• Applied Science and Convergence Technology
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• v.25 no.5
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• pp.85-87
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• 2016

Coincidence Doppler broadening and positron lifetime methods in positron annihilation spectroscopy has been used to analyze defect structures in metal, semiconductor and polycrystal, respectively. The S parameter and the lifetime (${\tau}$) value show that the defects were strongly related with vacancies. A positive relationship existed between the scanning electron microscope (SEM) images and the positron annihilation spectroscopy (PAS). According to the SEM images and PAS results, measurements of the defects with PAS indicate that it was more affected by the defect than the purity.

• Korean Journal of Materials Research
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• v.20 no.6
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• pp.307-311
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• 2010

Positron annihilation lifetime spectroscopy is applied to BaSrFBr : Eu film which is used for the phosphore layer, and afterwards the reliability and self-consistency of source corrections in the positron lifetime spectroscopy is investigated using a $^{22}Na$ positron emitter covered by thin foils. The positron lifetime showed no significant change through the various proton irradiation energies. It is unusual that the measurements of the defects indicate that most of the defects were likely to have been generated by X-ray radiation. This may have resulted from the Bragg peaks of the proton characteristics. The Bragg peak does not affect the defect signals enough to distinguish the lifetimes and intensities in a material that is includes multi-grains. The lifetime ($\tau_1$) associated with positron annihilations in the Ba, Br, and Eu of the sample was about 250 ps, and due to the annihilations at F-centers or defects from the irradiated protons in sample, the lifetime ($\tau_2$) was about 500 ps.

• Journal of the Korean Physical Society
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• v.73 no.12
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• pp.1895-1898
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• 2018

The mechanical properties of Al, Ti, Fe, and Cu metals p-type Si, and n-type Si were investigated by using coincidence Doppler broadening (CDB) positron annihilation spectroscopy. The samples in this experiment were irradiated by using X-rays at generating powers for up to 9 kW. The data taken after the irradiation showed all the characteristic features predicted from defects with vacancies. The S parameter values of the metals were generally less than those of semiconductors such as p-type Si and n-type Si. The relationship between n-type Si and p-type Si were more affected when n-type Si rather than p-type Si was irradiated with X-rays.

• Proceedings of the Membrane Society of Korea Conference
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• 2004.05b
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• pp.82-85
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• 2004

Flux-enhancement mechanism of thin-film-composite (TFC) membranes for the reverse comosis (RO) process was newly explained by positron annihilation lifetime spectroscopy (PALS) that has been found to be applied for detecting molecular vacancies or pores having sizes that are equivalent to salt or hydrate ions in RO membrane.(omitted)

• Journal of the Korean Society of Radiology
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• v.6 no.6
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• pp.489-493
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• 2012

Positron Annihilation Lifetime Spectroscopy is a non-destructive technique to study voids and defects in solids by the measurement of gammas from electron-positron annihilation. In this study, we measured the lifetime of CR, EPDM, NBR, all of which are widely used polymer in various fields. A conventional fast-fast coincidence system in KAERI(Korea Atomic Energy Research Institute) has been used to measure the lifetime spectra, Three lifetime components were analyzed from each lifetime spectra. According to Tao-Eldrup model equation, the size and fraction of free-volume were calculated. Mean radius and free volume fraction of CR, EPDM NBR are $0.1217nm^3$(1.9103%), $0.14780nm^3$(5.3147%), $0.1216nm^3$(2.6381%), respectively. Through these measurements, we identified the feasibility of the PAL system for polymer analysis.

• Journal of the Korean Vacuum Society
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• v.21 no.5
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• pp.225-232
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• 2012

It is described that the proton beam induceds micro-size defects and electronic deep levels in n or p type single crystal silicon. Positron lifetime and Coincidence Doppler Broadening Positron Annihilation Spectroscopy were applied to study of characteristics of p type and n type silicon samples. In this investigation the numerical analysis of the Doppler spectra was employed to the determination of the shape parameter, S, defined as the ratio between the amount of counts in a central portion of the spectrum and the total counts of whole spectrum. The samples were exposed by 3.98 MeV proton beams ranging between 0 to ${\sim}10^{14}$ particles. The S-parameter values strongly depend on the irradiated proton beam, that indicated the defects generate more. Positron lifetime shows that positrons trapped in vacancies and lifetime ${\tau}_2$ increased according to proton irradiation.

• Journal of Astronomy and Space Sciences
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• v.36 no.3
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• pp.115-119
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• 2019

This paper is a part of the series on positron annihilation spectroscopy of two-phase diffuse gas-and-dust aggregates, such as interstellar medium and the young remnants of type II supernovae. The results obtained from prior studies were applied here to detect the relationship between the processes of the annihilation of the K-shell electrons and incident positrons, and the effects of these processes on the optical spectra of their respective atoms. Particular attention was paid to the Doppler broadening of their optical lines. The relationship between the atomic mass of the elements and the Doppler broadening, ${\Delta}{\lambda}_D$ (${\AA}$), of their emission lines as produced in these processes was established. This relationship is also illustrated for isotope sets of light elements, namely $^3_2He$, $^6_3Li$, $^7_3Be$, $^{10}_5B$ and $^{11}_5B$. A direct correlation between the ${\gamma}-line$ luminosity ( $E_{\gamma}=1.022MeV$) and ${\Delta}{\lambda}_D$ (${\AA}$) was proved virtually. Qualitative estimates of the structure of such lines depending on the positron velocity distribution function, f(E), were made. The results are presented in tabular form and can be used to set up the objectives of further studies on active galactic nuclei and young remnants of type II supernovae.

• Proceedings of the Materials Research Society of Korea Conference
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• 2007.11a
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• pp.33.1-33.1
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• 2007

• Nuclear Engineering and Technology
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• v.25 no.1
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• pp.71-79
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• 1993

Positron annihilation characteristics and microhardness of 25% cold worked and isochronally annealed hafnium specimens were measured to study recovery and recrystallization stages of hafnium specimens. The annihilation lifetime of positrons in hafnium has been measured for the distinct cases of annihilation in the annealed lattice and annihilation after trapping at lattice defects generated by cold deformation at room temperature. The annihilation lifetime in the annealed lattice was 187 $\pm$3.7 psec, whereas it was 217 $\pm$ 4.2 psec for positrons trapped at deformation-induced defects (mostly dislocations). The changes in Doppler broadening and hardness showed similar trend in the recrystallization range, however, the measured value of Doppler broadening variation were quite sensitive to changes in the recovery region in which the variation in hardness value was completely insensitive. Recovery of cold worked hafnium initiated at about 623 K and recrystallization occurred at around 1023 K.

• Proceedings of the Korean Vacuum Society Conference
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• 1995.02a
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• pp.116-116
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• 1995