equatorial Pacific. The simulated ocean temperature showed a slight decrease when the solar reflectance of the regions where phytoplankton were present increased. Phytoplankton also decreased the El $Ni{\tilde{n}}o$-Southern Oscillation (ENSO) amplitude by decreasing the influence of trade winds due to their biological enhancement of upper-ocean turbulent viscosity. Consequently, the cold sea surface temperature bias in the equatorial Pacific and overestimation of the ENSO amplitude were slightly reduced in our model simulations. Further sensitivity tests suggested the necessity of improving the phytoplankton-related equation and optimal coefficients. Our results highlight the effects of altered albedo and wind stress due to phytoplankton on the climate system.

• Journal of Sensor Science and Technology
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• v.30 no.4
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• pp.223-228
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• 2021

This work presents a low-power CMOS image sensor (CIS) with a multi-column-parallel (MCP) readout structure while focusing on improving its performance compared to previous works. A delta readout scheme that utilizes the image characteristics is optimized for the MCP readout structure. By simply alternating the MCP readout direction for each row selection, additional memory for the row-to-row delta readout is not required, resulting in a reduced area of occupation compared to the previous work. In addition, the bias current of a pre-amplifier in a successive approximate register (SAR) analog-to-digital converter (ADC) changes according to the operating period to improve the power efficiency. The prototype CIS chip was fabricated using a 0.18-㎛ CMOS process. A 160 × 120 pixel array with 4.4 ㎛ pitch was implemented with a 10-bit SAR ADC. The prototype CIS demonstrated a frame rate of 120 fps with a total power consumption of 1.92 mW.

• Current Optics and Photonics
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• v.7 no.5
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• pp.574-581
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• 2023

A scheme is proposed to generate triangular waveforms with alterable symmetry. The key component is a cascaded single-drive Mach-Zehnder modulator (SD-MZM) and optical polarization beam splitter-combiner architecture. In this triangular waveform generator, the bias-induced phase shift, modulation index and controllable delay difference are changeable. To generate triangular waveform signals with different symmetry indexes, different combinations of these variables are selected. Compared with the previous schemes, this generator just contains one SD-MZM and the balanced photodetector (BPD) is not needed, which means the costs and energy consumption are significantly reduced. The operation principle of this triangular waveform generator has been theoretically analyzed, and the corresponding simulation is conducted. Based on the theoretical and simulated results, some experiments are demonstrated to prove the validity of the scheme. The triangular waveform signals with a symmetry factor range of 20-80% are generated. Both experiment and theory prove the feasibility of this method.

• The Korean journal of internal medicine
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• v.39 no.1
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• pp.160-171
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• 2024

Background/Aims: The effectiveness of remdesivir treatment in reducing mortality and the requirement for mechanical ventilation (MV) remains uncertain, as randomized controlled trials (RCTs) have produced conflicting results. Methods: We searched MEDLINE, EMBASE, Cochrane Central Register of Controlled Trials, and other data resources to find RCTs published prior to April 10, 2023. The selection of studies, assessment of risk of bias, and meta-analysis were conducted according to PRISMA guidelines. The primary outcomes were all-cause mortality and the need to initiate MV. Results: A total of 5,068 articles were screened, from eight RCTs comprising 11,945 patients. The meta-analysis found that, compared to standard care or placebo, remdesivir treatment provided no significant all-cause mortality benefit (pooled risk ratio [RR], 0.93; 95% confidence interval [CI], 0.85-1.02; 8 studies; high certainty evidence), while subgroup analyses revealed a trend towards reduced mortality among patients requiring oxygen but not MV (pooled RR, 0.88; 95% CI, 0.77-1.00; 6 studies; I² = 4%). The need to initiate MV (pooled RR, 0.74; 95% CI, 0.59-0.94; 7 studies; moderate certainty evidence) in remdesivir-treated patients was also reduced compared to controls. Remdesivir significantly increased clinical improvement and discharge and significantly reduced serious adverse events. Conclusions: In this systematic review and meta-analysis of RCTs, it was found that remdesivir treatment did not show a substantial decrease in the risk of mortality. However, it was linked to a reduction in the necessity for additional ventilator support, suggesting remdesivir could be beneficial for COVID-19 patients, particularly those who are not on MV.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.5
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• pp.291-294
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• 2015

Recently, ZnO based oxide TFTs used in the flexible and transparent display devices are widely studied. To apply to OLED display switching devices, electrical performance and stability are important issues. In this study, to improve these electrical properties, we fabricated TFTs having Al doped Zinc Oxide (AZO) layer inserted between the gate insulator and ZnO layer. The AZO and ZnO layers are deposited by Atomic layer deposition (ALD) method. I-V transfer characteristics and stability of the suggested devices are investigated under the positive gate bias condition while the channel defects are also analyzed by the photoluminescence spectrum. The TFTs with AZO layer show lower threshold voltage ($V_{th}$) and superior sub-threshold slop. In the case of $V_{th}$ shift after positive gate bias stress, the stability is also better than that of ZnO channel TFTs. This improvement is thought to be caused by the reduced defect density in AZO/ZnO stack devices, which can be confirmed by the photoluminescence spectrum analysis results where the defect related deep level emission of AZO is lower than that of ZnO layer.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.2
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• pp.198-203
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• 2016

We investigate the effects of magnesium (Mg) suppressor layer on the electrical performances and stabilities of amorphous indium-zinc-tin-oxide (a-ITZO) thin-film transistors (TFTs). Compared to the ITZO TFT without a Mg suppressor layer, the ITZO:Mg TFT exhibits slightly smaller field-effect mobility and much reduced subthreshold slope. The ITZO:Mg TFT shows improved electrical stabilities compared to the ITZO TFT under both positive-bias and negative-bias-illumination stresses. From the X-ray photoelectron spectroscopy O1s spectra with fitted curves for ITZO and ITZO:Mg films, we observe that Mg doping contributes to an enhancement of the oxygen bond without oxygen vacancy and a reduction of the oxygen bonds with oxygen vacancies. This result shows that the Mg can be an effective suppressor in a-ITZO TFTs.

• Journal of the Institute of Electronics and Information Engineers
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• v.54 no.1
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• pp.33-38
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• 2017

In this paper, a 4-channel common-cathode VCSEL diode driver array with 3.125 Gb/s per channel operation speed is realized. In order to achieve faster speed of the switching main driver with relatively large transistors, the transmitter array chip consists of a pre-amplifier with active inductor stage and also an input buffer with modified equalizer, which leads to bandwidth extension and reduced current consumption. The utilized VCSEL diode provides inherently 2.2 V forward bias voltage, $50{\Omega}$ resistance, and 850 fF capacitance. In addition, the main driver based upon current steering technique is designed, so that two individual current sources can provide bias currents of 3.0 mA and modulation currents of 3.3 mA to VCSEL diodes. The proposed 4-channel VCSEL driver array has been implemented by using a $0.11-{\mu}m$ CMOS technology, and the chip core occupies the area of $0.15{\times}0.18{\mu}m^2$ and dissipates 22.3 mW per channel.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.88-88
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• 2003

Optical Emission Spectroscopy(OES) is a very important technology for real-time monitoring of plasma in a reactor during dry etching process. OES technology is non-invasive to the plasma process. It can be used to collect information on excitation and recombination between electrons and ions in the plasma. It also helps easily diagnose plasma intensity and monitor end-point during plasma etch processing. We studied high density planar inductively coupled BCl$_3$ and BCl$_3$/Ar plasma with an OES as a function of processing pressure, RIE chuck power, ICP source power and gas composition. The scan range of wavelength used was from 400 nm to 1000 nm. It was found that OES peak Intensity was a strong function of ICP source power and processing pressure, while it was almost independent on RIE chuck power in BCl$_3$-based planar ICP processes. It was also worthwhile to note that increase of processing pressure reduced negatively self-induced dc bias. The case was reverse for RIE chuck power. ICP power and gas composition hardly had influence on do bias. We will report OES results of high density planar inductively coupled BCl$_3$ and BCl$_3$/Ar Plasma in detail in this presentation.

• Journal of Magnetics
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• v.20 no.3
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• pp.211-214
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• 2015

$Cr_2O_3$ nanoparticles were prepared via one-step reactive laser ablation of Cr in oxygen. The metastable $CrO_2$ phase was obtained through the subsequent oxidation of $Cr_2O_3$ nanoparticles under $O_2$ with gas pressures of up to 40 MPa. The as-prepared $Cr_2O_3$ nanoparticles are spherical or rectangular in shape with sizes ranging from 20 nm to 50 nm. High oxygen pressure annealing is effective in producing meta-stable $CrO_2$ from as-dried $Cr_2O_3$ nanoparticles, and the $Cr_2O_3$ nanoparticles exhibit a weak ferromagnetic behavior with an exchange bias of up to 11 mT that can be ascribed to the interfacial exchange coupling between uncompensated surface spins and the antiferromagnetic core. The $Cr_2O_3/CrO_2$ nanoparticles exhibit an enhanced saturation magnetization and a reduced exchange bias with an increasing faction of $CrO_2$ due to the elimination of uncompensated surface spins over the $Cr_2O_3$ nanoparticles when exposed to a high pressure of $O_2$ and/or possible phase segregation that results in a smaller grain size for both $Cr_2O_3$ and $CrO_2$.

• Journal of the Korean Vacuum Society
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• v.6 no.3
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• pp.267-274
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• 1997

Silicon shallow trenches applied to the STI (Shallow Trench Isolation) of integrated circuits were etched using inductively coupled $Cl_2$ and HBr/$Cl_2$ plasmas and the effects of process parameters on the etch profiles of silicon trenches and the physical damages on the trench sidewall and bottom were investigated. The increase of inductive power and bias voltage in $Cl_2$ and HBr/$Cl_2$ plasmas increased polysilicon etch rates in general, but reduced the etch selectivities over nitride. In case of $Cl_2$ plasma, low inductive power and high bias voltage showed an anisotropic trench etch profile, and also the addition of oxygen or nitrogen to chlorine increased the etch anisotropy. The use of pure HBr showed a positively angled etch profile and the addition of $Cl_2$ to HBr improved the etch profile more anisotropically. HRTEM study showed physical defects formed on the silicon trench surfaces etched in $Cl_2/N_2$ or HBr/ $Cl_2$ plasmas.