• E2M - 전기 전자와 첨단 소재
• /
• 제10권10호
• /
• pp.1056-1062
• /
• 1997

• 전자공학회논문지A
• /
• 제32A권3호
• /
• pp.118-123
• /
• 1995

We have successfully fabricated a super low noise pseudomorphic HEMT(PHEMT) device with AlGaAs/InGaAs/GaAs sturcture by using improved T-Gate which have increased a large gaet cross-sectional area about two times in comparision with those of conventional T-gate processes. The PHEMSTs with 0.15$\mu$m-long and 140$\mu$m-wide gates have eshibited a super low noise characteristics, the noise figure of 0.45dB with associated gain of 10.87dB at 12GHz. The cut-off rewuqncy of the device is 94gHz with a transconductance of 418mS/mm.

• 한국광물학회지
• /
• 제10권2호
• /
• pp.126-138
• /
• 1997

Serpentinite of the Yesan-Gongju-Cheongyang area has been formed by serpentinization of ultramafic rocks. The ultramafic rock might be composed mainly of oilvine with minor pyroxene and amphibole. Olivine has a considerably restricted chemical compositional ranging from Fo90 to Fo93. Fresh serpentinite containing large amount of oilvine is usually massive in occurrence and dark green to black in color. Serpentine minerals occur not only as major mineral of serpentinite, but also as remnants in the talc ore which was formed from serpentinite. XRD study indicates that antigorie is the most abundant serpentine mineral of the serpentinite. Serpentinite consisting of antigorite usually shows non-pseudomorphic texture, whereas that consisting of lizardite shows pseudomorphic texture. Antigorite is found along the margins or fractures of olivine grains resulting in the formation of network of magnetite which was formed at the time of serpentinization. Lizardite, subordinate constituent mineral of serpentinite, frequently shows pseudomorphic mesh-texture after olivine. The chemical differences between antigorite and lizardite/chrysotile are small, so both minerals are not easily discernible with the electron microprobe. Antigorite occuers as elongate blades, flakes, or plates forming interpenetrating texture to obliterate previous textures. SEM study also shows that most serpentine minerals occur in platy or tabular form rather than in asbestiform. Fractures formed after main serpentinization are observed within the pseudomorphic central olivine grain. Careful observation of the serpentine pseudomorphs gives a great deal of data on the pre-serpentinization nature of the serpentine pseudomorphs gives a great deal of data on the pre-serpentinization nature of the ultramafic rocks. It is inferred that the serpentinization took place after the emplacement of ultramafic body into the relatively wet environment ceased and the cooling intrusive body crossed into the stability field of serpentine. It is inferred that the final pervasive serpentinization took place over a long time, by hydrothermal water supplied through the fracture system produced during emplacement of ultramafic rock.

• 한국진공학회지
• /
• 제2권4호
• /
• pp.424-432
• /
• 1993

AlGaAs/InGaAs/GaAs pseudomorphic structures have been grown by atmosheric pressure-MOCVD . The Al incorporation efficiency is constant but slightly exceeds the Ga incorporation during the growth of AlGaAs layers at $650^{\circ}C$ . Meanwhile , the In incorporation efficiency is constant but slightly less than the Ga incorporation in InGAAs layers. InGaAs/GaAs QWs were grown and their optical properties were characterized . $\delta$-doped Al0.24Ga0.76As/In0.16 Ga0.84As p-HEMT structures were successfully grown by MOCVD and their transport properties were characterized by Hall effect and SdH measurements. SdH Measurements at 3.7K show clear magnetoresistance oscillations and plateaus in the quantum Hall effect confirming the existence of a two-dimensional electron gas(2DEG) and a parallel conduction through the GaAs buffer layer. The fabricated $1.5\mu\textrm{m}$gatelength p-HEMTs having p-type GaAs in the buffer layer show a high transconductance of 200 mS/mm and a good pinch-off characteristics.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2001년도 하계학술대회 논문집
• /
• pp.255-258
• /
• 2001

In this paper, DC and small signal characteristics with different physical parameters are expected for p-HEMTs (Pseudomorphic High Electron Mobility Transistors) with different temperatures ranging from 300K to 623K which are widely used for a low noise and/or ultra high frequency device. A device of 0.2$\times$200 ${\mu}{\textrm}{m}$$^2$dimension having very low noise has been chosen to extract the experimental data. Theoretical prediction has been obtained using a simulaor(HELENA) which needs experimental input data extracted from reverse engineering process. From the results, relation between structural parameters and temperature dependency of electrical characteristics are qualitatively explained to use in the design of descrete and integrated circuits to guarantee the optimal operation of the system.

• Applied Microscopy
• /
• 제27권3호
• /
• pp.257-263
• /
• 1997

Microstructural characterizations of II-VI blue laser diodes which consist of quaternary $Zn_{1-x}Mg_xS_ySe_{l-y}$ cladding layer, ternary $ZnS_ySe_{l-y}$ guiding layer and $Zn_{0.8}Cd_{0.2}Se$ quantum well as active layer were carried out using the transmission electron microscope working at 300 kV. Even though the entire structure is pseudomorphic to GaAs substrate, the structure had contained numerous extended stacking faults and dislocations which had created at ZnSe/GaAs interfaces and then further grown to the top of the epilayers. These faults might be expected to cause the degradation and shortening the lifetime of laser devices.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 1996년도 제10회 학술발표회 논문개요집
• /
• pp.26-27
• /
• 1996

• JSTS:Journal of Semiconductor Technology and Science
• /
• 제3권3호
• /
• pp.145-152
• /
• 2003

Electrical gate and drain characteristics of double heterostructure InAlAs/InGaAs pseudomorphic HEMTs have been investigated under sub-bandgap photonic excitation ($hv). Drain $(V_{DS})-,{\;}gate($V_{DS})-$, and optical power($P_{opt}$)-dependent variation of the abnormal gate leakage current and associated physical mechanisms in the PHEMTs have been characterized. Peak gate voltage ($V_{GS,P}$) and the onset voltage for the impact ionization ($V_{GS.II}$) have been extracted and empirical model for their dependence on the $V_{DS}$ and $P_{opt} have been proposed. Anomalous gate and drain current, both under dark and under sub-bandgap photonic excitation, have been modeled as a parallel connection of high performance PHEMT with a poor satellite FET as a parasitic channel. Sub-bandgap photonic characterization, as a function of the optical power with $h\nu=0.799eV$, has been comparatively combined with those under dark condition for characterizing the bell-shaped negative humps in the gate current and subthreshold drain leakage under a large drain bias.

• ETRI Journal
• /
• 제18권3호
• /
• pp.171-179
• /
• 1996

Fully passivated low noise AlGaAs/InGaAs/GaAs pseudomorphic (PM) HEMT with wide head T-shaped gates were fabricated by dose split electron beam lithography (DSL). The dimensions of gate head and footprint were optimized by controlling the splitted pattern size, dose, and spaces of each pattern. We obtained stable T-shaped gate of $0.15{\mu}m$ gate length with $1.35{\mu}m-wide$ head. The maximum extrinsic transconductance was 560 mS/mm. The minimum noise figure measured at 18 GHz at $V_{ds}=2V andI_{ds}=17mA$ was 0.41 dB with associated gain of 8.19 dB. At 12 GHz, the minimum noise figure and an associated gain were 0.26 and 10.25 dB, respectively. These noise figures are the lowest values ever reported for GaAs-based HEMTs. These results are attributed to the extremely low gate resistance of wide head T-shaped gate having a ratio of the head to footprint dimensions larger than 9.

• 한국통신학회논문지
• /
• 제36권10A호
• /
• pp.847-851
• /
• 2011

본 논문에서는 밀리미터파 응용에서 사용 가능한 우수한 성능의 MMIC (Millimeter-wave Monolithic Integrated Circuit) star 혼합기를 구현하였다. MMIC star 혼합기를 구현하기 위하여 PHEMT (pseudomorphic high electron mobility transistor) 공정 기반의 소오스와 드레인 단자를 연결한 쇼트키 (Schottky) 다이오드를 사용하였다. 혼합기의 측정 결과 LO 주파수가 75 GHz이며 전력이 10 dBm 인 경우, 81 GHz에서 86 GHz의 RF 주파수 범위에서 평균 13 dB의 변환손실 특성을 얻었다. RF-LO 격리도 특성은 30 dB 이상의 결과를 얻었으며 약 4 dBm의 P1 dB 특성을 얻었다. 전체 칩의 크기는 0.8 mm ${\times}$ 0.8 mm이다.