• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.11
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• pp.89-94
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• 2008

In this paper, a cascade of a wideband amplifier and a high-Q bandpass filter (BPF) has been realized in a 0.18mm CMOS technology for the applications of subsampling direct-conversion receivers. The wideband amplifier is designed to obtain the -3dB bandwidth of 5.4GHz, and the high-Q BPF is designed to select a 2.4GHz RF signal for the Bluetooth specifications. The measured results demonstrate 18.8dB power gain at 2.34GHz with 31MHz bandwidth, corresponding to the quality factor of 75. Also, it shows the noise figure (NF) of 8.6dB, and the broadband input matching (S11) of less than -12dB within the bandwidth. The whole chip dissipates 64.8mW from a single 1.8V supply and occupies the area of $1.0{\times}1.0mm2$.

• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.4
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• pp.117-123
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• 2013

In the recent cloud storage environment, the amount of SSD (Solid-State Drive) replacing with the traditional hard disk drive is increasing. Management of SSD for its space efficiency has become important since SSD provides fast IO performance due to no mechanical movement whereas it has wearable characteristics and does not provide in place update. In order to manage space efficiency of SSD, data de-duplication technique is frequently used. However, this technique occurs much overhead because it consists of data chunking, hasing and hash matching operations. In this paper, we propose new data de-duplication method using PRAM cache. The proposed method uses hierarchical hash tables and LRU(Least Recently Used) for data replacement in PRAM. First hash table in DRAM is used to store hash values of data cached in the PRAM and second hash table in PRAM is used to store hash values of data in SSD storage. The method also enhance data reliability against power failure by maintaining backup of first hash table into PRAM. Experimental results show that average writing frequency and operation time of the proposed method are 44.2% and 38.8% less than those of existing data de-depulication method, respectively, when three workloads are used.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.17 no.9 s.112
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• pp.811-820
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• 2006

Ultra wideband CPW batons are proposed in this paper. The proposed talons are consisted of ultra wideband multi-stage Wilkinson dividers and 'X'-shaped $180^{\circ}$ out-of-phase generator. Bottom-bridges and via-holes are used to connect CPW ground lines instead of the conventional air-bridges which require troublesome manual working in fabrication with HMIC(Hybrid Microwave Integrated Circuits) substrates. The proposed CPW batons have ultra wideband of 3 or $10(=F_{figh}/F_{low})$ theoretically, the wideband characteristics and S-parameters of the basis Wilkinson divider are directly converted to those of the proposed batons. The proposed batons are so compact and small compared to the conventional Wilkinson batons because no additional area for out-of-phase section is required. So the size of the proposed batons is exactly the same as that of the basis Wilkinson dividers. As examples, 3-stage and 7-stage wideband Wilkinson dividers are converted to the proposed batons. Their measured operating bandwidth are $1\sim3GHz$ and $0.8\sim5GHz$, respectively, with excellent matching, isolation and power division performances. The measured magnitude and phase balance errors are ${\pm}0.5dB\;and\;0.45\;dB,\;and\;{\pm}5^{\circ}\;and\;{\pm}10^{\circ}C$ over $1\sim3GHz\;and\;0.8\sim5GHz$, respectively.

• Journal of the Korean Society of Food Science and Nutrition
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• v.40 no.10
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• pp.1378-1383
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• 2011

This study investigated the antioxidant activity of ethanolic extracts of 1~20 kGy-gamma irradiated flowering cherry fruit (Prunus serrulata L. var. spontanea Max. wils.). The total phenolic compound content was highest (30.35 mg/g) in the 10 kGy sample, but there was no consistent trend matching the increase or decrease of gamma irradiation. Radical scavenging activity using DPPH (2,2-diphenyl-1-picrylhydrazyl) showed that gamma-irradiated samples were better than non-irradiated samples and that the 10 kGy-gamma irradiated sample was the best ($IC_{50}$ 327.52 ppm). In reducing power, gamma-irradiated samples induced higher activities than non-irradiated samples at concentrations below 2.5 mg/mL, and the sample with the highest activity was the 20 kGy-gamma irradiated sample. In nitrite-scavenging ability, both gamma-irradiated and non-irradiated samples showed high activity (73~94%) at pH 1.2, 3.0, and 4.2. Also, the nitrite-scavenging ability of gamma-irradiated samples was significantly different from that of the control at pH 1.2. The FRAP value of the 3 kGy-irradiated sample also showed the highest value of 0.38 mM. Our results indicate that gamma irradiating the ethanolic extracts of flowering cherry fruit increases the antioxidant activity at some of the radiation doses. Therefore, it suggests that gamma irradiation could increase biological activity and be used effectively in food manufacturing and related industries.

• Journal of Life Science
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• v.19 no.3
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• pp.349-355
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• 2009

Metabolic fingerprinting of microbial communities was investigated with Biolog GN2 plates using samples of biofilm and aeration tanks from an RABC (rotating activated Bacillus contactor) system - an advanced wastewater treatment system for the food wastewater of pig slaughterhouses. Aerobic and anaerobic results revealed the following four aspects. First, simple matching and pairs t-test of daily variation showed more defined qualitative and quantitative relatedness of active microbial communities than that of mere optical densities. Second, metabolic potentials were higher in biofilm than in aeration tanks (p<0.01), meaning higher activity of biofilm. Third, two aeration tanks showed the highest similarity (78%) and similar metabolic power (p=0.287). However, actively used carbon sources were different among samples, signifying change of active communities at each wastewater treatment step. Finally, aerobic and anaerobic metabolic fingerprinting patterns were different for the same samples representing activities of microaerophilic and/or anaerobic communities. These results suggest that daily variation and anaerobic incubation would help in the comparison of metabolic fingerprintings.

• Applied Chemistry for Engineering
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• v.29 no.1
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• pp.10-17
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• 2018

POU (point of use) scrubbers were applied for the treatment of waste gases including PFCs (perfluorocompounds) exhausted from the CVD (chemical vapor deposition), etching, and cleaning processes of semiconductor and display manufacturing plant. The GWP (global warming potential) and atmosphere lifetime of PFCs are known to be a few thousands higher than that of $CO_2$, and extremely high temperature more than 3,000 K is required to thermally decompose PFCs. Therefore, POU gas scrubbers based on the thermal plasma technology were developed for the effective control of PFCs and industrial application of the technology. The thermal plasma technology encompasses the generation of powerful plasma via the optimization of the plasma torch, a highly stable power supply, and the matching technique between two components. In addition, the effective mixture of the high temperature plasma and waste gases was also necessary for the highly efficient abatement of PFCs. The purpose of this paper was to provide not only a useful technical information of the post-treatment process for the waste gas scrubbing but also a short perspective on R&D of POU plasma gas scrubbers.

• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.12
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• pp.80-87
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• 2013

A novel instrumentation amplifier(IA) using positive polarity current-conveyor(CCII+) for electronic measurement systems with low cost, wideband, and gain control with wide range is designed. The IA consists of two CCII+, three resistor, and an operational amplifier(op-amp). The principal of the operating is that the difference of two input voltages applied into two CCII+ used voltage and current follower converts into same currents, and then these current drive resistor of (+) terminal and feedback resistor of op-amp to obtain output voltage. To verify operating principal of the IA, we designed the CCII+ and used commercial op-amp LF356. Simulation results show that voltage follower used CCII+ has offset voltage of 0.21mV at linear range of ${\pm}$4V. The IA had wide gain range from -20dB to 60dB by variation of only one resistor and -3dB frequency for the gain of 60dB was 400kHz. The IA also has merits without matching of external resistor and controllable offset voltage using the other resistor. The power dissipation of the IA is 130mW at supply voltage of ${\pm}$5V.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.6
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• pp.85-96
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• 2000

It is necessary that fully differential operational amplifier circuit should drive an external load in the VLSI design such as SCF(Switched Capacitor Filter), D/A Converter, A/D Converter, Telecommunication Circuit and etc. The conventional CMOS operational amplifier circuit has many problems according to CMOS technique. Firstly, Capacity of large loads are not able to operate well. The problem can be solve to use class AB stages. But large loads are operate a difficult, because an element of existing CMOS has a quadratic functional relation with input and output voltage versus output current. Secondly, Whole circuit of dynamic range decrease, because a range of input and output voltages go down according as increasing of intergration rate drop supply voltage. The problem can be improved by employing fully differential operational amplifier using differential output stage with wide output swing. In this paper, we proposed new current mirror has large output impedance and good current matching with input an output current and compared with characteristics for operational amplifier using cascoded current mirror. To obtain large output swing and low power consumption we suggest a fully differential operational amplifier. The circuit employs an output stage composed new current mirror and two amplifier stage. The proposed circuit is layout and circuit of capability is inspected through simulation program(SPICE3f).

• Journal of IKEEE
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• v.18 no.4
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• pp.471-477
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• 2014

In this paper, we propose a low-cost license plate recognition system based on smart cam system using Android. The proposed system consists of a portable device and server. Potable device Hardware consists of ARM Cortex-A9 (S5PV210) processor control unit, a power supply device, wired and wireless communication, input/output unit. We develope Linux kernel and dedicated device driver for WiFi module and camera. The license plate recognition algorithm is consisted of setting candidate plates areas with canny edge detector, extracting license plate number with Labeling, recognizing with template matching, etc. The number that is recognized by the device is transmitted to the remote server via the user mobile phone, and the server re-transfer the vehicle information in the database to the portable device. To verify the utility of the proposed system, user photographs the license plate of any vehicle in the natural environment. Confirming the recognition result, the recognition rate was 95%. The proposed system was suitable for low cost portable license plate recognition device, it enabled the stability of the system when used long time by using the Android operating system.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.327.1-327.1
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• 2014

Nitrides-on-silicon structures are considered to be an excellent candidate for unique design architectures and creating devices for high-power applications. Therefore, a lot of effort has been concentrating on growing high-quality III-nitrides on Si substrates, mostly Si(111) and Si(001) substrates. However, there are several fundamental problems in the growth of nitride compound semiconductors on silicon. First, the large difference in lattice constants and thermal expansion coefficients will lead to misfit dislocation and stress in the epitaxial films. Second, the growth of polar compounds on a non-polar substrate can lead to antiphase domains or other defective structures. Even though the lattice mismatches are reached to 16.9 % to GaN and 19 % to AlN and a number of dislocations are originated, Si(111) has been selected as the substrate for the epitaxial growth of nitrides because it is always favored due to its three-fold symmetry at the surface, which gives a good rotational matching for the six-fold symmetry of the wurtzite structure of nitrides. Also, Si(001) has been used for the growth of nitrides due to a possible integration of nitride devices with silicon technology despite a four-fold symmetry and a surface reconstruction. Moreover, Si(110), one of surface orientations used in the silicon technology, begins to attract attention as a substrate for the epitaxial growth of nitrides due to an interesting interface structure. In this system, the close lattice match along the [-1100]AlN/[001]Si direction promotes the faster growth along a particular crystal orientation. However, there are insufficient until now on the studies for the growth of nitride compound semiconductors on Si(110) substrate from a microstructural point of view. In this work, the microstructural properties of nitride thin layers grown on Si(110) have been characterized using various TEM techniques. The main purpose of this study was to understand the atomic structure and the strain behavior of III-nitrides grown on Si(110) substrate by molecular beam epitaxy (MBE). Insight gained at the microscopic level regarding how thin layer grows at the interface is essential for the growth of high quality thin films for various applications.