• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.276-277
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• 2006

1mm-thick BLT ceramics were sintered in accordance with a bulk ceramic fabrication process. AII XRD peaks detected in the sintered ceramics were indexed as the Bi-layered perovskite structure without secondary phases. Density was increased with increasing the sintering temperature up to $1050^{\circ}C$ and the maximum value was about 98% of the theoretical density. The remanent polarization (2Pr) value of BLT ceramic sintered at $1050^{\circ}C$ was approximately $6.5\;{\mu}C/cm^2$ at the applied voltage of 4.5 kV. The calculated electromechanical coupling factor ($k_t$) of it was about 5% and the mechanical quality factor (Qm) was about 2200. From these results, a BLT ceramic target for pulsed laser deposition (PLD) system was successfully fabricated.

• Korean Journal of Materials Research
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• v.30 no.7
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• pp.333-337
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• 2020

Orthorhombic DyMnO₃ films are fabricated epitaxially on Nb-1.0 wt%-doped SrTiO₃ single crystal substrates using pulsed laser deposition technique. The structure of the deposited DyMnO₃ films is studied by X-ray diffraction, and the epitaxial relationship between the film and the substrate is determined. The electrical transport properties reveal the diodelike rectifying behaviors in the all-perovskite oxide junctions over a wide temperature range (100 ~ 340 K). The forward current is exponentially related to the forward bias voltage, and the extracted ideality factors show distinct transport mechanisms in high and low positive regions. The leakage current increases with increasing reverse bias voltage, and the breakdown voltage decreases with decrease temperature, a consequence of tunneling effects because the leakage current at low temperature is larger than that at high temperature. The determined built-in potentials are 0.37 V in the low bias region, and 0.11 V in the high bias region, respectively. The results show the importance of temperature and applied bias in determining the electrical transport characteristics of all-perovskite oxide heterostructures.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.143.2-143.2
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• 2013

Nanomechanical and electrical properties of vanadium dioxide (VO2) thin films across thermal-driven phase transition are investigated with ultra-high vacuum atomic force microscopy. VO2 thin films have been deposited on the n-type heavily doped silicon wafer by pulsed laser deposition. X-ray diffraction reveals that it is textured polycrystalline with preferential orientation of (100) and (120) planes in monoclinic phase. As the temperature increases, the friction decreased at the temperature below the transition temperature, and then the friction increased as increasing temperature above the transition temperature. We attribute this observation to the combined effect of the thermal lubricity and electronic contribution in friction. Furthermore, the dependence of nanoscale conductance on the local pressure was indicated at the various temperatures, and the result was discussed in the view of pressure-induced metal-insulator transition.

• Korean Journal of Metals and Materials
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• v.48 no.9
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• pp.856-860
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• 2010

Silver nanoparticles were formed on silica substrates through thin film dewetting at high temperature. The microstructural and morphological evolution of the particles were characterized as a function of processing variables such as initial film thickness, annealing time, and temperature. Silver thin films were deposited onto the silica using a pulsed laser deposition system and annealed in reducing atmosphere to induce agglomeration of the films. The film thicknesses before dewetting were in the range of 5 to 25 nm. A noticeable agglomeration occurs with annealing at temperatures higher than $300^{\circ}C$, and higher annealing temperature increases particle size uniformity for the same film thickness sample. Average particle size linearly correlates to the film thickness, but it does not strongly depend on annealing temperature and time, although threshold temperature for complete dewetting increases with an increase of film thickness. Lower annealing temperature develops faceted surface morphology of the silver particles by enhancing the growth of the low index crystal plane of the particles.

• Progress in Superconductivity and Cryogenics
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• v.23 no.2
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• pp.14-18
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• 2021

We investigated the structural suitability of GdFeO₃ (GdFO) as a buffer layer for the GdBa₂xCu₃O_7-x (GdBCO) superconducting films. GdFO films with different thicknesses and GdBCO thin films were all prepared by using a pulsed laser deposition technique. The analyses of X-ray diffraction and EXAFS data indicates that the c-axis parameter increases and the Fe-O bond length decreases with the GdFO thickness due to the compressive stain induced by the lattice mismatch between GdFO and STO substrate and as a result, the Debye-Waller factor, an index of disorder in the local structure near the Fe-O bond, increases with the GdFO thickness. However, for the GdBCO/GdFO bilayer structure, the Debye-Waller factor decreases as the GdFO thickness increases indicating a diminished disorder by the structural coupling between GdFO and GdBCO. These results indicate that an appropriate thickness of GdFO is required to be utilized as a magnetic buffer layer for the GdBCO superconducting films.

• Progress in Superconductivity
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• v.2 no.2
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• pp.71-75
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• 2001

The effect of annealing step-edges of LaAlO$_3$ and MgO single crystal substrates on YBa$_2$Cu$_3$O$_{7}$ junction has been studied. The step-edge was fabricated by argon ion milling and was annealed at 105$0^{\circ}C$ in 1 attn oxygen pressure. We compared AFM image near step-edge of the substrates between before and after annealing process. And YBa$_2$Cu$_3$O$_{7}$ thin film was deposited on the step-edge by a standard pulsed laser deposition. The step-edge junctions were characterized by current-voltage curves at 77 K. The annealing of step-edges of MgO substrate improved the current-voltage characteristic of Josephson junction: double steps in the current-voltage characteristic disappeared. However the annealing for LaAlO$_3$ did not improve the junction property.rty.

• Progress in Superconductivity and Cryogenics
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• v.11 no.2
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• pp.1-6
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• 2009

We report a successful fabrication of $high-J_c\;NdBa_2Cu_3O_{7-{\delta}}$ (NdBCO) films on $SrTiO_3$(STO) (100) substrates by pulsed laser deposition (PLD) in a relatively wide processing window. Under various oxygen pressures controlled by either 1%$O_2$/Ar mixture gas or pure $O_2$ gas, strongly c-axis oriented NdBCO films were grown at the substrate temperature $(T_s)\;of\;800^{\circ}C$ in 800 mTorr with 1%$O_2$/Ar gas and also in 400 and 800 mTorr with pure $O_2$ gas. These samples exhibited $T_c$ values over 90K and $J_c$ values of $2.8-3.5MA/cm^2$ at 77K in self-field (77K, sf). On the other hand, $J_c$ values over $1A/cm^2$ were obtained at the temperature regions of $700-830^{\circ}C$ in 800 mTorr with 1%$O_2$/Ar gas at those of $750-830^{\circ}C$ in 800 mTorr with pure $O_2$ gas. Unlike previous reports, resent results support that the PLD processing window for high-Jc NdBCO films is not narrow.

• Electrical & Electronic Materials
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• v.16 no.9
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• pp.63.2-64
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• 2003

Epitaxial yttrium-stabilized HfO$_2$ thin films were deposited on p-type (100) Si substrates by pulsed laser deposition at a relatively lower substrate temperature of 550. Transmission electron microscopy observation revealed a fixed orientation relationship between the epitaxial film and Si; that is, (100)Si.(100)HfO$_2$ and [001]Si/[001]HfO$_2$. The film/Si interface is not atomically flat, suggesting possible interfacial reaction and diffusion, X-ray photoelectron spectrum analysis also revealed the interfacial reaction and diffusion evidenced by Hf silicate and Hf-Si bond formation at the interface. The epitaxial growth of the yttrium stabilized HfO$_2$ thin film on bare Si is via a direct growth mechanism without involoving the reaction between Hf atoms and SiO$_2$ layer. High-frequency capacitance-voltage measurement on an as-grown 40-A yttrium-stabilized HfO$_2$ epitaxial film yielded an dielectric constant of about 14 and equivalent oxide thickness to SiO$_2$ of 12 A. The leakage current density is 7.0${\times}$ 10e-2 A/$\textrm{cm}^2$ at 1V gate bias voltage.

• Journal of Ceramic Processing Research
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• v.13 no.spc2
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• pp.394-397
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• 2012

In this work, we studied the influence of the dopant elements concentration on the properties of SnO2 thin films deposited by pulsed laser deposition. X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), Hall effect measurement and UV-Vis studies were performed to characterize the deposited films. XRD results showed that the films had polycrystalline nature with tetragonal rutile structure. FE-SEM micrographs revealed that the as deposited films composed of dense microstructures with uniform grain size distribution. All the films show n-type conduction and the best transparent conductive oxide (TCO) performance was obtained on 6 wt% Sb2O5 doped SnO2 film prepared at pO2 of 60mtorr and Ts of 500 ℃. Its resitivity, optical transmittance, figure of merit are 7.8 × 10-4 Ω cm, 85% and 1.2 × 10-2 Ω-1, respectively.

• Progress in Superconductivity and Cryogenics
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• v.25 no.2
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• pp.10-13
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• 2023

High-T_C superconductivity (HTSC) has been the central issue in the field of condensed matter physics for decades. An essential part of the research on superconductivity is finding new exotic superconductors. It was recently suggested that Ir-substituted La_0.7Sr_0.3MnO₃ (LSMIO) is a new high-T_C superconductor. However, systematic studies to experimentally verify the superconductivity have not been done. Here, we report the growth processes of LSMIO thin films and their electrical transport properties. We observed a clear negative correlation between the intensity of the laser utilized for film deposition and the Curie temperature of the deposited film. We attributed this effect to the suppression of Sr concentration in the LSMIO films as the laser intensity increased. However, our LSMIO films show conventional ferromagnetism instead of HTSC. To realize the HTSC in LSMIO systems, further exploration of diverse compositions of LSMIO compounds is essential.