• Bulletin of the Korean Chemical Society
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• 제34권1호
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• pp.167-173
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• 2013

A series of highly efficient red phosphorescent heteroleptic iridium(III) complexes 1-6 containing two cyclometalating 2-(2,4-substitued phenyl)quinoxaline ligands and one chromophoric ancillary ligand were synthesized: (pqx)$_2Ir$(mprz) (1), (dmpqx)$_2Ir$(mprz) (2), (dfpqx)$_2Ir$(mprz) (3), (pqx)$_2Ir$(prz) (4), (dmpqx)$_2Ir$(prz) (5), (dfpqx)$_2Ir$(prz) (6), where pqx = 2-phenylquinoxaline, dfpqx = 2-(2,4-diflourophenyl)quinoxaline, dmpqx = 2-(2,4-dimethoxyphenyl)quinoxaline, prz = 2-pyrazinecarboxylate and mprz = 5-methyl-2-pyrazinecarboxylate. The absorption, emission, electrochemical and thermal properties of the complexes were evaluated for potential applications to organic light-emitting diodes (OLEDs). The structure of complex 2 was also determined by single-crystal X-ray diffraction analysis. Complex 2 exhibited distorted octahedral geometry around the iridium metal ion, for which 2-(2,4-dimethoxyphenyl)quinoxaline N atoms and C atoms of orthometalated phenyl groups are located at the mutual trans and cis-positions, respectively. The emission spectra of the complexes are governed largely by the nature of the cyclometalating ligand, and the phosphorescent peak wavelengths can be tuned from 588 to 630 nm with high quantum efficiencies of 0.64 to 0.86. Cyclic voltammetry revealed irreversible metal-centered oxidation with potentials in the range of 1.16 to 1.89 V as well as two quasi-reversible reduction waves with potentials ranging from -0.94 to -1.54 V due to the sequential addition of two electrons to the more electron-accepting heterocyclic portion of two distinctive cyclometalated C^N ligands.

• 한국광학회지
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• 제11권5호
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• pp.360-364
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• 2000

반도체 포화 흡수거울 (Semiconductor Saturable Absorber Mirror:SESAM)을 이용하여 Cr:LiSAF 레이저를 제작하고 이를 모드록킹 시켰다. 펌핑 레이저는 파장이 667 nm이고, 출력이 500mW인 두 대의 고출력 레이저(Coherent S-67-500C-100-H)가 사용되었으며, 레이저 결정은 Brewster-Brewster 모양인 $Cr^{+3}$의 농도가 1.5%이고 길이가 6mm인 것을 사용하였다. 공진기는 X-형 구조로, 곡률반경이 10cmdls 오목거울과, 군속도 보상을 위한 SF10 프리즘, 투과율이 1%의 출력거울을 사용하였다. 포화흡수체로 사용되는 SESAM의 구조는 맨위층에 10nm의 $AlAs/Al_{0.15}Ga_{0.85}As$ 양자우물과 30쌍의 $AlAs/Al_{0.15}Ga_{0.85}As/GaAs/Al_{0.15}Ga_{0.85}As$반사경으로 구성되어 있다. 펌핑 레이저의 출력이 800mWdlfEo 레이저 출력은 3mW였고, 중심파장은 833nm이었으며 스펙트럼 대역폭은 4nm, 레이저 펄스폭은 220fs 였다.

• 한국재료학회지
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• 제25권1호
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• pp.1-8
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• 2015

This study suggested comprehensive structural characterization methods for the commercial blue light emitting diodes(LEDs). By using the Z-contrast intensity profile of Cs-corrected high-angle annular dark field scanning transmission electron microscope(HAADF-STEM) images from a commercial lateral GaN-based blue light emitting diode, we obtained important structural information on the epilayer structure of the LED, which would have been difficult to obtain by conventional analysis. This method was simple but very powerful to obtain structural and chemical information on epi-structures in a nanometer-scale resolution. One of the examples was that we could determine whether the barrier in the multi-quantum well(MQW) was GaN or InGaN. Plan-view TEM observations were performed from the commercial blue LED to characterize the threading dislocations(TDs) and the related V-pit defects. Each TD observed in the region with the total LED epilayer structure including the MQW showed V-pit defects for almost of TDs independent of the TD types: edge-, screw-, mixed TDs. The total TD density from the region with the total LED epilayer structure including the MQW was about $3.6{\times}10^8cm^{-2}$ with a relative ratio of Edge- : Screw- :Mixed-TD portion as 80%: 7%: 13%. However, in the mesa-etched region without the MQW total TD density was about $2.5{\times}10^8cm^{-2}$ with a relative ratio of Edge- : Screw- :Mixed-TD portion of 86%: 5%: 9 %. The higher TD density in the total LED epilayer structure implied new generation of TDs mostly from the MQW region.

• 한국전기전자재료학회논문지
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• 제24권9호
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• pp.750-754
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• 2011

In this research, the electric characteristic of organic light-emitting diodes(OLEDs) was studied depending on thickness of amorphous fluoropolymer(Teflon-AF) which is the material of hole injection layer to improve electric characteristic of OLEDs. Sample composition was fabricated in double layer. The basic structure was fabricated by ITO/tris(8-hydroxyquinoline) aluminum (Alq3)/Al and the 2 layer was fabricated by ITO/2,2-Bistrifluoromethyl-4,5-Difluoro-1,3-Dioxole(Teflon-AF)/tris(8-hydro xyquinoline) aluminum (Alq3)/Al. The experiment was carried with variation of thickness of Teflon-AF at 1.0, 2.0, 2.5, 3.0 nm. The result showed when Teflon-AF thickness was 2.5 nm, the electric and optical characteristic were well performed. Moreover, when it was compared with Teflon-AF without materials, it was improved 15.1 times more on luminance, 12.7 times more on luminous efficiency and 12.1 times more on external quantum efficiency. Therefore, OLEDs element with optimum hole injection layer reduced energy barrier and driving voltage, and confirmed that it improved efficiency widely.

• Journal of Korean Vacuum Science & Technology
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• 제4권3호
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• pp.78-80
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• 2000

We reprot on the fabrication and characterization of InGaN/GaN multiple quantum well light-emitting diode (LED) with a highly transparent Pt ohmic contact as a current spreading layer. The value of light transmittance of a Pt thin film with a thickness of 8 nm on-GaN was measured to be 85% at 450 nm. The peak wavelength and the full-width at half-maximum (FWHM) of the emission spectrum of the LED at 20 mA were 453 nm and 23 nm, respectively. Pt-contacted LEDs show good electrical properties and high light-output efficiency compared to Ni/Au-contacted ones. These results suggest that a Pt thin film can be used as an effective current spreading layer with high light-transparency.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.463-463
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• 2010

고휘도 고효율 백색 LED (lighting emitting diode)가 차세대 조명광원으로 급부상하고 있다. 백색 LED를 생산하기 위한 공정에서 MOCVD (유기금속화학증착)장비를 이용한 Epi wafer공정은 에피층과 기판의 격자상수 차이와 열팽창계수차이로 인하여 생성되는 에피결함의 제거를 위하여 기판과 GaN 박막층 사이에 완충작용을 해줄 수 있는 버퍼층 (Buffer layer)을 만들고 그 위에 InGaN/GaN MQW (Multi Quantum Well)공정을 하여 고휘도 고효율 백색 LED를 구현할 수 있다. 이 공정에서 기판의 온도가 불균일해지면 wafer 파장 균일도가 나빠지므로 백색 LED의 yield가 떨어진다. 균일한 기판 온도를 갖기 위한 조건으로 기판과 induction heater의 간격, 가스의 흐름, 기판의 회전, 유도가열코일의 디자인 등이 장비의 설계 요소이다. 코일에 교류전류를 흘려주면 이 코일 안 또는 근처에 있는 도전체에 와전류가 유도되어 가열되는 유도가열 방식은 가열 효율이 높아 경제적이고, 온도에 대한 신속한 응답성으로 인하여 열 손실을 줄일 수 있으며, 출력 온도 제어의 용이성 및 배출 가스 등의 오염 없다는 장점이 있다. 본 연구에서는 유도가열방식의 induction heater를 이용하여 회전에 의한 기판의 온도 균일도 측정을 하였다. 기초 실험으로 저항 가열 히터를 통하여 대류에 의한 온도 균일도를 평가하였다. 그 결과 gap이 3 mm일 때, 평균 온도 $166.5^{\circ}C$ 에서 불균일도 6.5 %를 얻었으며 이를 바탕으로 induction heater와 graphite susceptor의 간격이 3 mm일 때, 회전에 의한 온도 균일도를 측정을 하였다. 가열원은 induction heater (viewtong, VT-180C2)를 사용하였고, 가열된 graphite 표면의 온도를 2차원적으로 평가하기 위하여 적외선 열화상 카메라(Fluke, Ti-10)을 이용하여 온도를 측정하였다. 기판을 회전하면서 표면 온도의 평균과 표준 편차를 측정한 결과 2.5 RPM일 때 평균온도 $163^{\circ}C$ 에서 가장 좋은 5.5 %의 불균일도를 확인할 수 있었고, 이를 상용화 전산 유체 역학 코드인 CFD-ACE+의 모델링 결과와 비교 분석 하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.281.2-281.2
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• 2013

Since heavy metal ions included in water or food resources have critical effects on human health, highly sensitive, rapid and selective analysis for heavy metal detection has been extensively explored by means of electrochemical, optical and colorimetric methods. For example, quantum dots (QDs), such as semiconductor QDs, have received enormous attention due to extraordinary optical properties including high fluorescence intensity and its narrow emission peaks, and have been utilized for heavy metal ion detection. However, the semiconductor QDs have a drawback of serious toxicity derived from cadmium, lead and other lethal elements, thereby limiting its application in the environmental screening system. On the other hand, Graphene oxide (GO) has proven its superlative properties of biocompatibility, unique photoluminescence (PL), good quenching efficiency and facile surface modification. Recently, the size of GO was controlled to a few nanometers, enhancing its optical properties to be applied for biological or chemical sensors. Interestingly, the presence of various oxygenous functional groups of GO contributes to opening the band gap of graphene, resulting in a unique PL emission pattern, and the control of the sp2 domain in the sp3 matrix of GO can tune the PL intensity as well as the PL emission wavelength. Herein, we reported a photoluminescent GO array on which heavy metal ion-specific DNA aptamers were immobilized, and sensitive and multiplex heavy metal ion detection was performed utilizing fluorescence resonance energy transfer (FRET) between the photoluminescent monolayered GO and the captured metal ion.

• Applied Science and Convergence Technology
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• 제26권4호
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• pp.79-85
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• 2017

The crack-free AlGaN template has been successfully grown by using selective area growth with triangular GaN facet. The triangular GaN stripe structure was obtained by vertical growth rate enhanced mode with low growth temperature of $950^{\circ}C$ and high growth pressure of 500 torr. The lateral growth rate enhanced mode of AlGaN for crack-free and flat surface was also investigated. Low pressure of 30 torr and high V/III ratio of 4400 were favorable for lateral growth of AlGaN. It was confirmed that the $4{\mu}m$ -thick $Al_{0.2}Ga_{0.8}N$ was crack-free over entire 2-inch wafer. The dislocation density of $Al_{0.2}Ga_{0.8}N$ was as low as ${\sim}7.6{\times}10^8/cm^2$ measured by cathodoluminescence. Based on the high quality AlGaN with low dislocation density, the ultraviolet laser diode epitaxy with cladding, waveguide and GaN/AlGaN multiple quantum well (MQW) was grown by metalorganic chemical vapor deposition. The stimulated emission at 349 nm with full width at half maximum of 1.8 nm from the MQW was observed through optical pumping experiment with 193 nm KrF laser. We also have fabricated the deep ridge type ultraviolet laser diode (UV-LD) with $5{\mu}m-wide$ and $700{\mu}m-long$ cavity for electrical properties. The turn on voltage was below 5 V and the resistance was ${\sim}55{\Omega}$ at applied voltage of 10 V. The amplified spontaneous emission spectrum of UV-LD was also observed from pulsed current injection.

• Journal of the Korean Physical Society
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• 제73권10호
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• pp.1420-1430
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• 2018

We investigate an entangled system, which is analogous to a composite system of a black hole and Hawking radiation. If Hawking radiation is well approximated by an outgoing particle generated from pair creation around the black hole, such a pair creation increases the total number of states. There should be a unitary mechanism to reduce the number of states inside the horizon for black hole evaporation. Because the infalling antiparticle has negative energy, as long as the infalling antiparticle finds its partner such that the two particles form a separable state, one can trace out such a zero energy system by maintaining unitarity. In this paper, based on some toy model calculations, we show that such a unitary tracing-out process is only possible before the Page time while it is impossible after the Page time. Hence, after the Page time, if we assume that the process is unitary and the Hawking pair forms a separable state, the internal number of states will monotonically increase, which is supported by the Almheiri-Marolf-Polchinski-Sully (AMPS) argument. In addition, the Hawking particles cannot generate randomness of the entire system; hence, the entanglement entropy cannot reach its maximum. Based on these results, we modify the correct form of the Page curve for the remnant picture. The most important conclusion is this: if we assume unitarity, semi-classical quantum field theory, and general relativity, then the black hole should violate the Bekenstein-Hawking entropy bound around the Page time at the latest; hence, the infinite production arguments for remnants might be applied for semi-classical black holes, which seems very problematic.

• Journal of Microbiology and Biotechnology
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• 제29권6호
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• pp.952-961
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• 2019

Chlorella spp. are green algae that are found across wide-ranging habitats from deserts to arctic regions, with various strains having adapted to survive under diverse environmental conditions. In this study, two novel Chlorella strains (ABC-002, ABC-008) were isolated from a freshwater lake in South Korea during the winter season and examined for possible use in the biofuel production process. The comparison of ABC-002 and ABC-008 strains with Chlorella vulgaris UTEX265 under two different temperatures ($10^{\circ}C$, $25^{\circ}C$) revealed their cold-tolerant phenotypes as well as high biomass yields. The maximum quantum yields of UTEX25, ABC-002, and ABC-008 at $10^{\circ}C$ were 0.5594, 0.6747, and 0.7150, respectively, providing evidence of the relatively higher cold-resistance capabilities of these two strains. Furthermore, both the biomass yields and lipid content of the two novel strains were found to be higher than those of UTEX265; the overall lipid productivities of ABC-002 and ABC-008 were 1.7 ~ 2.8 fold and 1.6 ~ 4.2 fold higher compared to that of UTEX265, respectively. Thus, the high biomass and lipid productivity over a wide range of temperatures indicate that C. vulgaris ABC-002 and ABC-008 are promising candidates for applications in biofuel productions via outdoor biomass cultivation.