Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Low-temperature Sintering and Microwave Dielectric Properties of the B2O3 and CuO-added Ba(Mg1/3Nb2/3)O3 Ceramics

B2O3와 CuO가 첨가된 Ba(Mg1/3Nb2/3)O3 세라믹스의 저온소결과 마이크로파 유전특성 연구

  • 임종봉 (고려대학교 재료공학과) ;
  • 손진옥 (고려대학교 재료공학과) ;
  • 남산 (고려대학교 재료공학과) ;
  • 유명재 (전자부품연구원 고주파재료연구센터) ;
  • 이우성 (전자부품연구원 고주파재료연구센터) ;
  • 강남기 (전자부품연구원 고주파재료연구센터) ;
  • 이확주 (한국표준과학연구원 물질량표준부)
  • Published : 2005.01.01
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Abstract

B$_2$O$_3$ added Ba(Mg$_{1}$3/Nb$_{2}$3/)O$_3$ (BBMN) ceramics were not sintered below 900 $^{\circ}C$. However, when CuO was added to the BBMN ceramic, it was sintered even at 850 $^{\circ}C$. The amount of the $Ba_2$B$_2$O$_{5}$ second phase decreased with the addition of CuO. Therefore, the CuO additive is considered to react with the B$_2$O$_3$ inhibiting the reaction between B$_2$O$_3$ and BaO. Moreover, it is suggested that the solid solution of CuO and B$_2$O$_3$ might be responsible for the decrease of the sintering temperature of the specimens. A dense microstructure without pores was developed with the addition of a small amount of CuO. However, a porous microstructure with large pores was formed when a large amount of CuO was added. The bulk density, the dielectric constant ($\varepsilon$$_{r}$) and the Q-value increased with the addition of CuO but they decreased when a large amount of CuO was added. The variations of those properties are closely related to the variation of the microstructure. The excellent microwave dielectric properties of Qxf = 21500 GHz, $\varepsilon$$_{r}$ = 31 and temperature coefficient of resonance frequency($\tau$$_{f}$) = 21.3 ppm/$^{\circ}C$ were obtained for the Ba(Mg$_{1}$3/Nb$_{2}$3/)O$_3$+2.0 mol%B$_2$O$_3$+10.0 mol%CuO ceramic sintered at 875 $^{\circ}C$ for 2 h.h.2 h.h.

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References

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