• Bulletin of the Korean Chemical Society
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• v.23 no.4
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• pp.580-586
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• 2002

We investigated the effect of ionic component on crystalline morphology development during isothermal annealing in a sodium neutralized sulfonated poly(ethylene terephthalate) ionomer (Ion-PET) by time-resolved small-angle x-ray scattering (TR-SAX S) using synchrotron radiation. At early stage in Ion-PET, SAXS intensity at a low annealing temperature (Ta = 120 $^{\circ}C)$ decreased monotonously with scattering angle for a while. Then SAXS profile showed a peak and the peak position progressively moved to wider angles with isothermal annealing time. Finally, the peak intensity decreased, shifting the peak angle to wider angle. It is revealed that ionic aggregates (multiplets structure) of several nm, calculated by Debye-Bueche plot, are formed at early stage. They seem to accelerate the crystallization rate and make fine crystallites without spherulite formation (supported by optical microscopy observation). From decrease of peak intensity in SAXS,it is suggested that new lamellae are inserted between the preformed lamellae so that the concentration of ionic multiplets in amorphous region decreases to lower the electron density difference between lamellar crystal and amorphous region. In addition, analysis on the annealing at a high temperature (Ta = 210 $^{\circ}C)$ by optical microscopy, light scattering and transmission electron microscopy shows a formation of spherulite, no ionic aggregates, the retarded crystallization rate and a high level of lamellar orientation.

• Journal of the Korean Physical Society
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• v.73 no.9
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• pp.1329-1333
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• 2018

We investigated the mechanism of mobility enhancement after the dehydrogenation process in polycrystalline silicon (poly-Si) thin films. The dehydrogenation process was performed by using an in-situ CVD chamber in a $N_2$ ambient or an ex-situ furnace in air ambient. We observed that the dehydrogenated poly-Si in a $N_2$ ambient had a lower oxygen concentration than the dehydrogenated poly-Si annealed in an air ambient. The in-situ dehydrogenation increased the (111) preferred orientation of poly-Si and reduced the oxygen concentration in poly-Si thin films, leading to a reduction of the trap density near the valence band. This phenomenon gave rise to an increase of the field-effect mobility of the poly-Si thin film transistor.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.1007-1010
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• 2004

We report crystallization of a-Si using XeCl excimer laser annealing [1] on the plastic substrate. We tried to obtain higher crystallinity as the effect of $CeO_2$ seed layer patterned. Also, we tried to control the direction of crystallization growth of silicon layer for lateral growth as the type of $CeO_2$ pattern. This crystallization method plays an important role in low temperature poly-Si (LTPS) [2] process and flexible display.

• Journal of the Korean Vacuum Society
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• v.7 no.s1
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• pp.123-133
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• 1998

Amorphous silicon (a-Si) was crystallized by metal induced crystallization using metal solution. The a-Si films spin coated with a 50,000 ppm Ni solution were crystallized at as low as $500^{\circ}C$. Needlelike morphology, developed as a result of the migration of $NiSi_2$, precipitates, appears in the MIC poly-Si. The growth of the needlelike crystallites proceeds to a direction parallel to (111). The crystallization temperature can be lowered to $450^{\circ}C$ by Au addition. The enhancement of crystallization results from the decrease of interfacial energy at the NiSi2/Si interface by Au addition.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.985-988
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• 2008

Metal induced crystallization of a-Si with a source of Ni/Si oxide was studied. Its mechanism to induce crystallization was discussed. It was found that new source behaves an effect of self-released nickel and reducing nickel residua, so can provide a wider process tolerance; improve the uniformity and stability of TFTs.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1756-1760
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• 2006

LTPS technology based on SLS Crystallization was intensively reviewed. LTPS structure produced by SLS crystallization is composed of much larger grains compared with conventional ELA crystallization structure, which can give higher TFT performances. However, TFT performance uniformity and anisotropy problem should be solved for it to be used in mass production. TFT performance uniformity was from main grain boundary position and could be solved by equal defect area structure $(EDAS^{TM})$. TFT performance anisotropy could be also solved by multi-channel (MC) structure that can make parallel component in perpendicular channel direction. The higher TFT performances from SLS technology can make superior optical and/or electrical properties and has been adopted in mass production successfully.

• Proceedings of the Korean Fiber Society Conference
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• 2003.04a
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• pp.79-82
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• 2003

An ionomer is defined as an ion-containing polymer with a small amount (usually up to 10-15 mol%) of ionic groups along the backbone chains or as pendant groups. Ionomers have been extensively studied because of the significant changes in their physical properties due to the formation of ionic aggregates, such as enhanced mechanical properties, high melt viscosity, and increased thermal properties.$\^$1-5/ Although there have been many studies of ionomers, the crystallization behaviour of degradable ionomers is still not understood. (omitted)

• Proceedings of the Korean Fiber Society Conference
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• 2003.04a
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• pp.243-246
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• 2003

Poly(butylene terephthalate)(PBT) is an important engineering polyester. It crystallizes much more easily and faster than PET. And these crystallization properties determine its use as an injection molding resin. Although it is more extensive than PET, its crystallization can be controlled much more easily during processing. General electric (Schenectady, NY) is the main producer of PBT films. Its production capacity was 3-5million pounds per year in 1987. (omitted)

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.189-189
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• 2003

최근, Low-temperature Poly-Si(LTPS) TFT시장이 새롭게 형성됨에 따라 저온결정화 기술 연구가 활발히 진행되고 있다. 그러나, 기존의 저온결정화방법에 비해 수율이 높고 생산단가를 낮출 수 있으며 대 면적 프로세스 적용이 가능한 결정화공정개발이 시급히 필요한 실정이다. 본 연구에서는 TFT-LCD array를 구성하고 있는 데이터 라인과 ITO 공통 전극이 개별 트랜지스터의 소스와 드레인에 연결되어있다는 점에 착안하여, 전계를 이용한 방향성유도결정화법(Field Aided Lateral Crystallization)을 이에 적용하였으며 채널영 역의 균일한 결정화를 위하여 컨택홀의 모양에 변화를 주어 결정화 실험을 진행하였다. 이 방법은 간단한 공정(TFT-LCD way를 통한 전계 인가 및 열처리)으로 패널내의 모든 채널영 역을 균일하게 결정화할 수 있을 것으로 기대되는 방식이다.

• Journal of Electrochemical Science and Technology
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• v.9 no.1
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• pp.1-8
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• 2018

The effect of mixing ratio on the corrosion protection of carbon steel coated by a film composed of poly(vinylidene) fluoride (PVDF) and poly(methyl methacrylate) (PMMA) was examined using electrochemical impedance spectroscopy. Surface crystallization behavior and thermal properties of the PVDF/PMMA coated carbon steel were evaluated using polarized optical microscopy and differential scanning calorimetry, respectively. A Maltese cross-pattern spherulite crystal was observed in the PVDF/PMMA coating film, which became more apparent with increasing PVDF content. The highest corrosion protection performance was achieved with 60 wt.% PVDF-coated carbon steel, and delamination and corrosion reactions were observed for 20 wt.% PVDF-coated carbon steel. Further, corrosion protection performance with an amorphous/crystal mixture (PVDF/PMMA, 60/40 (w/w)) was better than those observed in the amorphous domain and the perfect-crystal domain of the PVDF/PMMA blended coating system.