• 센서학회지
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• 제23권2호
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• pp.73-81
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• 2014

Silicon PIN diode radiation sensors and CMOS readout circuits were designed and fabricated in this study. The PIN diodes were fabricated using a 380-${\mu}m$-thick 4-inch n+ Si (111) wafer containing a $2-k{\Omega}{\cdot}cm$ n- thin epitaxial layer. CMOS readout circuits employed the driving and signal processes in a radiation sensor were mixed with digital logic and analog input circuits. The primary functions of readout circuits are amplification of sensor signals and the generation of the alarm signals when radiation events occur. The radiation sensors and CMOS readout circuits were fabricated in the Institute of Semiconductor Fusion Technology (ISFT) semiconductor fabrication facilities located in Kyungpook National University. The performance of the readout circuit combined with the Si PIN diode sensor was demonstrated.

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 2003년도 High Temperature Superconductivity Vol.XIII
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• pp.3-3
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• 2003

• 정보저장시스템학회논문집
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• 제3권3호
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• pp.113-117
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• 2007

재생층이 상변화물질로 이루어진 초해상 광디스크에 있어서, 기록 전과 후에 thermal curing 을 실시하여 신호품질과 재생안정성이 크게 향상되었다. Pre-curing으로 수천 회 이하에서 나타나는 short-term stability가 향상되었고, post-curing 한 후 mid-term stability 가 향상되었다. 그리고, pre- and post-curing 후 noise level 은 전반적으로 $1{\sim}2dB$가 낮아졌고, CNR은 $2{\sim}3dB$, jitter 는 $2{\sim}3%$ 가 향상되었다.

• 센서학회지
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• 제14권3호
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• pp.191-197
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• 2005

When fabricating a vision chip, we should consider the noise problem, such as the fixed pattern noise(FPN) due to the process variation. In this paper, we propose an edge-detection circuit based on biological retina using the offset-free column readout circuit to reduce the FPN occurring in the photo-detector. The offset-free column readout circuit consists of one source follower, one capacitor and five transmission gates. As a result, it is simpler and smaller than a general correlated double sampling(CDS) circuit. A vision chip for edge detection has been designed and fabricated using $0.35\;{\mu}m$ 2-poly 4-metal CMOS technology, and its output characteristics have been investigated.

• Journal of Astronomy and Space Sciences
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• 제19권1호
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• pp.57-66
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• 2002

MCP(microchannel plate)와 지연산 양극판(delay line anode), 그리고 지연선 검출회로로 구성되는, 원자외선 분광기 에 사용될 2차원 지연선(delay line) 방식 의 위 치 검출기 (position sensitive detector)를 설계하고 그 중 지연선 검출회로를 제작하여 동작 및 분해능에 대한 시험을 수행하였다. 이 시험에서는 검출회로의 고유한 분해능을 확인하기 위하여 MCP와 양극판은 각파 특성이 잘 알려진 스티뮬레이션(stimulator)와 양극판 시뮬레이터(anode simulator)로 대체되었다. 제작된 검출회로는 안정적으로 동작하였으며 분광 및 영상 축 방향으로 각각 약 570ps와 약 100ps의 시간 분해능을 가지는 것을 확인하였다

• 전자공학회논문지S
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• 제34S권11호
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• pp.25-33
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• 1997

The end-to-end rate-based control mechanism is used for the flow control of the ABR service to allow much more flexibility in ATM switching system. To accommodate the ABR service effciently many algorithms such as EFCI, EPRCA, ERICA, and CAPC2 have been proposed for the switch algorithm. ABR cells and related RM cells are received at the ATM switch fabric transparently without any processing. And then cells received from the traffic source are queued in the ABR buffer of switching system. The ABR buffer usually has some thresholds for easy congestion control signal transmission. Whatever we use, therefore, these can be many ABR traffic control algorithms to implement the ABR transfer capability. The genertion of congestion indicate signal for ABR control algorithms is determined by ABR buffer satus. And ABR buffer status is determined by ABR cells transfer ratio in ATM switch fabrics. In this paper, we presented the functional structures for control of the ABR traffic capability, proposed the readout scheduling, cell slot allocation of output link and the buffer allocation model for effective ABR traffic guranteeing with considering CBR/VBR traffics in ATM switch. Since the proposed readout scheduling scheme can provide more avaliable space to ABR buffer than existing readout scheduling scheme, generation rate of a SEND signal, that is, BCN signal in destination node can be increased for ABR call connection. Therefore, the proposed scheme, in this paper, can be appropriate as algorithm for effective ABR traffic service on output link of ATM switching node.

• 대한전자공학회논문지SD
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• 제46권6호
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• pp.31-38
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• 2009

휴대용 기기의 소비 전력을 낮추고 영상의 질을 개선하기 위해, 주변 밝기에 따라서 LCD 모듈의 백라이트를 조정하는 방법을 사용할 수 있다. 이를 효과적으로 구현하기 위해서 LCD 패널에 광 센서와 신호취득 회로를 집적하고자 했으며, LTPS TFT 공정을 이용하여 설계했다. 서로 다른 LCD 패널의 광 센서에 대한 특성 편차를 보정하기 위해 새로운 개념의 start-up 보정 방식을 제안하였다. 이와 더불어 광 전류 정보를 디지털 형태로 전달하기 위해 time-to-digital 방식을 사용하였으며, 이를 start-up 보정 방식과 효과적으로 결합하는 dual slope 보정 방법을 제안하였다. LTPS TFT 공정을 이용하여 최종적인 신호취득 회로를 구현하고자, 간단하고 안정적인 회로 구조와 타이밍을 제안하고 설계 및 검증을 진행했다. 설계한 신호취득 회로는 별도의 검사 설비 없이 광 센서 편차의 보정이 가능하며, 60dB 범위의 입력 광에 대해 10배수 구간 마다 4 단계의 디지털 데이터를 출력한다. 신호취득 속도는 100Hz이며, 디지털 변환의 선형 오차는 18% 미만이다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제16권3호
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• pp.380-386
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• 2016

This paper presents a compact and low-power on-chip touch sensor and readout circuit using shunt proximity touch sensor and its design scheme. In the proposed touch sensor readout circuit, the touch panel condition depending on the proximity of the finger is directly converted into the corresponding voltage level without additional signal conditioning procedures. Furthermore, the additional circuitry including the comparator and the flip-flop does not consume any static current, which leads to a low-power design scheme. A new prototype touch sensor readout integrated circuit was fabricated using complementally metal oxide silicon (CMOS) $0.18{\mu}m$ technology with core area of $0.032mm^2$ and total current of $125{\mu}A$. Our measurement result shows that an actual 10.4 inches capacitive type touch screen panel (TSP) can detect the finger size from 0 to 1.52 mm, sharply.

• JSTS:Journal of Semiconductor Technology and Science
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• 제14권1호
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• pp.83-91
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• 2014

This paper presents a capacitive readout circuit for tri-axes microaccelerometer with sub-fF offset calibration capability. A charge sensitive amplifier (CSA) with correlated double sampling (CDS) and digital to equivalent capacitance converter (DECC) is proposed. The DECC is implemented using 10-bit DAC, charge transfer switches, and a charge-storing capacitor. The DECC circuit can realize the equivalent capacitance of sub-fF range with a smaller area and higher accuracy than previous offset cancelling circuit using series-connected capacitor arrays. The readout circuit and MEMS sensing element are integrated in a single package. The supply voltage and the current consumption of analog blocks are 3.3 V and $230{\mu}A$, respectively. The sensitivities of tri-axes are measured to be 3.87 mg/LSB, 3.87 mg/LSB and 3.90 mg/LSB, respectively. The offset calibration which is controlled by 10-bit DECC has a resolution of 12.4 LSB per step with high linearity. The noise levels of tri-axes are $349{\mu}g$/${\sqrt}$Hz, $341{\mu}g$/${\sqrt}$Hz and $411{\mu}g$/${\sqrt}$Hz, respectively.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2001년도 하계종합학술대회 논문집(2)
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• pp.57-60
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• 2001

A readout circuit for Dual band IR detector was proposed and designed. Designed circuit provide to detector a stable diode bias and high injection efficiency using Buffered Direct Injection (BDI) input circuit. Then, amplifier in the unit cell is operated when cell is selected in order to minimize the power consumption. We could confirm through the simulation that designed circuit integrate and output simultaneously the signal generating from the dual band IR detector.