• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2006.05a
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• pp.109-112
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• 2006

A fluorine-doped diamond-like carbon (F-DLC) stamp which has high contact angle, high UV-transmittance and sufficient hardness, was fabricated using the following direct etching method: F-DLC is deposited on a quartz substrate using DC and RF magnetron sputtering, PMMA is spin coated and patterned using e-beam lithography and finally, $O_2$ plasma etching is performed to transfer the line patterns having 100 nm line width, 100 nm line space and 70 nm line depth on F-DLC. The optimum fluorine concentration was determined after performing several pre-experiments. The stamp was applied successfully to UV-NIL without being coated with an anti-adhesion layer.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2006.05a
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• pp.145-146
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• 2006

A fluorine-doped diamond-like carbon (F-DLC) stamp which has high contact angle, high UV-transmittance and sufficient hardness, was fabricated using the following direct etching method: F-DLC is deposited on a quartz substrate using DC and RF magnetron sputtering, PMMA is spin coated and patterned using e-beam lithography and finally, O2 plasma etching is performed to transfer the line patterns having 100 nm line width, 100 nm line space and 70 nm line depth on F-DLC. The optimum fluorine concentration was determined after performing several pre-experiments. The stamp was applied successfully to UV-NIL without being coated with an anti-adhesion layer.

• Proceedings of the KIEE Conference
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• 2006.10a
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• pp.38-39
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• 2006

We present experimental results that regard the effects of catalyst preparation on the structural and field-emissive properties of CNTs. The CNTs used in this research have been synthesized using the inductively coupled plasma-chemical vapor deposition (ICP-CVD) method. Catalyst materials (such as Ni, Co, and Invar 426) are varied and deposited on buffer films by RF magnetron sputtering. Prior to growth of CNTs, $NH_3$ plasma etching has also been performed with varying plasma etching time and power. For all the CNTs grown, nanostructures and morphologies are analyzed using Raman spectroscopy and FESEM, in terms of buffer films, catalyst materials, and pre-treatment conditions. Furthermore, the field electron-emission of CNTs are measured and characterized in terms of the catalyst preparation environments. The CNTs grown on Nicatalyst layer would be more effectual for enhancing the growth rate and achieving the vertical-alignment of CNTs rather than other buffer materials from results of SEM study. The crystalline graphitic structure of CNTs is improved as the catalyst dot reaches a critical size. Also, the field-emission result shows that the CNTs using Ni catalyst would be more favorable for improving electron-emission capabilities of CNTs compared with other samples.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.146-149
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• 2004

Porous silicon(PS) as an excellent light diffuser can be used as an antireflection layer without other antireflection coating(ARC) materials. PS layers were obtained by electrochemical etching(ECE) anodization of silicon wafers in hydrofluoric acid/ethanol/de-ionized(DI) water solution($HF/EtOH/H_2O$). This technique is based on the selective removal of Si atoms from the sample surface forming a layer of PS with adjustable optical, electrical, and mechanical properties. A PS layer with optimal ARC characteristics was obtained in charge density (Q) of 5.2 $C/cm^2$. The weighted reflectance is reduced from 33 % to 4 % in the wavelength between 400 and 1000 nm. The weighted reflectance with optimized PS layers is much less than that obtained with a commercial SiNx ARC on a potassium hydroxide(KOH) pre-textured multi-crystalline silicon(mc-Si) surface.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.210-210
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• 2000

Vertically well aligned multi-wall carbon nanotubes (CNT) were grown on nickel coated glass substrates by plasma enhanced hot filament chemical vapor deposition at low temperatures below 600$^{\circ}C$. Acetylene and ammonia gas were used as the carbon source and a catalyst. Effects of growth parameters such as pre-treatment of substrate, plasma intensity, filament current, imput gas flow rate, gas composition, substrate temperature and different substrates on the growth characteristics of CNT were systematically investigated. Figure 1 shows SEM image of CNT grown on Ni coated glass substrate. Diameter of nanotube was 30 to 100nm depending on the growth condition. The diameter of CNT decreased and density of CNT increased as NH3 etching time etching time increased. Plasma intensity was found to be the most critical parameter to determine the growth of CNT. CNT was not grown at the plasma intensity lower than 500V. Growth of CNT without filament current was observed. Raman spectroscopy showed the C-C tangential stretching mode at 1592 cm1 as well as D line at 1366 cm-1. From the microanalysis using HRTEM, nickel cap was observed on the top of the grown CNT and very thin carbon amorphous layer of 5nm was found on the nickel cap. Current-voltage characteristics using STM showed about 34nA of current at the applied voltage of 1 volt. Electron emission from the vertically well aligned CNT was obtained using phosphor anode with onset electric field of 1.5C/um.

• The Journal of Advanced Prosthodontics
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• v.6 no.6
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• pp.434-443
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• 2014

PURPOSE. The purpose of this study was to evaluate and compare the effects of different surface pretreatment techniques on the surface roughness and shear bond strength of a new self-adhering flowable composite resin for use with lithium disilicate-reinforced CAD/CAM ceramic material. MATERIALS AND METHODS. A total of one hundred thirty lithium disilicate CAD/CAM ceramic plates with dimensions of $6mm{\times}4mm$ and 3 mm thick were prepared. Specimens were then assigned into five groups (n=26) as follows: untreated control, coating with $30{\mu}m$ silica oxide particles ($Cojet^{TM}$ Sand), 9.6% hydrofluoric acid etching, Er:YAG laser irradiation, and grinding with a high-speed fine diamond bur. A self-adhering flowable composite resin (Vertise Flow) was applied onto the pre-treated ceramic plates using the Ultradent shear bond Teflon mold system. Surface roughness was measured by atomic force microscopy. Shear bond strength test were performed using a universal testing machine at a crosshead speed of 1 mm/min. Surface roughness data were analyzed by one-way ANOVA and the Tukey HSD tests. Shear bond strength test values were analyzed by Kruskal-Wallis and Mann-Whitney U tests at ${\alpha}=.05$. RESULTS. Hydrofluoric acid etching and grinding with high-speed fine diamond bur produced significantly higher surface roughness than the other pretreatment groups (P<.05). Hydrofluoric acid etching and silica coating yielded the highest shear bond strength values (P<.001). CONCLUSION. Self-adhering flowable composite resin used as repair composite resin exhibited very low bond strength irrespective of the surface pretreatments used.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.383-383
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• 2010

Gas-phase hydrogen atoms create a variety of chemical and physical phenomena on Si surfaces: adsorption, abstraction of pre-adsorbed H, Si etching, Si amorphization, and penetration into the bulk lattice. Thermal desorption/evolution analyses exhibited three distinct peaks, including one from the crystalline bulk. It was previously found that thermal-energy gaseous H(g) atoms penetrate into the Si(100) crystalline bulk within a narrow substrate temperature window(centered at ~460K) and remain trapped in the bulk lattice before evolving out at a temperature as high as ~900K. Developing and sustaining atomic-scale surface roughness, by H-induced silicon etching, is a prerequisite for H absorption and determines the $T_s$ windows. Issues on the H(g) absorption to be further clarified are: (1) the role of the detailed atomic surface structure, together with other experimental conditions, (2) the particular physical lattice sites occupied by, and (3) the chemical nature of, absorbed H(g) atoms. This work has investigated and compared the thermal H(g) atom absorptivity of Si(100), Si(111) and Si(110) samples in detail by using the temperature programmed desorption mass spectrometry (TPD-MS). Due to the differences in the atomic structures of, and in the facility of creating atom-scale etch pits on, Si(100), (100) and (110) surfaces, the H-absorption efficiency was found to be larger in the order of Si(100) > Si(111) > Si(110) with a relative ratio of 1 : 0.22 : 0.045. This intriguing result was interpreted in terms of the atomic-scale surface roughening and kinetic competition among H(g) adsorption, H(a)-by-H(g) abstraction, $SiH_3(a)$-by-H(g) etching, and H(g) penetraion into the crystalline silicon bulk.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.433-433
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• 2012

As the requirement in patterning geometry continuously shrinks down, the termination of etch process at the exact time became crucial for the success in nano patterning technology. By virtue of real-time optical emission spectroscopy (OES), etch end point detection (EPD) technique continuously develops; however, it also faced with difficulty in low open ratio etching, typically in self aligned contact (SAC) and one cylinder contact (OCS), because of very small amount of optical emission from by-product gas species in the bulk plasma glow discharge. In developing etching process, one may observe that coupon test is being performed. It consumes costs and time for preparing the patterned sample wafers every test in priority, so the coupon wafer test instead of the whole patterned wafer is beneficial for testing and developing etch process condition. We also can observe that etch open area is varied with the number of coupons on a dummy wafer. However, this can be a misleading in OES study. If the coupon wafer test are monitored using OES, we can conjecture the endpoint by experienced method, but considering by data, the materials for residual area by being etched open area are needed to consider. In this research, we compare and analysis the OES data for coupon wafer test results for monitoring about the conditions that the areas except the patterns on the coupon wafers for real-time process monitoring. In this research, we compared two cases, first one is etching the coupon wafers attached on the carrier wafer that is covered by the photoresist, and other case is etching the coupon wafers on the chuck. For comparing the emission intensity, we chose the four chemical species (SiF2, N2, CO, CN), and for comparing the etched profile, measured by scanning electron microscope (SEM). In addition, we adopted the Dynamic Time Warping (DTW) algorithm for analyzing the chose OES data patterns, and analysis the covariance and coefficient for statistical method. After the result, coupon wafers are over-etched for without carrier wafer groups, while with carrier wafer groups are under-etched. And the CN emission intensity has significant difference compare with OES raw data. Based on these results, it necessary to reasonable analysis of the OES data to adopt the pre-data processing and algorithms, and the result will influence the reliability for relation of coupon wafer test and whole wafer test.

• Journal of the Korea Fashion and Costume Design Association
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• v.11 no.1
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• pp.43-51
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• 2009

The cotton, wool, cotton/wool blended(80:20) and tencel fabrics were treated with low temperature oxygen or argon plasma, enzymes(cellulase or protease), or oxygen plasma-enzyme and examined for their weight loss and conditions for treatment for the environment friendly finishing. In the plasma treatment argon gas had better effect on the weight loss than oxygen gas did and the weight loss of all the fabrics was increased as increasing discharge power and discharge time. The weight loss of cotton, wool, cotton/wool blended(80:20) fabrics decreased in a large measure after 1 hr but that of tencel didn't decrease after 1 hr. In case of cellulose fibers oxygen gas plasma induced chemical functional groups on the surface of substrate more than argon gas plasma did so the weight loss of wool was larger than that of cotton, tencel fabrics in oxygen plasma-enzyme treatment. The weight loss of cotton and tencel fabrics decreased the initial stage because oxygen plasma pre-treatment caused cross linking as well as etching effect but argon plasma pre-treatment didn't. The plasma pre-treatment cleared the way for enzyme treatment on the whole but oxygen plasma pre-treatment bear in hand the increase of weight loss more or less because of the cross linking on the surface of cellulose fibers. The appropriate conditions for plasma treatment was 10-1Torr, 40W for 30minutes and for cellulase treatment were enzyme concentration of $3g/{\ell}$, pH 5, $60^{\circ}C$ for 1hr and for protease treatment were enzyme concentration of $4g/{\ell}$ pH 8, $60^{\circ}C$ for 1hr.

• Restorative Dentistry and Endodontics
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• v.32 no.5
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• pp.426-436
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• 2007

The objective of this study is to evaluate the effect of an additional application of bonding resin on the bond strength of resin luting cements in both the light-cure (LC) and self-cure (SC) modes by means of the ${\mu}TBS$ tests. Three combinations of One-Step Plus with Choice, Single Bond with Rely X ARC, and One-Up Bond F with Bistite II were used. D/E resin and Pre-Bond resin were used for the additional application. Twelve experimental groups were made. Three mandibular $3^{rd}$ molars were used in each group. Indirect composite blocks were cemented on the tooth surface. $1\;{\times}\;1\;mm^2$ dentin-composite beam for ${\mu}TBS$ testing were made and tested. When total-etching dentin adhesives were used, an additional application of the bonding resin increased the bond strength (P < 0.05). However, this additional application didn't influence the bond strength of self-etching dentin adhesives (P > 0.05). In conclusion, the results suggest that an additional application of the bonding resin increases bond strength and enhances quality of bonding when using total-etching dentin adhesives.