• Title/Summary/Keyword: radio frequency (RF)

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Design of 5.8 GHz Patch Array Antenna for FTMS Roadside Equipment (FTMS 기지국용 5.8 GHz 대역 배열 패치 안테나 설계)

  • Kwon, Han-Joon;Lee, Jae-Jun;Lee, Seung-Hwan;Kim, Yong-Deak
    • The Journal of The Korea Institute of Intelligent Transport Systems
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    • v.7 no.4
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    • pp.61-70
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    • 2008
  • This paper designed the antenna for collecting and servicing the traffic information that apply to freeway Traffic Management System, as using DSRC (Dedicated Short Range Communication). Active DSRC is the technology that is using 5.8GHz Radio Frequency to a mean Sequency and there are a lot of the case occurring a physical electric wave shadowing because of the traveling straight of a electric wave. In such inferior communication environment, it constructed the stabilized communication link that can do collecting and servicing the correct traffic information and designed the beam pattern considering the establishment position of the antenna that can apply to various road environments and a communication area. By considering the communication link environment, this paper designed and manufacture the mean frequency of 5.8GHz, the input loss of -17dB in 75MHz bandwidth, the Axial ratio of 1.5:1, and $2{\times}4$ array microstrip antenna which beam pattern have the characteristic of $55^{\circ}$ horizontal half power beam width and $26^{\circ}$elevation half power beam width and the minimum establishment height of the antenna was designed as 14m for avoiding electric wave shadowing on a physical condition between vehicles

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An Empirical Study on the Factors Affecting RFID Adoption Stage with Organizational Resources (조직의 자원을 고려한 RFID 도입단계별 영향요인에 관한 실증연구)

  • Jang, Sung-Hee;Lee, Dong-Man
    • Asia pacific journal of information systems
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    • v.19 no.3
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    • pp.125-150
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    • 2009
  • RFID(Radio Frequency IDentification) is a wireless frequency of recognition technology that can be used to recognize, trace, and identify people, things, and animals using radio frequency(RF). RFID will bring about many changes in manufacturing and distributions, among other areas. In accordance with the increasing importance of RFID techniques, great advancement has been made in RFID studies. Initially, the RFID research started as a research literature or case study. Recently, empirical research has floated on the surface for announcement. But most of the existing researches on RFID adoption have been restricted to a dichotomous measure of 'adoption vs. non-adoption' or adoption intention. In short, RFID research is still at an initial stage, mainly focusing on the research of the RFID performance, integration, and its usage has been considered dismissive. The purpose of this study is to investigate which factors are important for the RFID adoption and implementation with organizational resources. In this study, the organizational resources are classified into either finance resources or IT knowledge resources. A research model and four hypotheses are set up to identify the relationships among these variables based on the investigations of such theories as technological innovations, adoption stage, and organizational resources. In order to conduct this study, a survey was carried out from September 27, 2008 until October 23, 2008. The questionnaire was completed by 143 managers and workers from physical distribution and manufacturing companies related to the RFID in South Korea. 37 out of 180 surveys, which turned out unfit for the study, were discarded and the remaining 143(adoption stage 89, implementation stage 54) were used for the empirical study. The statistics were analyzed using Excel 2003 and SPSS 12.0. The results of the analysis are as follows. First, the adoption stage shows that perceived benefits, standardization, perceived cost savings, environmental uncertainty, and pressures from rival firms have significant effects on the intent of the RFID adoption. Further, the implementation stage shows that perceived benefits, standardization, environmental uncertainty, pressures from rival firms, inter-organizational cooperation, and inter-organizational trust have significant effects on the extent of the RFID use. In contrast, inter-organizational cooperation and inter-organizational trust did not show much impact on the intent of RFID adoption while perceived cost savings did not significantly affect the extent of RFID use. Second, in the adoption stage, financial issues had adverse effect on both inter-organizational cooperation and the intent against the RFID adoption. IT knowledge resources also had a deterring effect on both perceived cost savings and the extent of the RFID adoption. Third, in the implementation stage, finance resources had a moderate effect on environmental uncertainty and extent of RFID use while IT knowledge resources had also a moderate effect on perceived cost savings and the extent of the RFID use. Limitations and future research issues can be summarized as follows. First, it is difficult to say that the sample is large enough to be representative of the population. Second, because the sample of this study was conducted among manufacturers only, it may be limited in analyzing fully the effect on the industry as a whole. Third, in consideration of the fact that the organizational resources in the RFID study require a great deal of researches, this research may deem insufficient to fulfill the purpose that it initially set out to achieve. Future studies using performance research are, therefore, needed to help better understand the organizational level of the RFID adoption and implementation.

High Performance Flexible Inorganic Electronic Systems

  • Park, Gwi-Il;Lee, Geon-Jae
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.115-116
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    • 2012
  • The demand for flexible electronic systems such as wearable computers, E-paper, and flexible displays has increased due to their advantages of excellent portability, conformal contact with curved surfaces, light weight, and human friendly interfaces over present rigid electronic systems. This seminar introduces three recent progresses that can extend the application of high performance flexible inorganic electronics. The first part of this seminar will introduce a RRAM with a one transistor-one memristor (1T-1M) arrays on flexible substrates. Flexible memory is an essential part of electronics for data processing, storage, and radio frequency (RF) communication and thus a key element to realize such flexible electronic systems. Although several emerging memory technologies, including resistive switching memory, have been proposed, the cell-to-cell interference issue has to be overcome for flexible and high performance nonvolatile memory applications. The cell-to-cell interference between neighbouring memory cells occurs due to leakage current paths through adjacent low resistance state cells and induces not only unnecessary power consumption but also a misreading problem, a fatal obstacle in memory operation. To fabricate a fully functional flexible memory and prevent these unwanted effects, we integrated high performance flexible single crystal silicon transistors with an amorphous titanium oxide (a-TiO2) based memristor to control the logic state of memory. The $8{\times}8$ NOR type 1T-1M RRAM demonstrated the first random access memory operation on flexible substrates by controlling each memory unit cell independently. The second part of the seminar will discuss the flexible GaN LED on LCP substrates for implantable biosensor. Inorganic III-V light emitting diodes (LEDs) have superior characteristics, such as long-term stability, high efficiency, and strong brightness compared to conventional incandescent lamps and OLED. However, due to the brittle property of bulk inorganic semiconductor materials, III-V LED limits its applications in the field of high performance flexible electronics. This seminar introduces the first flexible and implantable GaN LED on plastic substrates that is transferred from bulk GaN on Si substrates. The superb properties of the flexible GaN thin film in terms of its wide band gap and high efficiency enable the dramatic extension of not only consumer electronic applications but also the biosensing scale. The flexible white LEDs are demonstrated for the feasibility of using a white light source for future flexible BLU devices. Finally a water-resist and a biocompatible PTFE-coated flexible LED biosensor can detect PSA at a detection limit of 1 ng/mL. These results show that the nitride-based flexible LED can be used as the future flexible display technology and a type of implantable LED biosensor for a therapy tool. The final part of this seminar will introduce a highly efficient and printable BaTiO3 thin film nanogenerator on plastic substrates. Energy harvesting technologies converting external biomechanical energy sources (such as heart beat, blood flow, muscle stretching and animal movements) into electrical energy is recently a highly demanding issue in the materials science community. Herein, we describe procedure suitable for generating and printing a lead-free microstructured BaTiO3 thin film nanogenerator on plastic substrates to overcome limitations appeared in conventional flexible ferroelectric devices. Flexible BaTiO3 thin film nanogenerator was fabricated and the piezoelectric properties and mechanically stability of ferroelectric devices were characterized. From the results, we demonstrate the highly efficient and stable performance of BaTiO3 thin film nanogenerator.

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Effect of magnesium and calcium phosphate coatings on osteoblastic responses to the titanium surface

  • Park, Ki-Deog;Lee, Bo-Ah;Piao, Xing-Hui;Lee, Kyung-Ku;Park, Sang-Won;Oh, Hee-Kyun;Kim, Young-Joon;Park, Hong-Ju
    • The Journal of Advanced Prosthodontics
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    • v.5 no.4
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    • pp.402-408
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    • 2013
  • PURPOSE. The aim of this study was to evaluate the surface properties and in vitro bioactivity to osteoblasts of magnesium and magnesium-hydroxyapatite coated titanium. MATERIALS AND METHODS. Themagnesium (Mg) and magnesium-hydroxyapatite (Mg-HA) coatings on titanium (Ti) substrates were prepared by radio frequency (RF) and direct current (DC) magnetron sputtering.The samples were divided into non-coated smooth Ti (Ti-S group), Mg coatinggroup (Ti-Mg group), and Mg-HA coating group (Ti-MgHA group).The surface properties were evaluated using scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS). The surface roughness was evaluated by atomic force microscopy (AFM). Cell adhesion, cell proliferation and alkaline phosphatase (ALP) activity were evaluated using MC3T3-E1 cells. Reverse transcription polymerase chain reaction (RT-PCR) analysis was performed. RESULTS. Cross-sectional SEM images showed that Mg and Mg-HA depositionson titanium substrates were performed successfully. The surface roughness appeared to be similaramong the three groups. Ti-MgHA and Ti-Mg group had improved cellular responses with regard to the proliferation, alkaline phosphatase (ALP) activity, and bone-associated markers, such as bone sialoprotein (BSP) and osteocalcin (OCN) mRNA compared to those of Ti-S group. However, the differences between Ti-Mg group and Ti-MgHA group were not significant, in spite of the tendency of higher proliferation, ALP activity and BSP expression in Ti-MgHA group. CONCLUSION. Mg and Mg-HAcoatings could stimulate the differentiation into osteoblastic MC3T3-E1 cells, potentially contributing to rapid osseointegration.

Flip Chip Process by Using the Cu-Sn-Cu Sandwich Joint Structure of the Cu Pillar Bumps (Cu pillar 범프의 Cu-Sn-Cu 샌드위치 접속구조를 이용한 플립칩 공정)

  • Choi, Jung-Yeol;Oh, Tae-Sung
    • Journal of the Microelectronics and Packaging Society
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    • v.16 no.4
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    • pp.9-15
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    • 2009
  • Compared to the flip-chip process using solder bumps, Cu pillar bump technology can accomplish much finer pitch without compromising stand-off height. Flip-chip process with Cu pillar bumps can also be utilized in radio-frequency packages where large gap between a chip and a substrate as well as fine pitch interconnection is required. In this study, Cu pillars with and without Sn caps were electrodeposited and flip-chip-bonded together to form the Cu-Sn-Cu sandwiched joints. Contact resistances and die shear forces of the Cu-Sn-Cu sandwiched joints were evaluated with variation of the height of the Sn cap electrodeposited on the Cu pillar bump. The Cu-Sn-Cu sandwiched joints, formed with Cu pillar bumps of $25-{\mu}m$ diameter and $20-{\mu}m$ height, exhibited the gap distance of $44{\mu}m$ between the chip and the substrate and the average contact resistance of $14\;m{\Omega}$/bump without depending on the Sn cap height between 10 to $25\;{\mu}m$.

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Magnetoresistance of Bi Nanowires Grown by On-Film Formation of Nanowires for In-situ Self-assembled Interconnection

  • Ham, Jin-Hee;Kang, Joo-Hoon;Noh, Jin-Seo;Lee, Woo-Young
    • Proceedings of the Korean Magnestics Society Conference
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    • 2010.06a
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    • pp.79-79
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    • 2010
  • Semimetallic bismuth (Bi) has been extensively investigated over the last decade since it exhibits very intriguing transport properties due to their highly anisotropic Fermi surface, low carrier concentration, long carrier mean free path l, and small effective carrier mass $m^*$. In particular, the great interest in Bi nanowires lies in the development of nanowire fabrication methods and the opportunity for exploring novel low-dimensional phenomena as well as practical application such as thermoelectricity[1]. In this work, we introduce a self-assembled interconnection of nanostructures produced by an on-film formation of nanowires (OFF-ON) method in order to form a highly ohmic Bi nanobridge. A Bi thin film was first deposited on a thermally oxidized Si (100) substrate at a rate of $40\;{\AA}/s$ by radio frequency (RF) sputtering at 300 K. The sputter system was kept in an ultra high vacuum (UHV) of $10^{-6}$ Torr before deposition, and sputtering was performed under an Ar gas pressure of 2m Torr for 180s. For the lateral growth of Bi nanowires, we sputtered a thin Cr (or $SiO_2$) layer on top of the Bi film. The Bi thin films were subsequently put into a custom-made vacuum furnace for thermal annealing to grow Bi nanowires by the OFF-ON method. After thermal annealing, the Bi nanowires cannot be pushed out from the topside of the Bi films due to the Cr (or $SiO_2$) layer. Instead, Bi nanowires grow laterally as a mean s of releasing the compressive stress. We fabricated a self-assembled Bi nanobridge (d=192 nm) device in-situ using OFF-ON through annealing at $250^{\circ}C$ for 10hours. From I-V measurements taken on the Bi nanobridge device, contacts to the nanobridge were found highly ohmic. The quality of the Bi nanobridge was also proved by the high MR of 123% obtained from transverse MR measurements. These results manifest the possibility of self-assembled nanowire interconnection between various nanostructures for a variety of applications and provide a simple device fabrication method to investigate transport properties on nanowires without complex patterning and etching processes.

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Efficient Pseudo Random Functions for the e-seal Protection Protocol (e-seal 보안 프로토콜을 위한 효율적인 Pseudo Random Function)

  • Min Jung-Ki;Kang Seok-Hun;Chung Sang-Hwa;Kim Dong-Kyue
    • Proceedings of the Korean Information Science Society Conference
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    • 2006.06c
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    • pp.274-276
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    • 2006
  • e-seal은 RFID(Radio Frequency IDentification) 기술을 사용하여 원격에서 자동으로 봉인상태를 확인할 수 있는 컨테이너 봉인 장치를 말한다. RFID의 특징상 반도체 칩에 기록된 정보를 제 삼자가 쉽게 판독 및 변조할 수 있다는 취약점으로 인하여 활성화되지 못하고 있는 실정이다. ISO에서는 RFID의 취약점을 보안하기 위한 표준작업(ISO 18185)을 진행 중이다. 이 중, ISO 18185-4는 e-seal에 저장되는 자료나 리더와의 RF통신에서 데이터 보호를 위한 표준이다. 이와 관련된 연구로는 인증 프로토콜과 ISO 18185-4를 위한 보고서로 제출된 보안 프로토콜이 있다. 제안된 e-seal 보안 프로토콜을 적용하기 위해서는 e-seal과 리더 간의 데이터를 암/복호화할 키가 필요하지만, 키 서버를 통해 전달받은 마스터 키를 데이터 암/복호화 키로 바로 사용하는 것은 보안 상의 문제점을 야기할 수 있기 때문에 PRF(Pseudo Random Function)을 이용하여 마스터 키로부터 MTK(Mutual Transient Key)를 유도하고, MTK를 암/복호화 키로 사용해야 한다. 기존의 PRF는 일방향 해시 함수(MD5, SHA 등)를 기반으로 하는 HMAC[2. 3]을 일반적으로 사용하였다. 그러나 일방향 해시 함수는 e-seal과 같은 제한된 자원을 갖는 환경에 적합하지 않다. 따라서, 본 논문에서는 e-seal 보안 프로토콜을 위한 효율적인 PRF을 제안한다. 기존의 일방향 해시 함수 기반이 아닌 블록 암호화 알고리즘을 기반으로 하는 MAC을 이용하여 PRF을 보다 효율적으로 구현하였고, 블록 암호화 알고리즘은 AES를 선택 합성체 $GF((2^4)^2)$을 통해 하드웨어 모듈을 최적화 하였다. AES를 기반으로 하는 MAC은 HMAC에 비해 면적 및 처리율에서 뛰어난 결과를 보여주었다.<0.01).이상의 연구 결과, cook-chill생산 시 녹차 추출물의 첨가가 미생물적 품질유지에 효과가 있다고 사료되는 바 본 연구결과를 기초로 급식소에서 음식 생산 시 녹차 추출물 및 천연 항균성 물질 첨가에 따른 미생물적 품질 및 관능적 품질검사를 통한 레시피 개발에 관한 지속적인 연구가 수행되어야 하겠다.다.다리다보니 점심시간을 활용할 수 없게 되는 문제점에 대한 재검토가 필요하다. 따라서 차후 학교급식의 안전성 확보를 위한 급식환경 개선의 일환으로 식당공간 확보 시 신속한 시간 내에 급식이 가능하도록 넓은 공간과 쾌적한 환경의 식당 조성에 대해 관심을 기울여야 할 것으로 사료된다. 이상 여부를 반영하는 임상증상의 빈도가 높은 청소년기 남녀 중학생의 경우 아침과 저녁의 결식빈도 및 외식과 간식의 빈도가 높았고, 아침식사의 질과 체형만족도가 낮은 것으로 나타나 청소년의 건강과 식습관 및 체형만족도가 상호 관련성이 높은 것으로 나타났다. 따라서 본 연구 결과는 성장기 청소년의 건강 유지를 위하여 바람직한 식습관의 중요성을 재인식할 수 있었으며, 올바른 식습관 확립을 위한 영양교육의 중요성이 재확인되었다.경제적일 것으로 판단된다.er 90 % of good relative dynamic modulus of elasticity due to fineness of formation caused by the increase of the unit powder content and the improvement of flowability, without regard to the replacement of crushed stone fines. Therefore, it can be said that the usage of crushed stone fines can control the strength of super flowing concrete by replacement and re

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Properties of TiN films prepared by using the DC sputtering and HIPIMS. (DC 스퍼터링과 HIPIMS로 제조한 TiN 박막의 특성 비교)

  • Byeon, In-Seop;Yang, Ji-Hun;Jeong, Jae-Hun;Kim, Seong-Hwan;Jeong, Jae-In
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2016.11a
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    • pp.102-102
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    • 2016
  • 본 연구에서는 직류 전원(direct current; DC)을 이용한 스퍼터링과 고전력펄스 마그네트론 스퍼터링(high-power impulse magentron sputtering; HIPIMS)의 두 가지 방법과 빗각 증착을 적용하여 제조한 티타늄 질화물(TiN) 박막의 미세구조 변화가 물성에 미치는 영향을 확인하였다. TiN 박막은 99.5%의 Ti 타겟을 사용하고, Ar가스와 $N_2$ 분위기에서 스테인리스(SUS304)와 초경(cdmented carbide; WC-10wt.%Co) 기판위에 코팅하였다. 기판은 알코올과 아세톤으로 초음파 세척을 실시한 후 진공용기에 장착하고 기본 진공도인 ${\sim}2.0{\times}10^{-5}Torr$ 까지 진공배기를 실시하였다. 기판과 타겟 간의 거리는 DC 스퍼터링은 10 cm, HIPIMS 스퍼터링은 8.5 cm 이었다. 진공용기의 압력이 기본 진공도까지 배기되면 Ar 가스를 ${\sim}10^{-2}Torr$로 주입한 후 기판에 라디오 주파수(radio frequency; RF) 전원으로 약 -800 V의 전압을 인가하여 글로우 방전을 발생시키고 약 30 분간 청정을 실시하였다. 기판의 청정이 끝난 후 기본 진공도까지 배기한 후 Ar와 $N_2$ 가스를 ${\sim}10^{-3}Torr$로 주입하여 TiN 코팅을 실시하였다. 빗각의 크기는 $45^{\circ}$$-45^{\circ}$이며, TiN 박막의 총 두께는 약 $2.5{\sim}4.0{\mu}m$ 로 유지하였다. 공정조건에 따라 TiN 박막의 주상정은 형태와 기울어진 각도가 다른 것을 확인하였다. DC 스퍼터링으로 제조된 TiN 박막은 기판홀더에 약 -100 V 의 bias 전압을 인가하면 인가하지 않은 박막에 비해 치밀한 박막의 성장과 경도 값도 증가하는 사실을 확인하였다. 또한 빗각을 적용하고 bias 전압을 인가하지 않은 시편에서 박리현상이 일어났다. HIPIMS로 제조한 TiN 박막은 bias 전압을 인가한 박막과 인가하지 않은 박막의 주상정 형상과 경도 값에 큰 차이가 없었으며, 박막의 박리현상은 모든 시편에서 일어나지 않았다. DC 스퍼터링으로 제조한 TiN 박막은 bias 전압을 인가하지 않으면 색상이 노란색이 아닌 갈색으로 나타났으며, HIPIMS으로 제조한 박막은 bias 전압 인가 유무에 상관없이 노란색 색상을 나타냈다. 앞서 설명한 DC 스퍼터링과 HIPIMS의 공정조건에 따라 나타난 박막의 경도, 색상, 물성변화 차이는 DC 스퍼터링보다 높은 HIPIMS의 이온화율에서 기인한 것으로 생각된다. 본 연구결과를 이용하면 다양한 형태의 박막 구조 제어가 가능하고 이러한 미세구조 제어를 통해서 박막의 물성도 제어가 가능할 것으로 판단된다.

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The characteristics of bismuth magnesium niobate multi layers deposited by sputtering at room temperature for appling to embedded capacitor (임베디드 커패시터로의 응용을 위해 상온에서 RF 스퍼터링법에 의한 증착된 bismuth magnesium niobate 다층 박막의 특성평가)

  • Ahn, Jun-Ku;Cho, Hyun-Jin;Ryu, Taek-Hee;Park, Kyung-Woo;Cuong, Nguyen Duy;Hur, Sung-Gi;Seong, Nak-Jin;Yoon, Soon-Gil
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.06a
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    • pp.62-62
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    • 2008
  • As micro-system move toward higher speed and miniaturization, requirements for embedding the passive components into printed circuit boards (PCBs) grow consistently. They should be fabricated in smaller size with maintaining and even improving the overall performance. Miniaturization potential steps from the replacement of surface-mount components and the subsequent reduction of the required wiring-board real estate. Among the embedded passive components, capacitors are most widely studied because they are the major components in terms of size and number. Embedding of passive components such as capacitors into polymer-based PCB is becoming an important strategy for electronics miniaturization, device reliability, and manufacturing cost reduction Now days, the dielectric films deposited directly on the polymer substrate are also studied widely. The processing temperature below $200^{\circ}C$ is required for polymer substrates. For a low temperature deposition, bismuth-based pyrochlore materials are known as promising candidate for capacitor $B_2Mg_{2/3}Nb_{4/3}O_7$ ($B_2MN$) multi layers were deposited on Pt/$TiO_2/SiO_2$/Si substrates by radio frequency magnetron sputtering system at room temperature. The physical and structural properties of them are investigated by SEM, AFM, TEM, XPS. The dielectric properties of MIM structured capacitors were evaluated by impedance analyzer (Agilent HP4194A). The leakage current characteristics of MIM structured capacitor were measured by semiconductor parameter analysis (Agilent HP4145B). 200 nm-thick $B_2MN$ muti layer were deposited at room temperature had capacitance density about $1{\mu}F/cm^2$ at 100kHz, dissipation factor of < 1% and dielectric constant of > 100 at 100kHz.

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Enhancements of Crystallization and Opto-Electrical performance of ZnO/Ti/ZnO Thin Films (ZnO/Ti/ZnO 박막의 결정성 및 전기광학적 완성도 개선 연구)

  • Jin-Kyu Jang;Yu-Sung Kim;Yeon-Hak Lee;Jin-Young Choi;In-Sik Lee;Dae-Wook Kim;Byung-Chul Cha;Young-Min Kong;Daeil Kim
    • Journal of the Korean institute of surface engineering
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    • v.56 no.2
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    • pp.147-151
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    • 2023
  • Transparent ZnO (100 nm thick) and ZnO/Ti/ZnO (ZTZ) films were prepared with radio frequency (RF) and direct current (DC) magnetron sputtering on the glass substrate at room temperature. During the ZTZ film deposition, the thickness of the Ti interlayer was varied, such as 6, 9, 12, and 15 nm, while the thickness of ZnO films was kept at 50 nm to investigate the effect of the Ti interlayer on the crystallization and opto-electrical performance of the films. From the XRD pattern, it is concluded that the 9 nm thick Ti interlayer showed some characteristic peaks of Ti (200) and (220), and the grain size of the ZnO (002) enlarged from 13.32 to 15.28 nm as Ti interlayer thickness increased. In an opto-electrical performance observation, ZnO single-layer films show a figure of merit of 1.4×10-11 Ω-1, while ZTZ films with a 9 nm-thick Ti interlayer show a higher figure of merit of 2.0×10-5 Ω-1.