• Laser Solutions
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• v.2 no.3
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• pp.52-61
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• 1999

The laser induced forward transfer(LIFT) technique employs a pulsed laser to transfer parts of a thin metal film from an optically transparent target onto an arbitrary substrate in close proximity to the metal film on the target. In this work, a two-step method, the combination of LIFT process, in which a Au film deposited on the $Al_2$O$_3$ substrate by Nd:YAG laser and subsequent Au electroless metal plating on the by LIFT process generated Au seed, was presented. The influence of laser parameters, wavelength, laser power, film thickness and overlap ratio of pulse tracks, on the shapes of deposit and conductor line after electroless plating is experimentally studied. As a results, the threshold power densities for ablation, deposition and metallization were determined and comparison of threshold value between the wave length 1064nm and the second harmonic generated 532nm. In odor to determine a possible application in the electronic industry, a smallest conduct spot size, line width and isolated line space were generated.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.787-789
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• 2000

High temperature superconducting YBCO films have been grown on MgO substrates by pulsed laser deposition (PLD) with Nd:YAG laser Superconducting microwave filter was fabricated by conventional photolithography method. We have designed filter with the center frequency of 14 GHz. We have measured the center frequency of filter at 77 K and its critical temperature 89K. Also we have designed another filter to compare frequency responses. The measured frequency responses will be presented.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.9
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• pp.1596-1601
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• 2007

Aluminum doped zinc oxide (AZO) thin films were deposited on coming glass substrates using an Nd:YAG pulsed laser deposition technology. The AZO thin films were deposited with various growth conditions such as the substrate temperature and oxygen partial pressure. In this work, we used various measurement technologies in order to investigate the electrical, structural, and optical properties of the AZO thin films. Among the AZO thin films, the one prepared at the substrate temperature of $300^{\circ}C$ and oxygen partial pressure of 5 mTorr showed the best properties of an electrical resistivity of $4.63{\times}10^{-4}{\Omega}{\cdot}cm$, a carrier concentration of $9.25{\times}10^{20}cm^{-3}$, and a carrier mobility of $31.33cm^2/V{\cdot}s$. All the AZO thin films showed an high average optical transmittance over 90 % in visible region.

• Progress in Superconductivity and Cryogenics
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• v.5 no.3
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• pp.20-22
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• 2003

Y$_2$O$_3$ films were pulsed laser deposited on cube textured Ni and Ni-W substrates to be used as a single buffer layer of YBCO coated conductor. Initial deposition of $Y_2$O$_3$ films was performed in a reducing atmosphere, and subsequent deposition was done in the base pressure of the chamber and oxygen atmosphere. The $Y_2$O$_3$ films have a strong cube texture (The full width at half maximum of the ø-scan of $Y_2$O$_3$ was 8.4 which was the same as that of metal substrate) and smooth crack-free microstructure. The biaxially textured YBCO films (The full width at half maximum of the ø-scan was 10.2) pulsed laser deposited on the $Y_2$O$_3$/metal exhibited Tc(R=0) of 86.5K and Jc of 0.7 MA/cm2 at 77K in self field, representing that the $Y_2$O$_3$ single buffer layer is an efficient diffusion barrier of Ni and thus very promising for the achievement of high-Jc YBCO coated conductor.

• Progress in Superconductivity
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• v.13 no.2
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• pp.117-121
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• 2011

We have fabricated $FeSe_x$ superconducting thin films at much different substrate temperatures of 430 and $610^{\circ}C$ on $Al_2O_3$(0001) substrates by using a pulsed laser deposition (PLD) technique. Superconducting transitions for both films were shown around 10 K, but their transition width and growth directions of grains were different. We found that superconducting tetragonal FeSe phases and non-superconducting hexagonal FeSe phases were coexisted in the sample grown at the low temperature of $430^{\circ}C$, whereas the hexagonal FeSe phase was decreased with increasing fabrication temperatures.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.5
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• pp.297-302
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• 2014

$La_{0.5}Sr_{0.5}CoO_3$ (LSCO) electrode thin films with a resistivity of ~ 1,600 ${\mu}{\Omega}cm$ were grown on c-$Al_2O_3$ (0001) substrate. $ZnSnO_3$ (ZTO) thin films with different thicknesses were directly grown on LSCO/c-$Al_2O_3$ (0001) substrates at a substrate temperature that ranged from 550 to $750^{\circ}C$ using Pulsed Laser Deposition (PLD). The secondary phase $Zn_2SnO_4$ occurred during the growth of ZTO films and it became more significant with further increasing substrate temperature. Polarization-electric-field (P-E) hysteresis characteristics, with a remnant polarization and coercive field of 0.05 ${\mu}C/cm^2$ and 48 kV/cm, respectively, were obtained in the ZTO film grown at $700^{\circ}C$ in 200 mTorr.

• Journal of Magnetics
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• v.17 no.2
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• pp.78-82
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• 2012

CoNiFe(CNF)/$BaTiO_3(BTO)$/CoNiFe(CNF) multilayered thin films were deposited on Pt/Ti/$SiO_2$/Si substrates by using pulsed laser deposition (PLD) system. We fabricated three different thin films of BTO, BTO/CNF and CNF/BTO/CNF for magneto-capacitor and studied their crystalline structure, surface and interface morphology, and magnetic and electrical properties. When three different structures of multilayered thin film were compared, magnetization of CNF/BTO/CNF thin films was decreased by magnetic and dielectric interaction. Also we confirmed that capacitance of CNF/BTO/CNF multilayered thin film was enhanced as being near tetragonal structure with increasing of c/a ratio because of atomic bonding at interface between BTO dielectric and CNF magnetic materials. Finally, we studied the change of the capacitance of CNF/BTO/CNF multilayered thin film with magnetic field for emergence of magnetocapacitance and suggested a possibility of enhanced capacitance.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.04b
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• pp.65-68
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• 2002

The effect of low-temperature ZnO buffer layer has been investigated for the optical properties of ZnO thin films. ZnO buffers and thin films have been deposited using the pulsed laser deposition technique. ZnO buffer layers were grown at $200^{\circ}C$ with various thickness of 0 to 60 nm, followed by raising the substrate temperature to $400^{\circ}C$ to grow $2{\mu}m$ ZnO thin films. The buffer layers could relax stresses induced by the lattice mismatch and different thermal expansion coefficients between ZnO thin films and sapphire substrate. In order to identify the optical properties of ZnO thin films, PL measurement was used. From the results of PL measurement, all the fabricated ZnO thin films with buffer layers have shown intensive UV emission with a narrow linewidth. ZnO thin films with buffer layer of 20 nm have shown the strongest UV emission. It was found that the use of ZnO buffer layer plays an important role to improve the intensive UV emission of the ZnO thin films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.209-209
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• 2010

Multiferroic properties of $BaTiO_3-CuFe_2O_4$ thin films grown on highly-textured Pt(111)/$TiO_2/SiO_2$/Si(100) substrates were studied. $CuFe_2O_4$ ceramic target was synthesized by mixing oxide powders of CuO, $Fe_2O_03$, $BaTiO_3$ ceramic target was also prepared separately. The film structure was of bi-layer type, where $BaTiO_3$ layer lies underneath of $CuFe_2O_4$ layer, where both layers were grown by pulsed laser deposition technique. We will report the ferroelectric and magnetic properties of $BaTiO_3-CuFe_2O_4$ bi-layer films in some detail.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.391-391
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• 2010

The stability enhancement of Znic oxide thin film transistor deposited by PLD-DBD has been reported here using the bias temperature stress test. Znic oxide (ZnO) thin films were deposited on $SiO_2$/Si (100) by pulsed laser deposition method with and without dielectric barrier discharge (DBD) method. The DBD is the efficient method to adopt the nitrogen ions into the thin films. The TFT characteristics of ZnO TFTs with and without Nirogen (N) doping show similar results with $I_{on/off}$ of $10^5{\sim}10^6$. However. the bias temperature stress (BTS) test of N-doped ZnO TFT with DBD shows higher stability than that of ZnO TFT.