• Journal of the Korean Society for Heat Treatment
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• v.13 no.5
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• pp.303-308
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• 2000

The ring gears of automobile parts are manufactured generally process chart of which is as follows : forging ${\rightarrow}$ annealing or normalizing ${\rightarrow}$ rough machining ${\rightarrow}$ hardening(Quenching-Tempering or carburizing process) ${\rightarrow}$ finish machining. Isothermal annealing process after forging is most effective in the side of improvment of machinability. On this study we selected two kinds of steel;SCM415, SCM435 of most universal and investigated microstructures to find out most suitable condition of heat treatment in proportion continuous cooling and isothermal annealing. As the cooling rate is $5^{\circ}C$ per minute in continuous cooling process, martensite and bainite are coexisted with ferrite and pearlite in SCM435 steel. If the cooling rate is slower than $5^{\circ}C$ per minute, microstructure were only ferrite and pearlite but formation of band structure can't be avoid. On the other hand, microstructure is only ferrite and pearlite regardless of cooling rate because carbon content of SCM415 steel is low. Moreover formation of band structure isn't exposed by faster cooling rate. Most optimal temperature of the isothermal annealing is from $650^{\circ}C$ to $680^{\circ}C$ in SCM435 steel. When holding time is 60 minute with $650^{\circ}C$, the identical ferrite and pearlite microstructures can be obtained.

• International journal of advanced smart convergence
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• v.4 no.1
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• pp.11-17
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• 2015

Fouling in heat exchanger becomes a major problem of dairy industry and it increases the production cost. These are lost productivity, additional energy, additional equipment, chemical, manpower, and environmental impact. Fouling also introduces the risk of food safety due to the improper heating temperature which allow the survival of pathogenic bacteria in milk, introducing biofilm formation of pathogenic bacteria in equipments and spreading the pathogenic bacteria to milk. The aim of this study is to determine the fouling rate during pasteurization process in heat exchanger of pasteurized milk produced by Village Cooperative Society (KUD) "X" in Malang, East Java Indonesia by using empirical modeling. The fouling rate is found as $0.3945^{\circ}C/h$ with the heating process time ranged from 0 to 2 hours and temperature difference (hot water inlet temperature and milk outlet temperature) ranged from 0.654 to $1.636^{\circ}C$. The fouling rate depends on type and characteristics of heat exchangers, time and temperature of process, milk type, age of milk, seasonal variations, the presence of microorganism and more. This results will be used to plan Cleaning In Place (CIP) and to design the control system of pasteurization process in order to maintain the milk outlet temperature as standard of pasteurization.

• Current Photovoltaic Research
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• v.8 no.1
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• pp.17-26
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• 2020

It is clear that monocrystalline Silicon (Si) ingots are the key raw material for semiconductors devices. In the present industries markets, most of monocrystalline Silicon (Si) ingots are made by Czochralski Process due to their advantages with low production cost and the big crystal diameters in comparison with other manufacturing process such as Float-Zone technique. However, the disadvantage of Czochralski Process is the presence of impurities such as oxygen or carbon from the quartz and graphite crucible which later will resulted in defects and then lowering the efficiency of Si wafer. The heat transfer plays an important role in the formation of Si ingots. However, the heat transfer generates convection in Si molten state which induces the defects in Si crystal. In this study, a crystal growth simulation software was used to optimize the Si crystal growth process. The furnace and system design were modified. The results showed the melt-crystal interface shape can affect the Si crystal growth rate and defect points. In this study, the defect points and desired interface shape were controlled by specific crystal growth rate condition.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.51 no.1
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• pp.15-21
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• 2002

We investigated effects of electrical, physical, and chemical parameters on energy transfer, NO conversion, and light emission in the dielectric barrier discharge (DBD) process. As gap distance between electrodes increased, discharge onset voltage increased. However, as gap distance between electrodes increased, electric field which initiates discharge showed approximately the same value, 30kV/cm. The discharge onset voltage of the coarse surface electrode was lower than that of the smooth surface electrode. And, energy transfer was slightly enhanced in the coarse electrode condition. However, NO conversion rate decreased with the coarse surface electrode because more uniform discharge can be obtained on the smooth surface electrode. The NO conversion rate increased with decreasing the initial concentration, so the DBD process is more feasible in the lower concentration condition. The variation of gas residence time tested at the same energy density in the experiment did not affect on the NO conversion. The result shows that the NO conversion rate mainly depends on the energy density. The DBD process is able to adjust on plasma-photocatalyst process because it emits the short wavelength light in the range of ultraviolet. The intensity of light emission increased with the increase of the energy transfer to the reactor and the gas flow rate.

• Korean Journal of Materials Research
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• v.15 no.6
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• pp.426-430
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• 2005

Chemical mechanical polishing (CMP) is an essential process in the production of integrated circuits containing copper interconnects. The effect of alanine in reactive slurries representative of those that might be used in copper CMP was studied with the aim of improving selectivity between copper(Cu) film and tantalum-nitride(TaN) film. We investigated the pH effect of nano-colloidal silica slurry containing alanine through the chemical mechanical polishing test for the 8(inch) blanket wafers as deposited Cu and TaN film, respectively. The copper and tantalum-nitride removal rate decreased with the increase of pH and reaches the neutral at pH 7, then, with the further increase of pH to alkaline, the removal rate rise to increase soddenly. It was found that alkaline slurry has a higher removal rate than acidic and neutral slurries for copper film, but the removal rate of tantalum-nitride does not change much. These tests indicated that alanine may improve the CMP process by controlling the selectivity between Cu and TaN film.

• JSTS:Journal of Semiconductor Technology and Science
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• v.8 no.3
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• pp.244-250
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• 2008

An inductively coupled plasma etching process to replace an existing slower rate reactive ion etching process for $60{\mu}m$ diameter via-holes using Cl2/BCl3 gases has been investigated. Process pressure and platen power were varied at a constant ICP coil power to reproduce the RIE etched $200{\mu}m$ deep via profile, at high etch rate. Desired etch profile was obtained at 40 m Torr pressure, 950 W coil power, 90W platen power with an etch rate ${\sim}4{\mu}m$/min and via etch yield >90% over a 3-inch wafer, using $24{\mu}m$ thick photoresist mask. The etch uniformity and reproducibility obtained for the process were better than 4%. The metallized via-hole dc resistance measured was ${\sim}0.5{\Omega}$ and via inductance value measured was $\sim$83 pH.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1384-1385
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• 2006

Platinum is a candidate of top and bottom electrode in ferroelectric random access memory and dynamic random access memory. High dielectric materials and ferroelectric materials were generally patterned by plasma etching, however, the low etch rate and low etching profile were repoted. We proposed the damascene process of high dielectric materials and ferroelectric materials for patterning process through the chemical mechanical polishing process. At this time, platinum as a top electrode was used for the stopper for the end-point detection as Igarashi model. Therefore, the control of removal rate in platinum chemical mechanical polishing process was required. In this study, an addition of $H_{2}O_{2}$ oxidizer to alumina slurry could control the removal rate of platinum. The removal rate of platinum rapidly increased with an addition of 10wt% $H_{2}O_{2}$ oxidizer from 24.81nm/min to 113.59nm/min. Within-wafer non-uniformity of platinum after chemical mechanical polishing process was 9.93% with an addition of 5wt% $H_{2}O_{2}$ oxidizer.

• Journal of the Korean Wood Science and Technology
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• v.41 no.5
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• pp.456-465
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• 2013

Log cross sections of yellow poplar were dried in a radio frequency vacuum (RFV) dryer under alternating vacuum and release (AVR) process. The average moisture content (MC), temperature and vapor pressure at the volumetric center were monitored as functions of time. Three different log thicknesses (33, 60 and 75mm) were tested. The results show that the AVR process caused an increase in the drying rate when the moisture content was above fiber saturation point (FSP, about 30% MC) but that it had an inverse effect on the drying rate when the MC was below FSP. The effect of the AVR process on the drying rate decreased, and the severity of heart checks increased, with the increase in the thickness of the specimens.

• Transactions of Materials Processing
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• v.31 no.1
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• pp.29-38
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• 2022

Recently, the composite material market is gradually growing. Various composite forming processes have been developed in order to reduce the production cost of the composite material. Unlike the conventional forming process, the microwave composite forming process has the advantage of reducing the processing time because the composite material is heated directly or indirectly at the same time. Due to this advantage, in this study, a double cantilever beam test was conducted with specimens manufactured by the microwave composite forming process. The purpose of this study was to compare mode-I energy release rate for specimens manufactured by prepreg compression forming and microwave composite forming processes. First, a microwave oven was proposed to conduct the microwave composite forming process. Double cantilever beam specimens were manufactured. After that, the double cantilever beam test was conducted to obtain the mode-I energy release rate. Mode-I energy release rates of specimens manufactured by the microwave composite forming and prepreg compression forming processes were then compared. As a result, mode-I energy release rates of specimens fabricated by the microwave composite forming process were similar to those fabricated with the prepreg compression forming process with a relatively reduced process time.

• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.10 no.4
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• pp.456-465
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• 1998

Effect of a non-absorbable gas on the absorption process in a vertical tube absorber was investigated numerically. The water vapor mined with air as the non-absorbable gas is absorbed into LiBr/water solution film. The flow is assumed to be laminar and fully developed in both liquid and gas phases. The diffusion and energy equations were solved in both phases to give the temperature and concentrations, from which heat and mass fluxes were determined. It was shown that the local absorption rate decreases as the mass fraction of air in water vapor increases. The vapor pressure of water at the liquid-vapor interface reduces significantly since the non-absorbable gas is accumulated near the interface. The effect of non-absorbable gases on absorption rate becomes larger as the mass flow rate of the vapor decreases. For small amount of non-absorbable gases the total absorption rate of water vapor increases as the mass flow rate of the vapor decreases. Total absorption rate increases as the mass flow rate of the vapor increases for large concentration of non-absorbables at the inlet of an absorber.