• 대한전기학회논문지:시스템및제어부문D
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• 제54권3호
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• pp.180-185
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• 2005

Microstrip antennas generally have a lot of advantages that are thin profile, lightweight, low cost, and conformability to a shaped surface application with integrated circuitry. In addition to military applications, they have become attractive candidates in a variety of commercial applications such as mobile satellite communications, the direct broadcast system (DBS), global positioning system (GPS), and remote sensing. Recently, many of the researches have been achieved for improving the impedance bandwidth of microstrip antennas. The basic form of the microstrip antenna, consisting of a conducting patch printed on a grounded substrate, has an impedance bandwidth of $1\~2\%$. For improvement of narrow bandwidth of microstrip patch, we were designed U-slot microstrip patch antenna in this paper. This antenna had wide bandwidth for all personal communication services (PCS) and IMT-2000. For the design of U-slot microstrip patch antenna using a finite difference time domain(FDTD) method. This numerical method could get the frequency property of U-slot patch antenna and the electromagnetic fields of slots.

• 한국염색가공학회:학술대회논문집
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• 한국염색가공학회 2008년도 제39차 학술발표회
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• pp.143-144
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• 2008

We developed that the film fibers which was vacuum-metalized silver on the PET film played a part increasing durable on the alkali, antibiotic and another functional property. For this usage, PET film fibers with fine denier vacuum-metalized silver manufactured through changing the micro slitting machine's drive process.

• 한국국방경영분석학회지
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• 제18권2호
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• pp.56-65
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• 1992

In the existing deterministic network, the capacity of each arc has been assumed to have a determined property. In reality it may have a property which cannot be determined, and even if it is determined, it contains many errors. Fuzzy theory is efficient in dealing with these kinds of properties. The object of this study is to show that the capacity of each arc and the goal quantity have fuzziness and to develop a new method of determining the fuzzy maximal flow quantity.

• Korean Journal of Mathematics
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• 제32권1호
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• pp.73-82
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• 2024

The purpose of this paper is to introduce a new subclass of strongly meromorphic close-to-convex functions by subordinating to generalized Janowski function. We investigate several properties for this class such as coefficient estimates, inclusion relationship, distortion property, argument property and radius of meromorphic convexity. Various earlier known results follow as particular cases.

• 한국광물학회지
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• 제18권3호
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• pp.183-194
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• 2005

일본의 묘기 광상에서 산출되는 벤토나이트를 대상하여 광물학적, 물리화학적 성질 및 열적성질을 측정하였으며, 이 연구의 주목적은 악틴족 원소인 U, Th과 란탄족 원소인 Ce, Eu에 대해 천연산 Na-형 벤토나이트의 흡착특성을 파악하기 위함이다 묘기 벤토나이트는 pH 10.4 정도로 높은 알카리성을 나타낸다. 또한 높은 점도, 팽윤도, CEC 값을 나타내고, 수용액과의 반응에서 짧은 시간에 안정화되어 균질한 상태를 유지하였다. 화학성분 분석결과 $Na_2O$가 CaO에 비해 상대적으로 높은 함량비를 보이는 것으로 보아 묘기 벤토나이트를 구성하는 스멕타이트는 Na-형에 속한다. 열분석 결과 벤토나이트의 전암시료와 점토입자 이하 시료는 각각 $591^{\circ}C$와 $658^{\circ}C$에서 분해됨이 확인되었다. 점토입자 시료 0.2g을 U. Th, Ce그리고 Eu의 각 여러 농도별, pH별 용액 20mL와 반응시킨 흡착실험을 행하였다. 그 결과, 농도 및 pH변화에 따른 흡착량의 변화는 Ce, Th과 Eu용액의 경우 비교적 일정한 흡착량의 감소를 보이나, U용액은 농도가 높아질수록, pH가 증가될수록 급격한 흡착량의 감소를 나타내었다. 흡착능력은 Ce, Th, Eu, U 순으로 나타난다. 벤토나이트의 Ce, Eu, Th, U 흡착은 스멕타이트의 양이온교환반응과 표면흡착반응 이외에도 수용액에 존재하는 이온들이 다양한 화학종의 형성과 침전물 형성이 흡착에 큰 영향을 끼치는 것으로 판단된다. 또한 수반되는 제올라이트가 이들 원소들의 흡착에 영향을 끼쳤을 것이다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.181-184
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• 2001

Chemical Mechanical Polishing(CMP) of Shallow Trench Isolation(STD structure in 0.18 m semiconductor device fabrication is studied. CMP process is applied for the STI structure with and without reverse moat pattern and End Point Detection (EPD) method is tested. To optimize the transistor properties related metal 1 parameters. we studied the correlation between CMP thickness of STI using high selectivity slurry. DOE of gate etch recipe, and 1st metal DC values. Remaining thickness of STI CMP is proportional to the thickness of gate-etch process and this can affect to gate profile. As CMP thickness increased. the N-poly foot is deteriorated. and the P-Poly Noth is getting better. If CD (Critical Dimension) value is fixed at some point,, all IDSN/P values are in inverse proportional to CMP thickness by reason of so called Profile Effect. Weve found out this phenomenon in all around DOE conditions of Gate etch process and we also could understand that it would not have any correlation effects between VT and CMP thickness in the range of POE 120 sec conditions. As CMP thickness increased by $100\AA$. 3.2 $u\AA$ of IDSN is getting better in base 1 condition. In POE 50% condition. 1.7 $u\AA$ is improved. and 0.7 $u\AA$ is improved in step 2 condition. Wed like to set the control target of CD (critical dimension) in gate etch process which can affect Idsat, VT property versus STI topology decided by CMP thickness. We also would like to decide optimized thickness target of STI CMP throughout property comparison between conventional STI CMP with reverse moat process and newly introduced STI CMP using high selectivity slurry. And we studied the process conditions to reduce Gate Profile Skew of which source known as STI topology by evaluation of gate etch recipe versus STI CMP thickness.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.181-184
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• 2001

Chemical Mechanical Polishing(CMP) of Shallow Trench Isolation(STI) structure in 0.18 m semiconductor device fabrication is studied. CMP process is applied for the STI structure with and without reverse moat pattern and End Point Detection (EPD) method is tested. To optimize the transistor properties related metal 1 parameters, we studied the correlation between CMP thickness of STI using high selectivity slurry, DOE of gate etch recipe, and 1st metal DC values. Remaining thickness of STI CMP is proportional to the thickness of gate-etch process and this can affect to gate profile. As CMP thickness increased, the N-poly foot is deteriorated, and the P-Poly Noth is getting better. If CD (Critical Dimension) value is fixed at some point, all IDSN/P values are in inverse proportional to CMP thickness by reason of so called Profile Effect. Weve found out this phenomenon in all around DOE conditions of Gate etch process and we also could understand that it would not have any correlation effects between VT and CMP thickness in the range of POE 120 sec conditions. As CMP thickness increased by 100 ${\AA}$, 3.2 u${\AA}$ of IDSN is getting better in base 1 condition. In POE 50% condition, 1.7 u${\AA}$ is improved, and 0.7 u${\AA}$ is improved in step 2 condition. Wed like to set the control target of CD (critical dimension) in gate etch process which can affect Idsat, VT property versus STI topology decided by CMP thickness. We also would like to decide optimized thickness target of STI CMP throughout property comparison between conventional STI CMP with reverse moat process and newly introduced STI CMP using high selectivity slurry. And we studied the process conditions to reduce Gate Profile Skew of which source known as STI topology by evaluation of gate etch recipe versus STI CMP thickness.

• Nuclear Engineering and Technology
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• 제56권5호
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• pp.1854-1862
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• 2024

This study aims to investigate the strain-dependent-deformation property of Gyeongju bentonite buffer material. A series of unconfined compressive tests were performed with cylindrical specimens prepared at varying dry densities (𝜌_d = 1.58 g/cm³ to 1.74 g/cm³) using cold isostatic pressing technique. It is found that as 𝜌_d increase, the unconfined compressive strength (q_u), failure strain, and elastic modulus (E) of Gyeongju compacted bentonite (GCB) increases. Normalized elastic modulus (E_sec/E_max) degradation curves of GCB specimens are fitted using Ramberg-Osgood model and the elastic threshold strain (𝜀_e,th) is determined through the fitted curves. The strain-dependency of E and Poisson's ratio (v) of GCB were observed. E and v were measured constant below 𝜀_e,th of 0.14 %. Then, E decreases while v increases after exceeding the strain threshold. The E_sec/E_max degradation curves of GCB in this study suggests wider linear range and higher linearity than those of sedimentary clay in previous study. On top of that, the influence of 𝜌_d is observed on E_sec/E_max degradation curves of GCB, showing a slight increase in 𝜀_e,th with increase in 𝜌_d. Furthermore, an empirical model of q_u with 𝜌_d and a correlation model between q_u and E are proposed for Gyeongju bentonite buffer materials.

• 한국도로학회논문집
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• 제16권2호
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• pp.119-129
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• 2014

PURPOSES : The purpose of this study is to develop the U-turn accident model at 4-legged signalized intersections in urban areas. METHODS : In order to analyze the characteristics of the accidents which are associated with U-turn operation at 4-legged signalized intersections in urban areas and develop an U-turn accident model by regression analysis, the tests of overdispersion and zero-inflation are conducted about the dependent variables of number of accidents and EPDO (Equivalent Property Damage Only). RESULTS : As their results, the Poisson model fits best for number of accident and the ZIP (Zero Inflated Poisson) fits best for EPOD, the variables of conflict traffic, width of opposing road, traffic passing speed are adopted as independent variable for both models. The variables of number of bus berths and rate of U-turn signal time at which the U-turn is permitted are adopted as independent variable only for EPDO. CONCLUSIONS : These study results suggest that U-turn would be permitted at the intersection where the width of opposing road is wider than 11.9 meters, the passing vehicle speed is not high and U-turn operation is not hindered by the buses stopping at bus stops.

• International Journal of Control, Automation, and Systems
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• 제6권4호
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• pp.571-582
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• 2008

This paper analyzes global convergence of the univariate dynamic encoding algorithm for searches (uDEAS) and provides an application result to function optimization. uDEAS is a more advanced optimization method than its predecessor in terms of the number of neighborhood points. This improvement should be validated through mathematical analysis for further research and application. Since uDEAS can be categorized into the generating set search method also established recently, the global convergence property of uDEAS is proved in the context of the direct search method. To show the strong performance of uDEAS, the global minima of four 30 dimensional benchmark functions are attempted to be located by uDEAS and the other direct search methods. The proof of global convergence and the successful optimization result guarantee that uDEAS is a reliable and effective global optimization method.