• Proceedings of the International Microelectronics And Packaging Society Conference
• /
• 한국마이크로전자및패키징학회 2002년도 춘계 기술심포지움 논문집
• /
• pp.92-97
• /
• 2002

We establish a visible light emission from porous polycrystalline silicon nano structure(PPNS). The PPNS layer are formed on heavily doped n-type Si substrate. 2um thickness of undoped polycrystalline silicon deposited using LPCVD (Low Pressure Chemical Vapor Deposition) anodized in a HF: ethanol(=1:1) as functions of anodizing conditions. And then a PPNS layer thermally oxidized for 1 hr at $900 ^{\circ}C$. Subsequently, thin metal Au as a top electrode deposited onto the PPNS surface by E-beam evaporator and, in order to establish ohmic contact, an thermally evaporated Al was deposited on the back side of a Si-substrate. When the top electrode biased at +6V, the electron emission observed in a PPNS which caused by field-induces electron emission through the top metal. Among the PPNSs as functions of anodization conditions, the PPNS anodized at a current density of $10mA/cm^2$ for 20 sec has a lower turn-on voltage and a higher emission current. Furthermore, the behavior of electron emission is uniformly maintained.

• The Transactions of the Korean Institute of Electrical Engineers
• /
• 제41권7호
• /
• pp.760-765
• /
• 1992

The material properties and the TFT characteristics fabricated on SiOS12T substrate by LPCVD using SiHS14T gas were investigated. The deposition rate showed Arrhenius behavior with an activation energy of 31Kcal/mol. And the transition temperature form amorphous to crystalline deposition was observed at 570$^{\circ}C$-580$^{\circ}C$. The strong(220) texture was observed as the deposition temperature increases. XRD analysis showed that the film texture of the as-deposited polycrystalline silicon does not change after annealing at 850$^{\circ}C$. The fabricated TFT's based on the as-deposited amorphous film showed superior electrical characteristics to those of the as-deposited polycrystalline films. It is considered that the different electrical characteristics result from the difference of flat band voltage(VS1FBT) due to the interface trap density between the gate oxide and the active channel.

• Journal of the Korean Ceramic Society
• /
• 제40권11호
• /
• pp.1120-1126
• /
• 2003

Yttrium Aluminum Garnet (YAG) powders were prepared by precipitation of Y hydroxides during milling of alumina powders. The powder calcined at 1200$^{\circ}C$ for 4 h contained a small amount of Yttrium Aluminum Monoclinic (YAM) in addition to YAG. However, phase-pure YAG was obtained in the compact of the milled powder with an average particle size of 0.57 ${\mu}$m at 1300$^{\circ}C$, which is much lower than those (l500∼1600$^{\circ}C$) for a mixed oxide method. The powder was found to exhibit an excellent sinterability regardless of the addition of a sintering aid, SiO$_2$(350 ppm Si). The undoped sample were sintered to a relative density of 98% at l600$^{\circ}C$. In contrast, the addition of SiO$_2$ caused a considerable densification to occur at 1500$^{\circ}C$ and the relative density reached 97.7%. But the sintering aid had little effect on the densification at 1600$^{\circ}C$, showing a similar relative density to the undoped sample.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• 제53권5호
• /
• pp.237-241
• /
• 2004

Amorphous silicon (a-Si) films are used in a broad range of solar cell, flat panel display, and sensor. Because of the greater ease of deposition and lower processing temperature, thin films are widely used for thin film transistors (TFTs). However, they have lower stability under the exposure of visible light and because of their low field effect mobility ($\mu$$_{FE}$ ) , less than 1 c $m^2$/Vs, they require a driving IC in the external circuits. On the other hand, polycrystalline silicon (poly-Si) thin films have superiority in $\mu$$_{FE}$ and optical stability in comparison to a-Si film. Many researches have been done to obtain high performance poly-Si because conventional methods such as excimer laser annealing, solid phase crystallization and metal induced crystallization have several difficulties to crystallize. In this paper, a new crystallization process using a molybdenum substrate has been proposed. As we use a flexible substrate, high temperature treatment and roll-to-roll process are possible. We have used a high temperature process above 75$0^{\circ}C$ to obtain poly-Si films on molybdenum substrates by a rapid thermal annealing (RTA) of the amorphous silicon (a-Si) layers. The properties of high temperature crystallized poly-Si studied, and poly-Si has been used for the fabrication of TFT. By this method, we are able to achieve high crystal volume fraction as well as high field effect mobility.

• Journal of the Korean Ceramic Society
• /
• 제35권3호
• /
• pp.259-263
• /
• 1998

WSi2/CVD-Si/SiO2/Si-substrate의 폴리사이드 구조에서 실리콘 증착 POCl3 확산 그리고 WSi2 증착 유무에 따른 Thin oxide 특성을 연구했다 WSi2 막을 증착하지 않은 CVD-Si/SiO2/Si-substrate 구조에서 CVD-Si을 po-lycrystalline-Si으로 증착한 시편이 amorphous-Si을 증착한 시편보다 산화막 불량이 적다 WSi2 를 증착시킨 WSi2/CVD-Si/SiO2./Si-substrate의 구조에서 CVD-Si의 polycrystalline-Si 혹든 amorphous-Si 의 막 증착에 따른 thin oxide의 불량율 차이는 미미하다 산화막 불량은 CVD-Si에 확산시킨 인(P) 증가 즉 면저항(sheet resistance) 감소로 증가한다. Thin oxide의 절연특성은 WSi2 증착으로 저하된다 WSi2 증착으로 산화막 두께는 증가하나 막 특성은 열등해져 산화막 절연성이 떨어진다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 한국전기전자재료학회 2009년도 추계학술대회 논문집
• /
• pp.112-112
• /
• 2009

In this study, the effect of a long post-deposition thermal annealing(600 and 1000 $^{\circ}C$) on the surface acoustic wave (SAW) properties of polycrystalline (poly) aluminum-nitride (AlN) thin films grown on a 3C-SiC buffer layer was investigates. The poly-AlN thin films with a (0002) preferred orientation were deposited on the substrates by using a pulsed reactive magnetron sputtering system. Experimental results show that the texture degree of AlN thin film was reduced along the increase in annealing temperature, which caused the decrease in the electromechanical coupling coefficient ($k^2$). The SAW velocity also was decreased slightly by the increase in root mean square (RMS) roughness over annealing temperature. However, the residual stress in films almost was not affect by thermal annealing process due to small lattice mismatch different and similar coefficient temperature expansion (CTE) between AlN and 3C-SiC. After the AlN film annealed at 1000 $^{\circ}C$, the insertion loss of an $IDT/AlN/3C-SiC/SiO_2/Si$ structure (-16.44 dB) was reduced by 8.79 dB in comparison with that of the as-deposited film (-25.23 dB). The improvement in the insertion loss of the film was fined according to the decrease in the grain size. The characteristics of AlN thin films were also evaluated using Fourier transform-infrared spectroscopy (FT-IR) spectra and X-ray diffraction (XRD), scanning electron microscopy (SEM), and atomic force microscopy (AFM) images.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 한국전기전자재료학회 1993년도 추계학술대회 논문집
• /
• pp.55-59
• /
• 1993

In this study, we developed new process for doping poly-Si film. Sb(antimony) thin film was used as doping source. Sb was evaporated on poly-Si film deposited by LPCVD fallowed by annealing. We investigate sheet resistance variation with annealing temperature and time. Finally we adapted this process to poly-Si TFT fabrication.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 한국표면공학회 2006년도 춘계학술발표회 초록집
• /
• pp.119-120
• /
• 2006

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 한국전기전자재료학회 2009년도 추계학술대회 논문집
• /
• pp.45-45
• /
• 2009

This paper describes the formation of porous 3C-SiC by anodization. 3C-SiC thin films were deposited on p-type Si(100) substrates by APCVD using HMDS (Hexamethyildisilane: $Si_2(CH_3)_6$). UV-LED(380 nm) was used as a light source. The surface morphology was observed by SEM and the pore size was increased with increase of current density. Pore diameter of 70 ~ 90 nm was achieved at 7.1 $mA/cm^2$ current density and 90 sec anodization time. FT-IR was conducted for chemical bonding of thin film and porous 3C-SiC. The Si-H bonding was observed in porous 3C-SiC around wavenumber 2100 $cm^{-1}$. PL shows the band gap enegry of thin film (2.5 eV) and porous 3C-SiC (2.7 eV).

• Journal of the Korean Society of Manufacturing Technology Engineers
• /
• 제20권6호
• /
• pp.785-792
• /
• 2011

Equal channel angular(ECA) pressing is the established processing technique in which a polycrystalline metal is pressed through the die to achieve a very high plastic strain. Therefore, the capability to produce an ultra-fine grain size in the materials is provided. To investigate that mechanical properties at elevated temperature have the ultrafine grain ECA pressing, experiments were conducted on an Al-4.8% Mg-0.07% Mn-O.06% Si alloy. After having been solution treated at 773K for 2hrs, the billet for ECA pressing was inserted into the die. And it was pressed through two channel of equal to cross section intersecting at a 90 degree angle. The billet can be extrude repeatedly because of 1:1 extrusion ratio. Since the billet is passed through the cannel for 2 times, a large strain is accumulated in the alloy. The tensile tests on elevated temperature were carried out with initial strain rate of $10^{-3}s^{-1}$ at eight temperature distributed from 293K to 673K.