• 한국진공학회지
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• 제6권2호
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• pp.114-121
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• 1997

투명전도성 산화주석 박막이 펄스레이저증착에 의하여 파이렉스유리 기판상에 제조 되었다. 진공, $O_2$, 및 $Sn(CH_3)_4$분위기에서 Nd-YAG레이저 빛살이 다결정 $SnO_2$ 타겟을 융제 하여 실온에서 기판상에 박막을 증착시키고, 증착된 막을 230, 420, 및 $610^{\circ}C$에서 각각 2시 간 동안 공기중에서 열처리하였다. 박막의 특성이 UV-VIS-NIR 분광법과 X-선 회절법에 의하여 조사되고, 전기적 성질이 촉심식법으로 구해진 막의 두께와 함께 사점탐침법에 의하 여 측정되었다. $Sn(CH_3)_4$이 존재할 때 $SnO_2$상들이 실온에서조차 성장되는 것이 관찰되었다. 이는 레이저 융제 동안 발생된 마이크로플라즈마가 전구물질분자의 분해에 중요한 역할을 함을 시사한다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 하계학술대회 논문집 D
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• pp.1858-1860
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• 1999

To fabricate superconducting multiplexers with narrow pass band characteristics and reduce the physical size of device, we have designed multiplexer using hair-pin type filters with the center frequency of 13.6 GHz. Multiplexers have been fabricated superconductor(HTS), because It has low surface resistance. The $YBa_2Cu_3O_{7-{\delta}}$(YBCO) films were deposited on MgO substrates$(20{\times}20{\times}0.5mm^3)$ by using pulsed laser deposition and conventional photo-lithographic methods were used to pattern the multiplexer. Epitaxial YBCO films were grown on(100) MgO substrates and showed strongly c_axis orientations observed by X-ray diffraction technique. Superconducting transition temperatures were measured to be about 89K. Simulated results of superconducting multiplexer consisting of hair-pin type filters show the insertion loss of about 1.2dB. The measured frequency response will be compared with the simulated results.

• Transactions on Electrical and Electronic Materials
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• 제16권6호
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• pp.334-337
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• 2015

Pure ZnO, ZnO nanowires doped with 3 wt.% Ga (3GZO) and doped with 3 wt.% Ag (3SZO) were grown by a hot-walled pulse laser deposition (HW-PLD) technique. The optical and chemical properties of Ga and Ag doped nanowires was analyzed. Nanowires were determined to be under 200 nm in diameter and several μm in length. Change of significant resistance was observed and the gas detection sensitivities of ZnO, 3GZO and 3SZO nanawires were compared. The sensitivities of ZnO, 3GZO, and 3SZO nanowire sensors were measured at 300℃ for 1 ppm of ethanol gas at 97%, 48%, and 203%, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 춘계학술대회 논문집
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• pp.25-26
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• 2009

We design and demonstrate the controlled morphologies of Ag-dpped ZnO nanowires (NWs) adopting self-contrived hot-walled pulsed laser deposition (HW-PLD). p-type Ag-doping is ensuired by low temperature photoluminescence (PL) spectrum to find the AoX peak at 3.349 eV. Morphology of grown NWs are controlled by changing the kinetic energy and flux of the ablated particles with adjusting the target - substrate (T-S) distance. The analysis on the resultant NWs is presented.

• Journal of Magnetics
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• 제5권4호
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• pp.124-129
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• 2000

$Sm_2Fe_{17}N_x$ film magnets were prepared using a $Sm_2Fe_{17}$ target in a $N_2$ gas atmosphere using a Nd-YAG pulsed laser ablation technique. The effect of nitrogen pressure, deposition temperature, pulse time and film thickness on the structure and magnetic properties of $Sm_2Fe_{17}N_x$ film were studied. Increasing the nitrogen pressure up to 5 atm led to the formation of complete $Sm_2Fe_{17}N_x$ compound. Optimized magnetic properties with the nitrogenation temperature in the range 500-53$0^{\circ}C$ could be obtained by extending the nitrogenation time up to 4 hours. Relatively low coercivities of 400~600 Oe were found in $Sm_2Fe_{17}N_x$films 50~100 m thick, while a $4\piM_s$ of 10$\sim$12 kG could be achieved. In-plane anisotropy, which was the basic goal in this study, was achieved by controlling the nitrogenation parameters.

• 한국산학기술학회논문지
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• 제18권5호
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• pp.475-480
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• 2017

본 논문에서는 레이저 유도증착 공정을 사용하여 절연기판위에 미세패턴의 전도성 향상시켰다. 기존의 레이저 유도증착의 공정에서 발생하는 높은 레이저빔 에너지로 인하여, 미세패턴의 낮은 증착밀도, 산화와 같은 문제점이 있다. 이러한 문제점을 폴리머 코팅층을 사용하여 증착정밀도와 전도성 향상하였다. 실리콘 웨이퍼 위에 미세패턴 증착을 위해서 크롬, 구리를 사용하였다. 본 연구에서는 다중펄스 방식의 레이저 빔을 금속박막에 조사하여 절연기판(insulating substrate: $SiO_2$) 위에 시드 층을 형성하고, 형성된 시드 층위에 무전해 도금을 적용하여 미세패턴 및 구조물을 제작하는 복합공정기술을 개발하였다. 레이저빔의 다중 스캔방식으로 조사함으로서 레이저빔의 에너지가 증착 층의 증착밀도와 표면품위를 향상시키고, 미세전극 패턴으로 사용가능한 전기 전도성을 갖게 되었음 알 수 있었다. 레이저 직접묘화법과 무전해 도금을 적용한 복합공정을 이용하여 미세전극을 증착 한 후 비저항을 측정한 결과 도금 전 저항이 $6.4{\Omega}$, 도금 후의 저항이 $2.6{\Omega}$으로 미세전극 패턴의 표면조직이 균일하고 증착되었다. 표면조직이 균일하고 치밀하게 증착되었기 때문에 전기 전도도가 약 3배정도 향상되었다.

• 한국추진공학회:학술대회논문집
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• 한국추진공학회 2011년도 제36회 춘계학술대회논문집
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• pp.381-384
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• 2011

본 연구에서는 초음속 비행체의 조파저항을 감소시키기 위하여, 최대 주파수 80 kHz의 반복 레이저 펄스에 의해 야기된 에너지 부가법에 관한 실험적 연구가 수행된다. 기류 마하수 1.94의 흡입식 초음속 풍동의 바깥에 설치된 초점렌즈에 의하여 레이저 펄스가 실린더 모델 전단부에 집약된다. 시간변동 항력과 정체압력은 로드셀과 PCB 압력센서에 의해서 측정되며, 동시에 고속 카메라를 이용하여 가시화가 수행된다. 본 연구의 결과로부터, 레이저 펄스 에너지 부가에 의한 항력 저감량은 레이저 펄스 주파수가 증가할 때, 최대 21%까지 거의 선형적으로 증가하였다. 부가 에너지 효율은 레이저 펄스 에너지에만 의존하는 결과를 얻었으며, 최대 1000%까지 달성되었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.297-297
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• 2008

Buffer layers play an important role in the development of high critical current density coated conductor. $LaMnO_3$, $SrTiO_3$ and $BaZrO_3$ buffer layers were compatible with MgO surfaces and also provide a good template for growing high current density REBCO(RE=Rare earth) films. Systematic studies on the influences of pulsed laser deposition parameters (deposition temperature, deposition pressure, processing gas, laser energy density, etc.) on microstructure and texture properties of $LaMnO_3$, $SrTiO_3$ and $BaZrO_3$ films as buffer layer deposited on ion-beam assisted deposition MgO (IBAD_MgO) template by pulse laser deposition method, were carried out. These results will be presented together with the discussion on the possible use of this material in HTS coated conductor as buffer.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.264-266
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• 2005

Manufacture of OLED device used thermal evaporation method. However thermal evaporation method has many defect as thermal damage of substrate, difficult of dopant rate control and low utilization of organic materials. so we suggest PLD(Pulsed Laser Deposition) method that solution of these problems. PLD method has many advantage as without thermal damage, easy indicate of deposition rate per one pulse and good utilization of organic materials. In this paper we apply the PLD method for manufacture of device so we present high efficiency device manufacture using PLD method that has good deposition uniformity, surface rough and deposition rate.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.185-185
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• 2011

ZnTe semiconductor is very attractive materials for optoelectronic devices in the visible green spectral region because of it has direct bandgap of 2.26 eV. The prototypes of ZnTe light emitting diodes (LEDs) have been reported [1], showing that their green emission peak closely matches the most sensitive region of the human eye. Another application to photovoltaics proved that ZnTe is useful for the production of high-efficiency multi-junction solar cells [2,3]. By using the pulse laser deposition system, ZnTe thin films were deposited on ZnO thin layer, which is grown on (0001) Al2O3substrates. To produce the plasma plume from an ablated ZnO and ZnTe target, a pulsed (10 Hz) YGA:Nd laser with energy density of 95 mJ/$cm^2$ and wavelength of 266 nm by a nonlinear fourth harmonic generator was used. The laser spot focused on the surface of the ZnO and ZnTe target by using an optical lens was approximately 1 mm2. The base pressure of the chamber was kept at a pressure around $10^{-6}$ Torr by using a turbo molecular pump. The oxygen gas flow was controlled around 3 sccm by using a mass flow controller system. During the ZnTe deposition, the substrate temperature was $400^{\circ}C$ and the ambient gas pressure was $10^{-2}$ Torr. The structural properties of the samples were analyzed by XRD measurement. The optical properties were investigated by using the photoluminescence spectra obtained with a 325 nm wavelength He-Cd laser. The film surface and carrier concentration were analyzed by an atomic force microscope and Hall measurement system.