• Journal of the Korean Electrochemical Society
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• v.3 no.3
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• pp.152-156
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• 2000

The effect of cupric ion concentration on the throwing power has been studied in the electrodeposition of Cu on the porous reticular electrodes with the electrolytes of $CuSO_4\;and\;H_2SO_4$. Sulfuric acid electrolytes with lower concentration of $CuSO_4$ improved throwing power in electrodeposition of copper not only due to higher cathodic polarizability but also due to higher conductivity of the electrolytes. The increase in conductivity of the electrolytes at low concentration of $CuSO_4$ could be also illustrated by the decrease in viscosity of the electrolytes. It was found that both the throwing power and the limiting current density should be taken into account in the electrodeposition of Cu on the reticular electrodes. According to the experimental results, the electrolyte of 0.2M $CuSO_4$ and 0.5M $H_2SO_4$ was found to be the most appropriate condition at the current density of $10mA/cm^2$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.1
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• pp.38-42
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• 2005

B$_2$O$_3$ added Ba(Mg$_{1}$3/Nb$_{2}$3/)O$_3$ (BBMN) ceramics were not sintered below 900 $^{\circ}C$. However, when CuO was added to the BBMN ceramic, it was sintered even at 850 $^{\circ}C$. The amount of the $Ba_2$B$_2$O$_{5}$ second phase decreased with the addition of CuO. Therefore, the CuO additive is considered to react with the B$_2$O$_3$ inhibiting the reaction between B$_2$O$_3$ and BaO. Moreover, it is suggested that the solid solution of CuO and B$_2$O$_3$ might be responsible for the decrease of the sintering temperature of the specimens. A dense microstructure without pores was developed with the addition of a small amount of CuO. However, a porous microstructure with large pores was formed when a large amount of CuO was added. The bulk density, the dielectric constant ($\varepsilon$$_{r}$) and the Q-value increased with the addition of CuO but they decreased when a large amount of CuO was added. The variations of those properties are closely related to the variation of the microstructure. The excellent microwave dielectric properties of Qxf = 21500 GHz, $\varepsilon$$_{r}$ = 31 and temperature coefficient of resonance frequency($\tau$$_{f}$) = 21.3 ppm/$^{\circ}C$ were obtained for the Ba(Mg$_{1}$3/Nb$_{2}$3/)O$_3$+2.0 mol%B$_2$O$_3$+10.0 mol%CuO ceramic sintered at 875 $^{\circ}C$ for 2 h.h.2 h.h.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.838-841
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• 2004

[ $B_2O_3$ ] added $Ba(Mg_{1/3}Nb_{2/3})O_3$ (BBMN) ceramics were not sintered below $900^{\circ}C$. However, when CuO was added to the BBMN ceramic, it was sintered even at $850^{\circ}C$. The amount of the $Ba_2B_2O_5$ second phase decreased with the addition of CuO. Therefore, the CuO additive is considered to react with the $B_2O_3$ inhibiting the reaction between $B_2O_3$ and BaO. Moreover, it is suggested that the solid solution of CuO and $B_2O_3$ might be responsible for the decrease of the sintering temperature of the specimens. A dense microstructure without pores was developed with the addition of a small amount of CuO. However, a porous microstructure with large pores was formed when a large amount of CuO was added. The bulk density the dielectric constant $({\varepsilon}_r)$ and the Q-value increased with the addition of CuO but they decreased when a large amount of CuO was added. The variations of those properties are closely related to the variation of the microstructure. The excellent microwave dielectric properties of Qxf=21500 GHz, ${\varepsilon}_r=31$ and temperature coefficient of resonance frequency$({\tau}_f)=21.3\;ppm/^{\circ}C$ were obtained for the $Ba(Mg_{1/3}Nb_{2/3})O_3+2.0\;mol%B_2O_3+10.0$ mol%CuO ceramic sintered at $875^{\circ}C$ for 2h.

• Proceedings of the KIEE Conference
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• 1992.07b
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• pp.740-743
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• 1992

Effects of powder sintering and 2nd, pressing on the superconducting characteristics in the (Bi,Pb)SrCaCuO system have been studied. The sample prepared by the powder sintering process had a porous microstructure with a $T_c$ below 77 K, while the sample prepared by 2nd. pressing process had highly oriented microstructure with a $T_c$ above 100 K. The critical current density($J_c$) was relatively improved in the sample prepared by the 2nd. pressing process. But the value of $J_c$ is cosiderably low in practical use.

• Journal of the Korean institute of surface engineering
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• v.51 no.1
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• pp.47-53
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• 2018

Sn-based lithium-ion batteries have low cost and high theoretical specific capacity. However, one of major problem is the capacity fading caused by volume expansion during lithiation/delithiation. In this study, 3-dimensional foam structure of Cu-Sn alloy is prepared by co-electrodeposition including large free space to accommodate the volume expansion of Sn. The Cu-Sn foam structure exhibits highly porous and numerous small grains. The result of EDX mapping and XPS spectrum analysis confirm that Cu-Sn foam consists of $SnO_2$ with a small quantity of CuO. The Cu-Sn foam structure electrode shows high reversible redox peaks in cyclic voltammograms. The galvanostatic cell cycling performances show that Cu-Sn foam electrode has high specific capacity of 687 mAh/g at a current rate of 50 mA/g. Through SEM observation after the charge/discharge processes, the morphology of Cu-Sn foam structure is mostly maintained despite large volume expansion during the repeated lithiation/delithiation reactions.

• Applied Chemistry for Engineering
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• v.8 no.4
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• pp.589-594
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• 1997

Superconducting $YBa_2Cu_3O_y$ thin films were prepared at the deposition temperature of $650^{\circ}C$ under oxygen partial pressure of 0.0126 Torr on Si(111) and SrTiO3(100) substrates by chemical vapor deposition technique using $\beta$-diketonates of Y, Ba and Cu as source materials. The thin film fabricated on $SrTiO_3(100)$ had a $T_{c,onset}$ of 91K and $T_{c.0}$ of 87K. The thin film prepared on Si(111) had a $T_{c,onset}$ of 91K but didn't have a $T_{c.0}$ at liquid nitrogen boiling point(77.3K). Dense and two-dimensionally well alligned microstructure was developed for the film deposited on $SrTiO_3(100)$ substrate whereas a relatively porous and randomly distributed microstructure was developed for the film prepared on Si(111) substrate.

• Journal of the Microelectronics and Packaging Society
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• v.19 no.3
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• pp.37-41
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• 2012

The wafer level stacking with Cu-to-Cu bonding becomes an important technology for high density DRAM stacking, high performance logic stacking, or heterogeneous chip stacking. Cu CMP becomes one of key processes to be developed for optimized Cu bonding process. For the ultra low-k dielectrics used in the advanced logic applications, Ti barrier has been preferred due to its good compatibility with porous ultra low-K dielectrics. But since Ti is electrochemically reactive to Cu CMP slurries, it leads to a new challenge to Cu CMP. In this study Ti barrier/Cu interconnection structure has been investigated for the wafer level 3D integration. Cu CMP wafers have been fabricated by a damascene process and two types of slurry were compared. The slurry selectivity to $SiO_2$ and Ti and removal rate were measured. The effect of metal line width and metal density were evaluated.

• Journal of the Korean Ceramic Society
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• v.45 no.12
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• pp.807-814
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• 2008

The Cu-Ni-YSZ cermet anodes for direct use of methane in solid oxide fuel cells have been fabricated by electroplating Cu into the porous Ni-YSZ cermet anode. The uniform distribution of Cu in the Ni-YSZ anode could be obtained via pulse electroplating in the aqueous solution mixture of $CuSO_4{\cdot}5H_{2}O$ and ${H_2}{SO_4}$ for 30 min with 0.05 A of average applied current. The power density ($0.17\;Wcm^{-2}$) of a single cell with a Cu-Ni-YSZ anode was shown to be slightly lower in methane at $700^{\circ}C$, compared with the power density ($0.28\;Wcm^{-2}$) of a single cell with a Ni-YSZ anode. However, the performance of the Ni-YSZ anode-supported single cell was abruptly degraded over 21 h because of carbon deposition, whereas the Cu-Ni-YSZ anode-supported single cell showed the enhanced durability upto 52 h.

• Journal of the Korean Ceramic Society
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• v.43 no.9 s.292
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• pp.544-551
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• 2006

The sealing technique between a glass tube and a copper heat pipe in an evacuated tube solar collector is studied. In this study two different sealing techniques, such as flame method and furnace firing, are examined. After the sealing of a copper to a glass, the oxidation state of the copper and its bonding morphology were examined by SEM and XRD. Its oxidation was retarded by coating of borate solution on the copper, and $Cu_2O(cuprite)$ turned into CuO(tenorite) with increase in a firing temperature and firing time. Porous structure was found in the oxide layer when CuO formed. The best sealing morphology was observed when the thickness of the oxidation layer was less than $20{\mu}m$. The sealing technique performed in a furnace was promising and the satisfactory result was obtained when the sample was fired at $950^{\circ}C$ for 5 min under $N_2$ atmosphere. Annealing procedure is recommended to remove the stress left at the bonding zone.

• Electrical & Electronic Materials
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• v.7 no.4
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• pp.306-311
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• 1994

In this study, the influence of the powder sintering, the 2nd sinteiing and the grinding time on the Superconducting properties in the Bi(Pb)SiCaCuO Superconductor has been studied. From the analysis of SEM and XRD patterns, it was known that the sample prepared by the process of powder sintering has a porous microstructure with the critical temperature(Tc) below 77K, while the sample prepared by the 2nd sintering has a highly oriented microstructure with the Tc above 100K. The Critical Current Density(Jc) of the sample prepared by the 2nd sintering was better than the sample prepared by the process of powder sinteiing, but it's Jc, was low in practical use. Also, the effect of grinding time from 0[min] to 120[min] was investigated. As the grinding time is increased, the samples degraded from high-Tc phase to low-Tc phase and nonsuperconducting phases.