• Journal of Plant Biotechnology
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• v.37 no.4
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• pp.567-573
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• 2010

To ascertain the effect of over-expressed maize calreticulin in tomato plant on tobamovirus movement in addition to validating potentiality of the gene (ZmCRT) as a means for the virus-resistance resource, four ZmCRT-expressing homozygous lines were generated from the T0 plants as using an Agrobacterium-mediated transformation, nucleic acid analyses, and a conventional breeding method. Of them, a line was subjected to the bioassay for tolerances to tobacco mosaic virus-U1 (TMV-U1) and tomato mosaic virus (ToMV) followed by RT-PCR and a chlorophyll fluorescence quenching analyses. Both transgenic plants transcribing ZmCRT and wild-type plants showed no symptom by 20 days after viruses inoculation, however the photosystem II quantum yield parameter measured from the upper leaves of ToMV-inoculated plants revealed that ZmCRT transgenic plants have higher photosynthetic ability than wild-type ones at that time, which indirectly implies that over-expressed ZmCRT product acts as a barrier to the cell-to-cell and/or systemic movement of ToMV. Moreover, ZmCRT transgenic plants showed remarkably longer shoot length than wild-type ones in 40 days after TMV-U1 or ToMV inoculation each, which might be resulted from higher photosynthetic ability during the phase not yet showing any external symptoms. Collectively, over-expressed ZmCRT protein in tomato plants is able to interrupt the systemic movement of infected TMV-U1 and ToMV even though not perfect.

• Journal of the Korean Chemical Society
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• v.64 no.6
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• pp.350-353
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• 2020

The validity of the calculation method based on the local mode in hydrogen-bonded water molecules was investigated by comparing the frequencies of the local and normal modes of OH stretching vibration in water molecules. By calculating a monomer, dimer, and trimer of water molecules using a quantum chemical ab initio theory, we examined how the frequencies of the local and normal modes and the anharmonicity of local modes vary with molecular cluster size. It was shown that, as the number of molecules increases from monomer to trimer, the anharmonicity of OH bonds increases and the difference between local and normal mode frequencies decreases. This confirms that local-mode-based calculations that can easily handle the anharmonicity can be appropriate for the calculation of the OH stretching frequency of water molecules in the condensed phase.

• Korean Journal of Optics and Photonics
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• v.35 no.5
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• pp.241-249
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• 2024

In this study, we demonstrate compact mode-locked laser operations using three different kinds of Yb³⁺-doped potassium double tungstate laser crystals, Yb:KGdW, Yb:KYW and Yb:KLuW, operating near 1040 nm at a repetition rate of 405 MHz. We utilized a semiconductor saturable absorber mirror as a mode locker, successfully maintaining mode-locked states for several hours without any Q-switching instabilities for all types of laser crystals. Notably, the Yb:KGdW mode-locked laser produces the shortest pulse with a duration of 108 fs, delivering 125 mW of output power. Additionally, we conducted a numerical analysis by solving the Haus master equation, which incorporates the effect of group delay dispersion and self-phase modulation, using the standard split-step Fourier method.

• Nuclear Engineering and Technology
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• v.56 no.10
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• pp.4018-4030
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• 2024

The in-vessel retention through external reactor vessel cooling (IVR-ERVC) strategy is a key management strategy for early termination of a nuclear severe accident that can threaten the integrity of the reactor vessel. To simulate the physical phenomena of the molten corium, the smoothed particle hydrodynamic (SPH) method is utilized in this study. The SPH method is a Lagrangian computational fluid dynamic (CFD) method that can simulate multi-fluid stratification, turbulence, natural circulation, radiative heat transfer, thermal ablation, and crust formation. To address the external vessel cooling, it is coupled with a conventional 1-D nuclear system analysis method. The 1-D system analysis code can calculate the two-phase natural circulation of cooling water and the convective heat transfer on the external reactor vessel wall. These two simulation codes exchange the temperature and heat flux of the reactor vessel outer wall. This study numerically simulated the IVR-ERVC strategy for a Korean high-power reactor and compared it with the traditional lumped parameter method (LPM). Unlike LPM, this study provides localized detailed data about the thermal hydraulic behavior of molten corium and visualization of phenomena in the IVR-ERVC strategy. This enhances our understanding of the phenomena in IVR-ERVC strategy and introduces new perspectives.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.34 no.5
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• pp.163-172
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• 2024

White light-emitting diodes (W-LEDs) are widely used in displays and lighting due to their advantages of compact size, high efficiency, and long lifespan compared to traditional light sources. Glass-ceramics produced by inducing crystallization in amorphous glass through heating, finds applications in various high-performance fields. Its properties can be tailored through the addition of nucleating agents or phase separation phenomena. By forming nanometer-sized crystals, glass-ceramics can retain its characteristics while maintaining transparency in the visible range, making it suitable for a range of applications including optical switches, optical converters, lasers, medical devices, and sensors. Additionally, glass-ceramics containing rare earth elements, transition metals, quantum dots, and nanocrystals can convert blue or ultraviolet light into visible light, thereby enhancing the performance of W-LEDs. This paper explores the optical properties of glass-ceramics derived from oxide and fluoride glasses, its potential applications in W-LEDs, and recent research trends.

• Journal of Korean Society of Forest Science
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• v.97 no.5
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• pp.508-515
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• 2008

Sycamore (Platanus occidentalis L.) seedlings were grown under low light intensity and ozone treatments to investigate the role of the light environment in their response to chronic ozone stress. One-year-old seedlings of Platanus occidentalis L. were grown in pots for 3 weeks under low light (OL, $150{\mu}mol{\cdot}m^{-2}{\cdot}s^{-1}$) and high light (OH, $300{\mu}mol{\cdot}m^{-2}{\cdot}s^{-1}$) irradiance in combination with 150 ppb of ozone fumigation. After three weeks of ozone and light treatment, seedlings were placed in ozone free clean chamber for 3 weeks for recovery from ozone stress with same light conditions to compare recovery capacity. Ozone fumigation determined an impairment of the photosynthetic process. Reduction of leaf dry weight (14%) and shoo/root ratio (17%) were observed in OH treatment. OL treatment also showed severe reductions in leaf dry weight and shoot/root ratio by 48% and 36% comparing to control, respectively. At the recovery phase, OH-treated plants recovered their biomass, whereas OL-treated plant showed reduction in leaf dry weight (52%) and shoot/root ratio (49%). OH-treated plants reached similar relative growth rate (RGR) comparing to control, whereas OL-treated plants showed lower RGR in stem height. However, there were no significant differences in response to those treatments in stem diameter RGR at the recovery phase. Ozone treatment produced significant reduction of net photosynthesis in both high and low light treatments. Carboxylation efficiency and apparent quantum yield in OL-treated plants showed significant reductions rate to 10% and 45%, respectively. At the recovery stage, ozone exposed seedlings under high light had similar photosynthetic capacity comparing to control plants. Antioxidant enzymes activities such as superoxide dismutase (SOD), ascorbate peroxidase (APX), and glutathione reductase (GR) were increased in ozone fumigated plants only under low light. The present work shows that the physiological changes occur in photosynthesis-related parameters and growth due to ozone and low light stress. Thus, low light seems to enhance the detrimental effects of ozone on growth, photosynthesis, and antioxidant enzyme responses.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.19 no.1
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• pp.699-704
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• 2018

One-dimensional nanostructures have attracted increasing attention because of their unique electronic, optical, optoelectrical, and electrochemical properties on account of their large surface-to-volume ratio and quantum confinement effect. Vertically grown nanowires have a large surface-to-volume ratio. The vapor-liquid-solid (VLS) process has attracted considerable attention for its self-alignment capability during the growth of nanostructures. In this study, vertically aligned silicon oxide nano-pillars were grown on Si\$SiO_2$(300 nm)\Pt substrates using two-zone thermal chemical vapor deposition system via the VLS process. The morphology and crystallographic properties of the grown silicon oxide nano-pillars were investigated by field emission scanning electron microscopy and transmission electron microscopy. The diameter and length of the grown silicon oxide nano-pillars were found to be dependent on the catalyst films. The body of the silicon oxide nano-pillars exhibited an amorphous phase, which is consisted with Si and O. The head of the silicon oxide nano-pillars was a crystalline phase, which is consisted with Si, O, Pt, and Ti. The vertical alignment of the silicon oxide nano-pillars was attributed to the preferred crystalline orientation of the catalyst Pt/Ti alloy. The vertically aligned silicon oxide nano-pillars are expected to be applied as a functional nano-material.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.174-175
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• 2012

(In, Ga) N-based III-nitride semiconductor materials have been viewed as the most promising materials for the applications of blue and green light emitting devices such as light-emitting diodes (LEDs) and laser diodes. Although the InGaN alloy can have wide range of visible wavelength by changing the In composition, it is very hard to grow high quality epilayers of In-rich InGaN because of the thermal instability as well as the large lattice and thermal mismatches. In order to avoid phase separation of InGaN, various kinds of structures of InGaN have been studied. If high-quality In-rich InGaN/GaN multiple quantum well (MQW) structures are available, it is expected to achieve highly efficient phosphor-free white LEDs. In this study, we proposed a novel InGaN double hetero-structure grown on GaN nano-pyramids to generate broad-band red-color emission with high quantum efficiency. In this work, we systematically studied the optical properties of the InGaN pyramid structures. The nano-sized hexagonal pyramid structures were grown on the n-type GaN template by metalorganic chemical vapor deposition. SiNx mask was formed on the n-type GaN template with uniformly patterned circle pattern by laser holography. GaN pyramid structures were selectively grown on the opening area of mask by lateral over-growth followed by growth of InGaN/GaN double hetero-structure. The bird's eye-view scanning electron microscope (SEM) image shows that uniform hexagonal pyramid structures are well arranged. We showed that the pyramid structures have high crystal quality and the thickness of InGaN is varied along the height of pyramids via transmission electron microscope. Because the InGaN/GaN double hetero-structure was grown on the nano-pyramid GaN and on the planar GaN, simultaneously, we investigated the comparative study of the optical properties. Photoluminescence (PL) spectra of nano-pyramid sample and planar sample measured at 10 K. Although the growth condition were exactly the same for two samples, the nano-pyramid sample have much lower energy emission centered at 615 nm, compared to 438 nm for planar sample. Moreover, nano-pyramid sample shows broad-band spectrum, which is originate from structural properties of nano-pyramid structure. To study thermal activation energy and potential fluctuation, we measured PL with changing temperature from 10 K to 300 K. We also measured PL with changing the excitation power from 48 ${\mu}W$ to 48 mW. We can discriminate the origin of the broad-band spectra from the defect-related yellow luminescence of GaN by carrying out PL excitation experiments. The nano-pyramid structure provided highly efficient broad-band red-color emission for the future applications of phosphor-free white LEDs.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.386-386
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• 2012

For white light emitting diode (LED) applications, it has been reported that Y3Al5O12:Ce3+ (YAG:Ce) in nano-sized phosphor performs better than it does in micro-sized particles. This is because nano-sized YAG:Ce can reduce internal light scattering when coated onto a blue LED surface. Recently, there have been many reports on the synthesis of nano-sized YAG particles using bottom-up method, such as co-precipitation method, sol-gel process, hydrothermal method, solvothermal method, and glycothermal method. However, there has been no report using top-down method. Top-down method has advantages than bottom-up method, such as large scale production and easy control of doping concentration and particle size. Therefore, in this study, nano-sized YAG:Ce phosphors were synthesized by a high energy beads milling process with varying beads size, milling time and milling steps. The beads milling process was performed by Laboratory Mill MINICER with ZrO2 beads. The phase identity and morphology of nano-sized YAG:Ce were characterized by X-ray powder diffraction (XRD) and field-emission scanning electron microscopy (FESEM), respectively. By controlling beads size, milling time and milling steps, we synthesized a size-tunable and uniform nano-sized YAG:Ce phosphors which average diameters were 100, 85 and 40 nm, respectively. After milling, there was no impurity and all of the peaks were in good agreement with YAG (JCPDS No. 33-0040). Luminescence and quantum efficiency (QE) of nano-sized YAG:Ce phosphors were measured by fluorescence spectrometer and QE measuring instrument, respectively. The synthesized YAG:Ce absorbed light efficiently in the visible region of 400-500 nm, and showed single broadband emission peaked at 550 nm with 50% of QE. As a result, by considering above results, high energy beads milling process could be a facile and reproducible synthesis method for nano-sized YAG:Ce phosphors.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.342-343
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• 2013

AlSb is a promising material for optical devices, particularly for high-frequency and nonlinear-optical applications. And AlSb offers significant potential for devices such as quantum-well lasers, laser diodes, and heterojunction bipolar transistors. In this work we study molecular beam epitaxy (MBE) growth of an unstrained AISb film on a GaAs substrate and identify the real-time monitoring capabilities of in situ spectroscopic ellipsometry (SE). The samples were fabricated on semi-insulating (0 0 1) GaAs substrates using MBE system. A rotating sample stage ensured uniform film growth. The substrate was first heated to $620^{\circ}C$ under As2 to remove surface oxides. A GaAs buffer layer approximately 200 nm- thick was then grown at $580^{\circ}C$. During the temperature changing process from $580^{\circ}C$ to $530^{\circ}C$, As2 flux is maintained with the shutter for Ga being closed and the reflection high-energy electron diffraction (RHEED) pattern remaining at ($2{\times}4$). Upon reaching the preset temperature of $530^{\circ}C$, As shutter was promptly closed with Sb shutter open, resulting in the change of RHEED pattern from ($2{\times}4$) to ($1{\times}3$). This was followed by the growth of AlSb while using a rotating-compensator SE with a charge-coupled-device (CCD) detector to obtain real-time SE spectra from 0.74 to 6.48 eV. Fig. 1 shows the real time measured SE spectra of AlSb on GaAs in growth process. In the Fig. 1 (a), a change of ellipsometric parameter ${\Delta}$ is observed. The ${\Delta}$ is the parameter which contains thickness information of the sample, and it changes in a periodic from 0 to 180o with growth. The significant change of ${\Delta}$ at~0.4 min means that the growth of AlSb on GaAs has been started. Fig. 1b shows the changes of dielectric function with time over the range 0.74~6.48 eV. These changes mean phase transition from pseudodielectric function of GaAs to AlSb at~0.44 min. Fig. 2 shows the observed RHEED patterns in the growth process. The observed RHEED pattern of GaAs is ($2{\times}4$), and the pattern changes into ($1{\times}3$) with starting the growth of AlSb. This means that the RHEED pattern is in agreement with the result of SE measurements. These data show the importance and sensitivity of SE for real-time monitoring for materials growth by MBE. We performed the real-time monitoring of AlSb growth by using SE measurements, and it is good agreement with the results of RHEED pattern. This fact proves the importance and the sensitivity of SE technique for the real-time monitoring of film growth by using ellipsometry. We believe that these results will be useful in a number of contexts including more accurate optical properties for high speed device engineering.