• 전기학회논문지
• /
• 제65권9호
• /
• pp.1493-1496
• /
• 2016

This paper proposes a system for reducing the standby power consumption in using the consumer electronic devices such as a television, a home theater, a set-top box, or a DVD player. The system is consisted of a flyback converter, monitoring circuits, a relay and a micro-processor. The proposed system can reduce the standby power consumption by disconnecting the AC input and the consumer devices can be turned on with a remote control. The proposed standby power system consumes the low power to receive the infrared signal from the remote controller. Furthermore, a electronic double layer capacitor is used to store the energy with high efficiency. The proposed power system can operate the 플라이백 converter to charge the electronic double layer capacitor and connect the AC input to the consumer electronic devices. The proposed power circuit can reduce the standby power consumption in AV devices without increasing the cost. The prototype is implemented to verify the system with the commercialized products.

• 전력전자학회:학술대회논문집
• /
• 전력전자학회 2013년도 추계학술대회 논문집
• /
• pp.89-90
• /
• 2013

Higher power density, higher operational temperature, lower on state resistance and higher switching frequency capabilities of Silicon Carbide (SiC) technology devices compared to Silicon (Si) devices makes it has higher promising market. One of the most developed SiC devices is the power MOSFET. This study tests the SiC MOSFET under short circuit conditions taking into account the effect of gate voltage characteristics. The results will be compared to IGBT and MOSFET Si devices with similar ratings. A tester circuit was designed to perform the short circuit operation.

• 한국정밀공학회:학술대회논문집
• /
• 한국정밀공학회 2013년도 춘계학술대회 논문집
• /
• pp.589-590
• /
• 2013

The fast development of electronic devices towards wireless, portable and multi-functionality desperately needs the self-powered and low maintenance power sources. The possibility to coupling the nanogenerator to wearable and portable electronic device facilitates the self powered device with independent and self sustained power source. Nanogenerator has ability to convert the low frequency mechanical vibration to electrical energy which is utilized to drive the electronic device [1]. The self powered power source has the ability to generate the power from environment and human activity has attracted much interest because of place and time independent. The human body motion based energy harvesting has created huge impact for future self powered electronics device applications. The power generated from the human body motion is enough to operate the future electronic devices. The energy harvesting from human body motion based on triboelectric effect has simple, cost-effective method [2, 3] and meet the required power density of devices. However, its output is still insufficient to driving electronic devices in continues manner so new technology and new device architecture required to meet required power. In the present work, we have fabricated the triboelectric nanogenerator using PDMS polymer. We have studied detail about the power output of the device with respect to different polymer thickness and varied separation distance.

• JSTS:Journal of Semiconductor Technology and Science
• /
• 제6권3호
• /
• pp.175-181
• /
• 2006

Wide band-gap semiconductor electron devices have made great progresses to produce very high power amplifiers for various wireless standards. The advantages of wide band-gap electronic devices and their progresses are summarized in this paper.

• 한국초전도ㆍ저온공학회논문지
• /
• 제9권3호
• /
• pp.57-61
• /
• 2007

The current limiting characteristics of hybrid SFCL with additional power electronic devices was investigated in order to improve operation reliabilities. The hybrid SFCL developed consists of a superconducting trigger (S/T) part, a fast switch (F/S) module and a current limiting (C/L) part. Although hybrid SFCL had shown a excellent current limiting characteristics, this device was rather vulnerable to the residual arc currents which could exist during fast switch operation. This undesirable arc should be extinguished as quickly as possible in order to implement perfect fault current commutation. So, in order to eliminate the residual arcs between fast switch contacts, the power electronic devices (IGBT or GTO) were connected in series between the S/T part and the interrupter of the F/S module. According to the fault tests conducting with an input voltage of $270\;V_{rms}$ and a fault current of $5\;kA_{rms}$, The power electronic devices could perfectly remove the arc generated between the contacts of the interrupter within 4 ms after the fault occurred. From the test analysis, it was confirmed that the hybrid SFCL could enhance the operation reliability by adopting additional power electronic devices.

• 전력전자학회논문지
• /
• 제1권1호
• /
• pp.1-6
• /
• 1996

Recent trends of the power electronic industry in China have been summarized in this paper. Based on the applications of the power electronic products in the chinese industries the production trends of power semiconductor devices, drives, power supplies, power electronic industry used in power systems in China have been briefly reviewed.

• 전력전자학회:학술대회논문집
• /
• 전력전자학회 2002년도 전력전자학술대회 논문집
• /
• pp.330-333
• /
• 2002

The design of high power electronic circuits and the verification of the design by practical experiments are time and cost consuming. Recently power circuit simulation technique is developing to do it easily. However, most of the simulation has used the ideal switch model consists of passive component that can not describe the physical characteristics of semiconductor devices and cannot describe the switching transient state. For the design of such power electronic circuits by the simulation, the switching transients are very important. Therefore the simulation models must describe the switching transient and the stationary behavior as precisely as possible on the hand and as fast as possible the other hand. This paper introduces the application of the physical models of power devices that are developed by TUM(Technical University of Munich, Germany) for the power electronic circuit analysis.

• JSTS:Journal of Semiconductor Technology and Science
• /
• 제11권4호
• /
• pp.329-335
• /
• 2011

In this paper, a dual-band integer-N frequency divider is proposed for 2.4/5.2 GHz multi-standard wireless local area networks. It consists of a multi-modulus imbalance phase switching prescaler and two all-stage programmable counters. It is able to provide dual-band operation with high resolution while maintaining a low power consumption. This frequency divider is integrated with a 5 GHz VCO for multi-standard applications. Measurement results show that the VCO with frequency divider can work at 5.2 GHz with a total power consumption of 22 mW.

• 센서학회지
• /
• 제31권1호
• /
• pp.36-40
• /
• 2022

High-power devices, such as LEDs and radars, inevitably generate a large amount of heat, which is the main cause of shortening lifespan, deterioration in performance, and failure of electronic devices. The embedded IC process can be a solution; however, when applied to large-area substrates (larger than 8 in), there is a limit owing to the difficulty in the process after wafer thinning. In this study, an 8-in wafer-level high-power electronic package based on the embedded IC process was implemented with temporary bonding and debonding technology using double-sided thermal release tape. Good heat-dissipation characteristics were demonstrated both theoretically and experimentally. These findings will advance the commercialization of high-power electronic packaging.

• 한국전기전자재료학회논문지
• /
• 제15권12호
• /
• pp.1021-1026
• /
• 2002

As the development of semiconductor process technology continue to advance, ICs continue their trend toward higher performance low power system-on-chip (SOC). These circuits require on board multi power supply. In this paper, a 0.5 ㎛ dual date oxide CMOS Process technology for multi-power application is demonstrated. 5 V and 20 V devices fabricated by proposed process is measured. From 5 V devices using dual gate precess, we got almost the same characteristics as are obtained from standard 5 V devices. And the characteristics of the 20 V device demonstrates that 3 ㎛ devices with minimum gate length are available without reliability degradation. Electrical parameters in minimum 3 ㎛ devices are 520 ㎂/㎛ current density, 120 ㎷ DIBL, 24 V BV for NMOS and ,350 ㎂/㎛ current density, 180 ㎷ DIBL, 26 V BV for PMOS, respectively.