• 센서학회지
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• 제29권4호
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• pp.266-269
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• 2020

In this study, we investigated the effect of a sulfur passivation (S-passivation) process step on the electrical properties of surface-channel In_0.7Ga_0.3As quantum-well (QW) metal-oxide-semiconductor field-effect transistors (MOSFETs) with S/D regrowth contacts. We fabricated long-channel In_0.7Ga_0.3As QW MOSFETs with and without (NH₄)₂S treatment and then deposited 1/4 nm of Al₂O₃/HfO₂ through atomic layer deposition. The devices with S-passivation exhibited lower values of subthreshold swing (74 mV/decade) and drain-induced barrier lowering (19 mV/V) than the devices without S-passivation. A conductance method was applied, and a low value of interface trap density D_it (2.83×10¹² cm^-2eV^-1) was obtained for the devices with S-passivation. Based on these results, interface traps between InGaAs and high-κ are other defect sources that need to be considered in future studies to improve III-V microsensor sensing platforms.

• Nuclear Engineering and Technology
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• 제43권3호
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• pp.301-308
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• 2011

The diametral creep of pressure tubes (PTs) in CANDU (CANada Deuterium Uranium) reactors is one of the principal aging mechanisms governing the heat transfer and hydraulic degradation of the heat transport system (HTS). PT diametral creep leads to diametral expansion, which affects the thermal hydraulic characteristics of the coolant channels and the critical heat flux (CHF). The CHF is a major parameter determining the critical channel power (CCP), which is used in the trip setpoint calculations of regional overpower protection (ROP) systems. Therefore, it is essential to predict PT diametral creep in CANDU reactors. PT diametral creep is caused mainly by fast neutron irradiation, temperature and applied stress. The objective of this study was to develop a bundle position-wise linear model (BPLM) to predict PT diametral creep employing previously measured PT diameters and HTS operating conditions. The linear model was optimized using a genetic algorithm and was devised based on a bundle position because it is expected that each bundle position in a PT channel has inherent characteristics. The proposed BPLM for predicting PT diametral creep was confirmed using the operating data of the Wolsung nuclear power plant in Korea. The linear model was able to predict PT diametral creep accurately.

• Nuclear Engineering and Technology
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• 제48권6호
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• pp.1291-1302
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• 2016

This paper presents a new and efficient scheme to determine the optimal neutron source position in a model near-equilibrium pressurized water reactor, which is based on the OPR1000 Hanul Unit 3 Cycle 7 configuration. The proposed scheme particularly assigns importance of source positions according to the local adjoint flux distribution. In this research, detailed pin-by-pin reactor adjoint fluxes are determined by using the Monte Carlo KENO-VI code from solutions of the reactor homogeneous critical adjoint transport equations. The adjoint fluxes at each allowable source position are subsequently ranked to yield four candidate positions with the four highest adjoint fluxes. The study next simulates ex-core detector responses using the Monte Carlo MAVRIC code by assuming a neutron source is installed in one of the four candidate positions. The calculation is repeated for all positions. These detector responses are later converted into an inverse count rate ratio curve for each candidate source position. The study confirms that the optimal source position is the one with very high adjoint fluxes and detector responses, which is interestingly the original source position in the OPR1000 core, as it yields an inverse count rate ratio curve closest to the traditional 1/M line. The current work also clearly demonstrates that the proposed adjoint flux-based approach can be used to efficiently determine the optimal geometry for a neutron source and a detector in a modern pressurized water reactor core.

• 한국수소및신에너지학회논문집
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• 제33권6호
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• pp.761-768
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• 2022

In the hope of realizing carbon neutrality, Korea has established the goal of expanding the supply of hydrogen electric vehicles through a roadmap to revitalize the hydrogen economy. A prerequisite for successful supply expansion is securing the safety of hydrogen electric vehicles. Certain parts, such as the hydrogen transport pipe and tank, in hydrogen electric vehicles are exposed to high-pressure hydrogen gas over long periods of time, so the hydrogen enters the grain boundary of material, resulting in a degradation of the parts referred to as hydrogen embrittlement. In addition, since the safety of parts utilizing hydrogen varies depending on the type of material used and its environmental characteristics, the necessity for the enactment of a hydrogen embrittlement regulation has emerged and is still being discussed as a Global Technical Regulation (GTR). In this paper, we analyze a hydrogen compatibility material evaluation method discussed in GTR and present a direction for the development of Korean-type hydrogen compatibility material evaluation methods.

• 마이크로전자및패키징학회지
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• 제29권4호
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• pp.49-53
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• 2022

본 연구는 최적화된 전기발광 성능을 가진 양자점 전계 발광 다이오드 소자를 제작하기 위해 RF sputtering 기법으로 Zn_0.85Mg_0.15O 박막을 전자수송층으로 적용하였다. 일반적으로 양자점 전계 발광 다이오드에서 ZnO 나노입자는 적절한 에너지 준위를 가지고 있어 전자 이동도가 빠르고 용액 처리가 용이하다는 장점으로 전자 수송층으로 널리 사용되는 재료이다. 그러나, 용액형 ZnO 나노입자의 불안정성 문제는 아직 해결되지 않고 있다. 이를 해결하기 위해 본 연구에서는 ZnO에 15 % Mg을 도핑한 ZnMgO 박막을 RF sputtering법으로 제작하고 전자수송층으로 적용한 소자를 최적화하였다. 최적화된 ZnMgO 박막을 이용한 소자는 최대 휘도 15,972 cd/m², 전류효율 7.9 cd/A를 보였다. Sputtering ZnMgO 박막 기반 양자점 전계 발광 다이오드 소자는 용액형 ZnO 나노입자의 문제를 해결하고 미래 디스플레이 소자 제작 기술의 적용 가능성을 확인하였다.

• 대한전자공학회논문지SD
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• 제37권9호
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• pp.15-22
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• 2000

1.55${\mu}m$ InGaAsP/InGaAsP 다중양자우물주고 전계흡수형 광변조기에서 캐리어 수송현상과 입력광 세기가 소광특성에 미치는 영향을 조사하였다. 포와송 방정식과 전자 및 정공의 전류 연속방정식, 광분포들을 양자우물에서의 전게강도에 따른 흡수계수들을 고러하여 self-consistent하게 해석하였다. 이종접합계면에서의 캐리어의 축적 및 광도파로영역에서의 공간전하에 의한 전계차폐 현상은 입사광 파워가 증가할 수록 입사단 영역에서 심하게 나타남을 알 수 있었다. 캐리어의 전계차폐에 의한 소광비 저감은 변조기가 길이가 200${\mu}m$정도로 긴 경우에는 입사광 파워가 약 10mW이상에 대해서 심하게 나타날 수 있음을 알 수 있었다. 이러한 캐리어의 전계차폐에 따른 소광비 특성열화는 특히 입사광 파워가 클 수 있는 1..55${\mu}m$ DFB-LD와 전계흡수형 광변조기 집적소자나 광변조기 길이가 수십 ${\mu}m$로 짧은 초고속 광흡수변조기의 경우에 더욱 심하게 나타날 수 있음을 지적하였다.

• 한국전기전자재료학회논문지
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• 제19권7호
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• pp.605-610
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• 2006

We have investigated $Al_{0.25}Ga_{0.75}As/In_{0.2}Ga_{0.8}As$ structures for pseudomorphic high electron mobility transistor(pHEMT), which were grown by molecular beam epitaxy(MBE) and consequently annealed by rapid thermal anneal(RTA), using Hall measurement, photoluminescence, and transmission electron microscopy (TEM). According to intensity and full-width at half maximum maintained stable at the same energy level, the quantized energy level in $Al_{0.25}Ga_{0.75}As/In_{0.2}Ga_{0.8}As$ quantum wells was independent of the RTA conditions. However, the Hall mobility was decreased from $6,326cm^2/V.s\;to\;2,790cm^2/V.s\;and\;2,078cm^2/V.s$ after heat treatment respectively at $500^{\circ}C\;and\;600^{\circ}C$. The heat treatment which is indispensable during the fabrication procedure would cause catastrophic degradation in electrical transport properties. TEM observation revealed atomically non-uniform interfaces, but no dislocations were generated or propagated. From theoretical consideration about the mobility changes owing to inter-diffusion, the degraded mobility could be directly correlated to the interface scattering as long as samples were annealed below $600^{\circ}C$ lot 1 min.

• 한국응용과학기술학회지
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• 제29권3호
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• pp.459-465
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• 2012

본 연구에서 7,7'-(2,2'dimethoxy-1,1'-binaphthyl-3,3'-diyl) bis(4-(thiophen-2-yl) benzo[e] [1,2,5] thiadiazole (TBT) 라는 binaphthyl기를 기반으로 가지는 녹색 도판트 물질을 합성하였다. 추가적으로 인광 발광 물질인 iridium(III)bis[(4,6-di-fluoropheny)-pyridinato -N,C2]picolinate (FIrpic)을 홀 수송용 호스트 물질인 N,N'-dicarbazolyl-3,5-benzene (mCP)에 도핑하고, TBT와 bis(2-phenylquinolinato)-acetylacetonate iridium(III) (Ir(pq)2acac)를 전자 수송용 호스트 물질인 1,3,5-tris(N-phenylbenzimidazole-2-yl)benzene (TPBi)에 도핑하여 백색 빛을 발광하는 white organic light emitting diode (OLED)를 제작하였다. TBT를 사용하여 제작한 white OLED의 최대발광 효율과 외부 양자 효율은 각각 5.94 cd/A 과 3.23%를 나타냄을 알 수 있었다. Commission Internationale de I'Eclairage (CIE) 색 좌표의 값은 1000 nit에서 (0.34, 0.36)을 띄면서 순백색을 구현함을 확인하였다.

• Bulletin of the Korean Chemical Society
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• 제32권8호
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• pp.2671-2676
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• 2011

Nanocrystalline $TiO_2$ spherical particle (NP) with a dimension of 5 ${\times}$ 5.5 nm and several nanorods (NR) with different aspect ratios (diameter ${\times}$ length: 5 ${\times}$ 8.5, 4 ${\times}$ 15, 4 ${\times}$ 18 and 3.5 ${\times}$ 22 nm) were selectively synthesized by a solvothermal process combined with non-hydrolytic sol-gel reaction. With varying the molar ratio of TTIP to oleic acid from 1:1 to 1:16, the NRs in the pure anatase phase were elongated to the c-axis direction. The prepared NP and NRs were applied for the formation of nanoporous $TiO_2$ layers in dye-sensitized solar cell (DSSC). Among them, NR2 ($TiO_2$ nanorod with 4 ${\times}$ 15 nm) exhibited the highest cell performance: Its photovoltaic conversion efficiency (${\eta}$) of 6.07%, with $J_{sc}$ of 13.473 mA/$cm^2$, $V_{oc}$ of 0.640 V, and FF of 70.32%, was 1.44 times that of NP with a size of 5 ${\times}$ 5.5 nm. It was observed from the transient photoelectron spectroscopy and the incident photon to current conversion efficiency (IPCE) spectra that the $TiO_2$ films derived from NR2 demonstrate the longest electron diffusion length ($L_e$) and the highest external quantum efficiency (EQE).

• 전자공학회논문지D
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• 제34D권12호
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• pp.89-100
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• 1997

This paper investigated a new type of low voltage threshold switch (LVTS). As distinguished from the many other types of electronic threshold switches, the LvTS is ; voltage controlled, occurs at low voltages ($V_{2}$ $O_{5}$lV devices. The average low threshold voltage < $V_{LVT}$>=218 mV (standard deviation =24mV~kT/q, where T=300K), and was independent of the device area (x100) and amorphous oxide occurred in an ~22.angs. thick interphase of the V/amorphous- $V_{2}$ $O_{5}$ contacts. At $V_{LVT}$ there was a transition from an initially low conductance (OFF) state into a succession of quantized states of higher conductance (ON). The OFF state was spatically homogeneous and dominated by tunneling into the interphase. The ON state conductances were consistent with the quantized conductances of ballistic transport through a one dimensional, quantum point contact. The temeprature dependence of $V_{LVT}$, and fit of the material parameters (dielectric function, barrier energy, conductivity) to the data, showed that transport in the OFF and ON states occurred in an interphase with the characteristics of, respectively, semiconducting and metallic V $O_{2}$. The experimental results suggest that the LVTS is likely to be observed in interphases produced by a critical event associated with an inelastic transfer of energy.rgy.y.rgy.