• 한국수소및신에너지학회논문집
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• 제19권5호
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• pp.386-393
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• 2008

The Sulfur-iodine(SI) thermochemical cycle is one of the most promising methods for massive hydrogen production. For the purpose of continuous operation of SI cycle, phase separation characteristics into two liquid phases ($H_2SO_4$-rich phase and $HI_x$-rich phase) were directly investigated via Bunsen reaction. The experiments for Bunsen reaction were carried out in the temperature range, from 298 to 333 K, and in the $I_2/H_2O$ molar ratio of $0.109{\sim}0.297$ under a continuous flow of $SO_2$ gas. As the results, solubility of $SO_2$, decreased with increasing the temperature, had considerable influence on the global composition in the Bunsen reaction system. The amounts of impurity in each phase(HI and $I_2$ in $H_2SO_4$-rich phase and $H_2SO_4$ in $HI_x$-rich phase) were decreased with increasing $H_2SO_4$ molar ratio and temperature. To control the amounts of impurity in $HI_x$-rich phase, temperature is a factor more important than $I_2/H2_O$ molar ratio. On the other hand, the affinity between $HI_x$ and $H_2O$ was increased with increasing $I_2/H2_O$molar ratio.

• 한국재료학회지
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• 제22권11호
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• pp.575-580
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• 2012

The purpose of this study is to investigate the crystalline structure and optical properties of (GaZn)(NO) powders prepared by solid-state reaction between GaOOH and ZnO mixture under $NH_3$ gas flow. While ammoniation of the GaOOH and ZnO mixture successfully produces the single phase of (GaZn)(NO) solid solution within a GaOOH rich composition of under 50 mol% of ZnO content, this process also produces a powder with coexisting (GaZn)(NO) and ZnO in a ZnO rich composition over 50 mol%. The GaOOH in the starting material was phase-transformed to ${\alpha}$-, ${\beta}-Ga_2O_3$ in the $NH_3$ environment; it was then reacted with ZnO to produce $ZnGa_2O_4$. Finally, the exchange reaction between nitrogen and oxygen atoms at the $ZnGa_2O_4$ powder surface forms a (GaZn)(NO) solid solution. Photoluminescence spectra from the (GaZn)(NO) solid solution consisted of oxygen-related red-emission bands and yellow-, green- and blue-emission bands from the Zn acceptor energy levels in the energy bandgap of the (GaZn)(NO) solid solutions.

• 한국재료학회지
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• 제23권1호
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• pp.24-30
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• 2013

Today, the modification of carbon foam for high performance remains a major issue in the environment and energy industries. One promising way to solve this problem is the optimization of the pore structure for desired properties as well as for efficient performance. In this study, using a sol-gel process followed by carbonization in an inert atmosphere, hollow spherical carbon foam was prepared using resorcinol and formaldehyde precursors catalyzed by 4-aminobenzoic acid; the effect of carbonization temperature and re-immersion treatment on the pore structure and characteristics of the hollow spherical carbon foam was investigated. As the carbonization temperature increased, the porosity and average pore diameter were found to decrease but the compression strength and electrical conductivity dramatically increased in the temperature range of this study ($700^{\circ}C$ to $850^{\circ}C$). The significant differences of X-ray diffraction patterns obtained from the carbon foams carbonized under different temperatures implied that the degree of crystallinity greatly affects the characteristics of the carbon form. Also, the number of re-impregnations of carbon form in the resorcinol-formaldehyde resin was varied from 1 to 10 times, followed by re-carbonization at $800^{\circ}C$ for 2 hours under argon gas flow. As the number of re-immersion treatments increased, the porosity decreased while the compression strength improved by about four times when re-impregnation was repeated 10 times. These results imply the possibility of customizing the characteristics of carbon foam by controlling the carbonization and re-immersion conditions.

• 대한화학회지
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• 제13권1호
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• pp.49-55
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• 1969

螢光X線을 利用하여 珪酸鹽鑛物中의 主成分인 $SiO_2$, $Al_2O_3$, $Fe_2O_3$, CaO, MgO 및 $K_2O$를 迅速히 分析할 目的으로 試料의 處理 測定 및 各條件에 對하여 檢討하였다. 試料를 Lithium Tetraborate로 용융하여 300Mesh 以上의 微粉末로 한後 40,000Lb의 壓力으로 成型하여 Tungsten과 Chromium 對陰極의 X-線管과 LiF, EDDT, ADP의 分光結晶을 使用하여 測定하였다. 各成分에 對한 檢量曲線은 Matrix Effect를 고려하여 N.B.S 및 International Rock Standard를 選定 使用하였고 Lanthanum Oxide 및 Binder로서 Borie Acid를 첨가하여 얻었다. 各成分에 對하여 本法의 再現性 및 誤差를 檢討하기를 爲하여 I.R.S T-1을 使用하여 測定한 結果 0.47($SiO_2$), 0.85($Al_2O_3$), 0.05($Fe_2O_3$), 0.07(caO), 0.02($K_2O$), 0.13(MgO)의 標準偏差를 얻었다. 또한 化學分析植에 對한 偏差를 求하고져 Clay, Kaoline, Alunite, Wallastonite 및 Zeolite 等의 珪酸鹽鑛物을 選定하여 化學分析 및 本法에 依한 分析結果를 비교하였다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2000년도 하계학술대회 논문집 C
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• pp.1491-1493
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• 2000

Continuing improvement of microprocessor performance involves in the device size. This allow greater device speed, an increase in device packing density, and an increase in the number of functions that can reside on a single chip. However this has led to propagation delay, crosstalk noise, and power dissipation due to resistance-capacitance(RC) coupling become significant due to increased wiring capacitance, especially interline capacitance between the metal lines on the same metal level. So, MSSQ which has the permittivity between 2.5-3.2 is used to prevent from these problems. For pattering MSSQ(Methylsilsequioxane), we use RIE(Reactive Ion Etching) and MERIE(Magnetically enhanced Reactive Ion Etching) which could provide good anisotropic etching. In this study, we optimized the flow rate of $CF_{4}/O_2$ gas, RF power to obtain the best etching rate and roughness and also analyzed the etching result using $\alpha$-step profilemeter, SEM, infrared spectrum and AFM.

• 한국전기전자재료학회논문지
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• 제29권3호
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• pp.168-174
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• 2016

A conductive oxide-based sapphire glass indium tin oxide/metal electrode and the optical coating, through patterning process was studied in excellent optical properties and integrated touch panel has a high strength. Indium tin oxide conductive oxides of the sapphire glass to 0.3 A at DC magnetron sputtering method of 10 min, gas flow Ar 10 Sccm Ar, $O_2$ 1.0 Sccm the formation conditions of the thin film after annealing at $550^{\circ}C$ for 30min was achieved through a 86% transmittance. In addition, the coating 130 nm hollow silica sol-gel was to improve the optical transmittance of the indium tin oxide to 91%. For the measurement by the modeling hollow silica sol by Macleod simulation and calculated the average values of silica part to the presence or absence in analogy to actual. Refractive index value and the actual value of the material on the simulation the transmittance difference is it does not completely match the air region similar to the actual value (transmission) could be confirmed that the measurement is set to a value of between 5 nm and 10 nm.

• 반도체디스플레이기술학회지
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• 제12권3호
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• pp.19-22
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• 2013

The purpose of this study is to develop a system that can monitor the amounts of energy consumption during CVD and etching process for semiconductor manufacturing. Specifically, this system is designed to measure the $CO_2$ emission amounts quantitatively by measuring the flow rate of gas used and amount of power consumed during the processes. The processes of CVD equipment can be classified generally into processing step and cleaning step and all the two steps were monitored. In CVD and etcher equipments, various gases including Ar and $O_2$ are used, but Ar, $O_2$ and He were monitored with the use of the LCI data of Korea Environmental Industry & Technology Institute and carbon emission coefficients of EcoInvent. As a result, it was found that the carbon emission amounts of CVD equipment for Ar, $O_2$ and He were $0.030kgCO_2/min$, $4.580{\times}10^{-3}kgCO_2/min$ and $6.817{\times}10^{-4}kgCO_2/min$, respectively and those of etcher equipment for Ar and $O_2$ are $5.111{\times}10^{-3}kgCO_2/min$ and $7.172kgCO_2/min$, respectively.

• 조명전기설비학회논문지
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• 제13권4호
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• pp.32-37
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• 1999

본 연구에서는 연소공정에서 발생하는 NOx를 제거하기 위해 연면방전과 AC Corona 방전을 중첩해서 특수설계 제작된 중첩방전 반응기의 방전분해 특성을 연구하였다. 실험은 SPCP, Corona Discharge 및 중첩방전에 대한 NOx의 분해율을 비교 측정하였다. 실험변수는 방전형태, 가스의 농도, 방전주파수, 가스의 유량 등에 대하여 측정하였다. 실험결과 중첩방전에 의한 NOx의 분해율은 SPCP방전고 Corona방전에 의한 분해율보다 10∼15[%] 증가하였고 소모전력도 10[%] 정도 작게 소모되었다. 중첩방전시 상부전극의 주파수의 영향은 주파수가 작을수록 NOx의 분해율이 높았고 하부전극의 SPCP만의 방전시에는 주파수가 높을수록 NOx의 분해율이 증가하였다. 방전형태에 대한 NOx의 최대분해율은 SPCP일 때 방전전력 18[W]에서 80[%] 이었고 AC코로나 방전일 때 방전전력 805[W]에서 10[%] 이었으나 중첩방전의 경우는 14[W]에서 90[%]로 중첩방전의 효과는 10[%]이상 증가하였다.

• 식품보건융합연구
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• 제6권5호
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• pp.19-25
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• 2020

The purpose of this study was to research and develop a step-type chemical liquid deodorizer including a liquid catalyst that can prevent civil complaints due to odor due to its excellent deodorizing performance. The main composition of chemical liquid deodorizer including liquid catalyst is cleaning deodorization, catalyst deodorization, chemical deodorization, water film plate, deodorization water circulation device, deodorization water injection device, catalyst management system, gas-liquid separation device, chemical supply device, deodorizer control panel, etc. It consists of a device. The air flow of the step-type liquid catalyst chemical liquid deodorizer is a technology that firstly removes basic odor substances, and the liquid catalyst installed in the subsequent process stably removes sulfur compounds, which are acidic odor substances, to discharge clean air. The efficiency of treating the complex odor of the prototype was 98.5% for the first and 99.6% for the second, achieving the target of 95%. The hydrogen sulfide treatment efficiency of the prototype was 100% for the first and 99.9% for the second, which achieved 95%, which was the target of the project. As a result, ammonia was removed by the reaction of ammonia and hydrogen sulfide.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 제37회 하계학술대회 논문집 C
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• pp.1438-1439
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• 2006

$Ge_{2}Sb_{2}Te_5$(GST) thin film at present is a promising candidate for a phase change random access memory (PCRAM) based on the difference in resistivity between the crystalline and amorphous phase. PCRAM is an easy to manufacture, low cost storage technology with a high storage density. Therefore today several major chip in manufacturers are investigating this data storage technique. Recently, A. Pirovano et al. showed that PCRAM can be safely scaled down to the 65 nm technology node. G. T Jeonget al. suggested that physical limit of PRAM scaling will be around 10 nm node. Etching process of GST thin ra films below 100 nm range becomes more challenging. However, not much information is available in this area. In this work, we report on a parametric study of ICP etching of GST thin films in $Cl_2$/Ar chemistry. The etching characteristics of $Ge_{2}Sb_{2}Te_5$ thin films were investigated using an inductively coupled plasma (ICP) of $Cl_2$/Ar gas mixture. The etch rate of the GST films increased with increasing $Cl_2$ flow rate, source and bias powers, and pressure. The selectivity of GST over the $SiO_2$ films was higher than 10:1. X-ray photoelectron spectroscopy(XPS) was performed to examine the chemical species present in the etched surface of GST thin films. XPS results showed that the etch rate-determining element among the Ge, Sb, and Te was Te in the $Cl_2$/Ar plasma.