• Laser Solutions
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• 제14권1호
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• pp.19-24
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• 2011

This work reports the results for laser shock peening of duplex stainless steel (22% Chromium - 5% Nickel) using a pulsed Nd:YAG laser (wavelength = 532nm, pulse width = 8ns). for the application to high-capacity pumps for seawater desalination plants. By properly selecting the process parameters such as laser intensity of 10GW/$cm^2$, laser pulse density of 75pulse/$mm^2$, and $100{\mu}m$ thick aluminum foil as an absorbent coating layer, the surface hardness of duplex stainless steel could be enhanced by 26%, from 256HV to 323HV with little changes in surface morphology and roughness. The depth of laser shock peened layer was measured to be around 2mm. The large enhancement of surface hardness is considered to have high practical importance in minimizing abrasive and corrosive deterioration of pump parts.

• Journal of Welding and Joining
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• 제34권6호
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• pp.35-41
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• 2016

The experimental study has been performed through residual stress using the Ti6Al4V, investigate the effect of laser shock peening on laser welding process residual stress of Ti6Al4V welds in a reduce safety weld zone. This research evaluated the effects of shock waves from laser shock peening with a pulsed Nd:YAG laser on Ti6Al4V welding specimens, through the analysis of the residual stress of the specimens. The residual stress could be formed by the depth of 1 mm if the proposed method of reducing the residual stress is performed in the optimal condition. The welded structures and products during the production process increase the mechanical property of repeated stress, which could be expected to extend the fatigue life of the structure.

• Proceedings of the KIEE Conference
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• 대한전기학회 2004년도 하계학술대회 논문집 C
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• pp.2079-2082
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• 2004

This paper study on OLEDs(Organic Light Emitting Diodes) panel using PLD(Pulsed Laser Deposition) methode. Deposition of organic was used Q-stitched Nd/YAG laser in 355 nm and reduced organic pellet for PLD method. Organic morphology was measured AFM(Atomic Forced Microscope) and emitting efficiency was measured luminance meter.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2000년도 춘계학술대회 논문집 디스플레이 광소자 분야
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• pp.125-128
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• 2000

ZnO thin films on silicon substrates have been deposited by pulsed laser deposition technique(PLD). A Nd:YAG laser was used with the wavelength of 355 nm. In order to investigate the effect of oxygen post-annealing treatment on the property of ZnO thin films, deposited film has been annealed at the substrate temperature of $440^{\circ}C$. After post-annealing treatment in the oxygen ambient, the stoichiometry of ZnO film has been characterized be improved which results in higher UV emission intensity of photoluminescence.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.29-32
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• 2001

Hydrogen passivation of Si nanocrystals identifies luminescence mechanism indirectly. Si nanocrystallites thin films on p-type (100) Si substrate have been fabricated by pulsed laser deposition technique using a Nd:YAG laser After deposition, Si nanocrystallites thin films have been annealed at 600$^{\circ}C$ and 760$^{\circ}C$ in nitrogen ambient, respectively. Hydrogen passivation was subsequently performed at 500$^{\circ}C$ in forming gas (95 % N$_2$ + 5 % H$_2$) for an 1 hour. We report the photoluminescnece(PL) property of Si thin films by the hydrogen passivation. The luminescence mechanism of Si nanocrystallites has also been investigated.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2002년도 춘계학술대회 논문집 디스플레이 광소자 분야
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• pp.38-41
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• 2002

The variation of photoluminescence(PL) properties of Si thin films was investigated by changing deposition temperatures, Si-rich silicon oxide films on p-type (100) Si substrate have been fabricated by pulsed laser deposition(PLD) technique using a Nd:YAG laser. During deposition, the substrates were kept at the temperature range of room temperature(RT) to $400^{\circ}C$. After deposition, samples were annealed at $800^{\circ}C$ in nitrogen ambient, Strong Blue PL has been observed on RT-deposited Si nanocrystallites. When the deposition temperature was increased over $100^{\circ}C$, PL intensities abruptly decreased. The experimental results show the growing mechanism of Si nanocrystallites by PLD.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 디스플레이 광소자분야
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• pp.88-91
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• 2003

Si nanocrystallites thin films have been fabricated by pulsed laser deposition using a Nd:YAG laser. After deposition, samples were annealed at the temperature range of 400 to $800^{\circ}C$. Hydrogen passivation was then performed in the forming gas ($95%N_{2}+5%H_{2}$) at $500^{\circ}C$. Strong violet-indigo photoluminescence has been observed at room temperature on nitrogen ambient-annealed Si nanocrystallites. As a result of photoluminescence spectra and infrared absorption spectra, we conclude that the violet-indigo PL efficiency is related with oxygen vacancy in the $SiO_x$(x= 1.6-1.8) matrix.

• Proceedings of the KIEE Conference
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• 대한전기학회 1999년도 하계학술대회 논문집 E
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• pp.2130-2132
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• 1999

This paper is research for the practicability of instrument which can apply to the transformer on the spot with the criteria of insulation oil with the method of measuring the volume of $H_2O$ in the insulation oil by playing insulation oil with the significant role for precaution diagnosis on breakdown of transformer among power system into Nd:YAG laser.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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• pp.173-176
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• 2004

Silicon thin films on p-type(100) silicon substrate have been prepared by a pulsed laser deposition(PLD) technique using a Nd:YAG laser. The pressure of the environmental gas during deposition was 1 Torr. After deposition, silicon thin film has been annealed in nitrogen ambient. Strong blue photoluminescence(PL) has been observed at room temperature. We report the optical properties of silicon thin films with the variation of the deposition parameters.

• Proceedings of the Korean Vacuum Society Conference
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.306.1-306.1
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• 2016

ZnO semiconductor material has been widely utilized in various applications in semiconductor device technology owing to its unique electrical and optical features. It is a promising as solar cell material, because of its low cost, n-type conductivity and wide direct band gap. In this work ZnO/Si heterojunctions were fabricated by using pulsed laser deposition. Vacuum chamber was evacuated to a base pressure of approximately $2{\times}10^{-6}Torr$. ZnO thin films were grown on p-Si (100) substrate at oxygen partial pressure from 5mTorr to 40mTorr. Growth temperature of ZnO thin films was set to 773K. A pulsed (10 Hz) Nd:YAG laser operating at a wavelength of 266 nm was used to produce a plasma plume from an ablated a ZnO target, whose density of laser energy was $10J/cm^2$. Thickness of all the thin films of ZnO was about 300nm. The optical property was characterized by photoluminescence and crystallinity of ZnO was analyzed by X-ray diffraction. For fabrication ZnO/Si heterojunction diodes, indium metal and Al grid patterns were deposited on back and front side of the solar cells by using thermal evaporator, respectively. Finally, current-voltage characteristics of the ZnO/Si structure were studied by using Keithly 2600. Under Air Mass 1.5 Global solar simulator with an irradiation intensity of $100mW/cm^2$, the electrical properties of ZnO/Si heterojunction photovoltaic devices were analyzed.