• Nuclear Engineering and Technology
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• v.54 no.2
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• pp.437-441
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• 2022

In this study, we developed a neutron time-of-flight (nTOF) measurement system for a 1.7-MV tandem proton accelerator with a target covered with 300-nm-thick lithium (Li) layer. With implementation of beam chopping module after its ion source, the accelerator is configured to operate in pulsed-beam mode with a pulse width <50 ns at 20-kHz repetition rate. This enables the gamma flash-type nTOF measurement system to identify the neutron generated with 3-MeV proton beam energy. The nTOF system consists of a 30" cylindrical NaI(Tl) and four stilbene scintillation detectors. The NaI(Tl) scintillator is placed 50 cm from the Li target to measure the time of beam irradiation on the target, and the stilbene detectors are placed 2 and 2.4 m away to measure nTOF at each location. The nTOF system successfully measured the generated neutron energy at irradiated proton energies of 2.6 and 3.0 MeV with an average energy resolution of 15%.

• Journal of Periodontal and Implant Science
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• v.26 no.4
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• pp.989-1002
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• 1996

The purpose of this study was to determine the effect of a pulsed Nd:YAG laser irradiation on human gingival tissues. The patients, who were planned to be treated by clinical crown lengthening procedure and gingivectomy, were selected. All the patients received oral hygiene instruction, scaling and root planing at preoperation. The crest of gingival tissue on upper and lower anterior teeth was irradiated by a pulsed Nd:YAG laser(El. EN. EN060, Italy) with a fiber optic of 300 m in contact mode for 20 seconds. Gingival tissues were divided into 4 groups according to the laser power of 1.0W(10Hz, 100mJ), 2.0W(20Hz, 100mJ), 3.0W(30Hz, 100mJ) and 4.0W(40Hz, 100mJ). Immediately after the laser irradiation, the specimens were excised, fixed 10% neutral formalin, sectioned $4-6{\mu}m$ thick, stained by Hematoxylin-Eosin and Periodic Acid Schiff stain and observed under light microscope. The removed tissue depth and the coagulated layer depth due to a laser irradiation by a laser irradiation were measured on the microphotographs. The difference of measurements according to the different laser power was statistical1y analyzed by Kruskal Wallis Test with SAS program. The results were as follows : 1. In histologic findings of irradiated gingival tissues; a. In the irradiated gingival specimen with 1.0W laser power, some vesicles were observed in limited superficial layer of gingival epithelium. b. In the irradiated gingival specimen with 2.0W and 3.0W laser power, the epithelium was almost removed except for the traces of viable basal cell remnants at ret peg, and coagulation necrosis related with the thermal effect of laser was noted. c. In the irradiated gingival specimen with 4.0W laser power, complete removal of epithelium, partial removal of underlying connective tissue, and the coagulation necrosis of subjacent gingival tissue were shown. 2. The removed tissue depth was deeper in the irradiated specimens with higher power. There was a statistical significance in the difference of removed tissue depth between 1.0W group ($44.54{\pm}6.99um$) and 3.0W group ($99.75{\pm}6.64{\mu}m$), and between 1.0W group($44.54{\pm}6.99{\mu}m$) and 4.0W group($111.36{\pm}4.50{\mu}m$), and between 2.0W group($98.01{\pm}4.53{\mu}m$) and 4.0W group($111.36{\pm}4.50{\mu}m$)(P<0.05). 3. The coagulated layer depth was deeper in the irradiated specimens with higher power. There was a statistical significance in the difference of coagulated layer depth between 1.0W group($31.82{\pm}8.99{\mu}m$) and 3.0W group($55.99{\pm}20.94{\mu}m$), and between 1.0W group($31.82{\pm}8.99{\mu}m$) and 4.0W group($83.68{\pm}10.34{\mu}m$)(P<0.05). From this study, the results demonstrated that the effects of a pulsed Nd:YAG laser irradiation on gingival tissues seemed to depend on the laser power and that the irradiation with high power could be harmful to adjacent healthy tissue.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.17 no.8 s.111
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• pp.773-787
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• 2006

An airborne radar is an essential aviation electronic system for the aircraft to perform various civil and/or military missions in all weather environments. This paper presents the design, development, and test results of the multi-mode X-band pulsed Doppler radar system test model for helicopter-borne flight test. This radar system consists of 4 LRUs(Line-Replacement Unit), which include antenna unit, transmitter and receiver unit, radar signal & data processing unit and display Unit. The developed core technologies include the planar array antenna, TWTA transmitter, coherent I/Q detector, digital pulse compression, MTI, DSP based Doppler FFT filter, adaptive CFAR, moving clutter compensation, platform motion stabilizer, and tracking capability. The design performance of the developed radar system is verified through various ground fixed and moving vehicle test as well as helicopter-borne field tests including MTD(Moving Target Detector) capability for the Doppler compensation due to the moving platform motion.

• Progress in Medical Physics
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• v.18 no.2
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• pp.65-72
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• 2007

An echo planar imaging (EPI)-based spin-echo sequence Is often used to obtain diffusion tensor imaging (DTI) data on most of the clinical MRI systems, However, this sequence is confounded with the susceptibility artifacts, especially on the temporal lobe in the human brain. Therefore, the objective of this study was to design a pulse sequence that relatively immunizes the susceptibility artifacts, but can map diffusion tensor components in a single-shot mode. A multi-slice multi-echo pulsed-gradient spin-echo (MePGSE) sequence with eight echoes wasdeveloped with selective refocusing pulses for all slices to map the full tensor. The first seven echoes in the train were diffusion-weighted allowing for the observation of diffusion in several different directions in a single experiment and the last echo was for crusher of the residual magnetization. All components of diffusion tensor were measured by a single shot experiment. The sequence was applied in diffusive phantoms. The preliminary experimental verification of the sequence was illustrated by measuring the apparent diffusion coefficient (ADC) for tap water and by measuring diffusion tensor components for watermelon. The ADC values in the series of the water phantom were reliable. The MePGSE sequence, therefore, may be useful in human brain studies.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.155.2-155.2
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• 2013

Strain-relaxed SiGe layer on Si substrate has numerous potential applications for electronic and opto- electronic devices. SiGe layer must have a high degree of strain relaxation and a low dislocation density. Conventionally, strain-relaxed SiGe on Si has been manufactured using compositionally graded buffers, in which very thick SiGe buffers of several micrometers are grown on a Si substrate with Ge composition increasing from the Si substrate to the surface. In this study, a new plasma process, i.e., the combination of PIII&D and HiPIMS, was adopted to implant Ge ions into Si wafer for direct formation of SiGe layer on Si substrate. Due to the high peak power density applied the Ge sputtering target during HiPIMS operation, a large fraction of sputtered Ge atoms is ionized. If the negative high voltage pulse applied to the sample stage in PIII&D system is synchronized with the pulsed Ge plasma, the ion implantation of Ge ions can be successfully accomplished. The PIII&D system for Ge ion implantation on Si (100) substrate was equipped with 3'-magnetron sputtering guns with Ge and Si target, which were operated with a HiPIMS pulsed-DC power supply. The sample stage with Si substrate was pulse-biased using a separate hard-tube pulser. During the implantation operation, HiPIMS pulse and substrate's negative bias pulse were synchronized at the same frequency of 50 Hz. The pulse voltage applied to the Ge sputtering target was -1200 V and the pulse width was 80 usec. While operating the Ge sputtering gun in HiPIMS mode, a pulse bias of -50 kV was applied to the Si substrate. The pulse width was 50 usec with a 30 usec delay time with respect to the HiPIMS pulse. Ge ion implantation process was performed for 30 min. to achieve approximately 20 % of Ge concentration in Si substrate. Right after Ge ion implantation, ~50 nm thick Si capping layer was deposited to prevent oxidation during subsequent RTA process at $1000^{\circ}C$ in N2 environment. The Ge-implanted Si samples were analyzed using Auger electron spectroscopy, High-resolution X-ray diffractometer, Raman spectroscopy, and Transmission electron microscopy to investigate the depth distribution, the degree of strain relaxation, and the crystalline structure, respectively. The analysis results showed that a strain-relaxed SiGe layer of ~100 nm thickness could be effectively formed on Si substrate by direct Ge ion implantation using the newly-developed PIII&D process for non-gaseous elements.

• Aerospace Engineering and Technology
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• v.6 no.1
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• pp.83-91
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• 2007

An experimental verification of multipactor(MP) discharge for S-band diplexer as a sample DUT for space application by an in-house MP test facility is proposed. The designed diplexer having two BPFs for Rx and Tx is applied to a design of five pole inter-digital cavity type band pass filter with chebyshev response, it has 2.7 % bandwidth centered at 2.232 and 2.055 GHz for Rx, Tx, respectively. To avoid the MP discharge, the accurate design and analysis methods based on 3D EM field analysis are considered. The proposed in-house MP test facility consists of a phase detecting system using a doubly balanced mixer as a simple, low cost and real time MP test method compared with results of previously well-known MP detection systems as cross reference methods. The calculated MP threshold RF input power is 43.13 dBm. The measured one is 43 dBm and 44 dBm for CW, pulsed mode test, respectively.

• Biomedical Science Letters
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• v.10 no.3
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• pp.309-315
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• 2004

Methicillin resistant Staphylococcus aureus (MRSA) is one of the most common nosocomial pathogens. Many hospitals are facing the problems which they have to use expensive antibiotics and suffer from long term hospital study of patients due to MRSA. This study is to survey MRSA nasal colonization of patients and doctors, and to investigate the mode of transmission of MRSA by pulsed field gel electrophoresis (PFGE) and then use these data to prevent further spread of cross infection and reduce nosocomial infection. Subjects of this study were 201 patients with MRSA infection at an university hospital in Busan from Sept. 1997 to Aug. 1998. Bacterial genotypes of MRSA strains isolated from nares and wound of patients (14 cases) and nares of doctors (8 cases) were analyzed by PFGE. Nasal cultures of 20 I patients for detecting nasal colonization of MRSA were performed and incidence rate of nasal colonization was 40％ (80/201). Among 201 patients MRSA were acquired from hospital in 140 (70％) patients and were acquired from community 61 (30％) patients. Among 14 pairs of MRSA from colonized or infected sites and anterior nares, DNA patterns of 10 pairs (71.4％) were equal. 86％ (12/14) MRSA strains isolated from patients and 12.5％ (1/8) MRSA strains isolated from doctors show same pattern. DNA patterns were changed in some doctors after nasal oint. Treatment. It could be inferred that the most sources of MRSA in hospital are the endemically existing MRSA. Therefore, we believe that it would be necessary to control MRSA nasal colonization of the patients and the related medical teams to reduce the medical cost and to improve the efficacy of medical cares.

• Proceedings of the KWS Conference
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• 2002.10a
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• pp.176-180
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• 2002

During the last two decades the laser beam has progressed from a sophisticated laboratory apparatus to an adaptable and viable industrial tool. Especially, in its welding mode, the laser offers high travel speed, low distortion, and narrow fusion and heat-affected zones (HAZ). The principal obstacle to selection of a laser processing method in production is its relatively high equipment cost and the natural unwillingness of production supervision to try something new until it is thoroughly proven. The major objective of this work is focused on the combined features of gas tungsten arc and a low-power cold laser beam. Although high-power laser beams have been combined with the plasma from a gas tungsten arc (GTA) torch for use in welding as early as 1980, recent work at the Ohio State University has employed a low power laser beam to initiate, direct, and concentrate a gas tungsten arcs. In this work, the laser beam from a 7 watts carbon monoxide laser was combined with electrical discharges from a short-pulsed capacitive discharge GTA welding power supply. When the low power CO laser beam passes through a special composition shielding gas, the CO molecules in the gas absorbs the radiation, and ionizes through a process known as non-equilibrium, vibration-vibration pumping. The resulting laser-induced plasma (LIP) was positioned between various configurations of electrodes. The high-voltage impulse applied to the electrodes forced rapid electrical breakdown between the electrodes. Electrical discharges between tungsten electrodes and aluminum sheet specimens followed the ionized path provided by LIP. The result was well focused melted spots.

• Progress in Superconductivity and Cryogenics
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• v.15 no.3
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• pp.5-8
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• 2013

We have studied Hall effect for potassium (K)-doped $BaFe_2As_2$ superconducting thin films by analyzing the relation between the longitudinal resistivity (${\rho}_{xx}$) and the Hall resistivity (${\rho}_{xy}$). The thin films used in this study were fabricated on $Al_2O_3$ (000l) substrates by using an ex-situ pulsed laser deposition (PLD) technique under a high-vacuum condition of ~$10^{-6}$ Torr. The samples showed the high superconducting transition temperatures ($T_c$) of ~ 40 K. The ${\rho}_{xx}$ and the ${\rho}_{xy}$ for K-doped $BaFe_2As_2$ thin films were measured by using a physical property measurement system (PPMS) with a temperature sweep (T-sweep) mode at an applied current density of $100A/cm^2$ and at magnetic fields from 0 up to 9 T. We report the T-sweep results of the ${\rho}_{xx}$and the ${\rho}_{xy}$ to investigate Hall scaling behavior on the basis of the relation of ${\rho}_{xy}={A{\rho}_{xx}}^{\beta}$. The ${\beta}$ values are $3.0{\pm}0.2$ in the c-axis-oriented K-doped $BaFe_2As_2$ thin films, whereas the thin films with various oriented-directions like a polycrystal showed slightly lower ${\beta}$ than that of c-axis-oriented thin films. Interestingly, the ${\beta}$ value is decreased with increasing magnetic fields.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.46 no.12
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• pp.14-21
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• 2009

In this paper, a Ka-band 10 W power amplifier module with seven power MMIC bare dies is designed and fabricated using MIC technology which combines multiple MMIC chips on a thin film substrate. Modified Wilkinson power dividers/combiners and CBFGCPW-Microstrip transitions for suppressing resonance and reducing connection loss are utilized for high-gain and high-power millimeter wave modules. A new TTL pulse timing control scheme is proposed to improve output power degradation due to large bypass capacitors in the gate bias circuit. Pulse-mode operation time is extended more than 200 nsec and output power increase of 0.62 W is achieved by applying the proposed scheme to the Ka-band 10 W power amplifier module operating in the pulsed condition of 10 kHz and $5\;{\mu}sec$. The implemented power amplifier module shows a power gain of 59.5 dB and an output power of 11.89 W.