• 센서학회지
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• 제16권6호
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• pp.462-466
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• 2007

Aluminum nitride (AlN) thin films were deposited on Si substrates by using polycrystalline (poly) 3C-SiC buffer layers, in which the AlN film was grown by pulsed reactive magnetron sputtering. Characteristics of grown AlN films were investigated experimentally by means of FE-SEM, X-ray diffraction, and FT-IR, respectively. The columnar structure of AlN thin films was observed by FE-SEM. X-ray diffraction pattern proved that the grown AlN film on 3C-SiC layers had highly (002) orientation with low value of FWHM (${\Theta}=1.3^{\circ}$) in the rocking curve around (002) reflections. These results were shown that almost free residual stress existed in the grown AlN film on 3C-SiC buffer layers from the infrared absorbance spectrum. Therefore, the presented results showed that AlN thin films grown on 3C-SiC buffer layers can be used for various piezoelectric fields and M/NEMS applications.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.292-292
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• 2013

최근, 자연의 기능성 표면을 모사하여 우리 생활에 응용하기 위한 연구가 활발하다. 초-발수 특성을 가지는 대표적인 예인 연꽃잎은 마이크로-나노 크기의 거친 미세돌기(papillae)를 가지고 있으며 그 위에 낮은 표면 에너지를 가지는 왁스(wax)가 발달 되어 항상 깨끗한 상태를 유지한다. 본 실험에서는 이를 모사하여 RIE (Reactive Ion Etching)방법을 이용하여 기판인 Poly silicon wafer를 Sf6가스를 사용하여 Metal mash로 거칠기를 만들어 주었고, RF-magnetron sputtering 장치를 사용하여 $6{\times}10^{-3}$ Torr의 진공도에서 낮은 표면에너지를 가지는 PTFE (polytetrafluoroethylene)를 증착하여 표면 구조와 발수특성에 대하여 조사하였다. SSME(Surface shape measurement equipment)측정결과 0.24~0.36 um RSa 값이 측정되었고, 12 uL의 Di-water로 접촉각을 측정 한 결과 RIE 10분 처리를 한 기판 위에 PTFE를 3분 증착하였을 때 가장 높은 $153^{\circ}$의 초-발수 특성이 나타났으며, 4주의 시간이 지났을 때에도 접촉각이 유지가 되었다. XPS 측정결과 초-발수 표면에서 나타나는 CF2와 CF3 피크 값이 측정되었다. Reactive Ion Etching을 이용한 PTFE 발수 특성은 방수, 스마트 윈도우, 자가세정(Self-Cleaning), 디스플레이 표시장치, 김서림 방지(Anti-Fogging), 대전방지 코팅 등에 다각적으로 응용 가능할 것이라 사료된다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제8권3호
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• pp.251-263
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• 2008

In this paper, we report an analytical modeling and 2-D Synopsys Sentaurus TCAD simulation of ion implanted silicon carbide MESFETs. The model has been developed to obtain the threshold voltage, drain-source current, intrinsic parameters such as, gate capacitance, drain-source resistance and transconductance considering different fabrication parameters such as ion dose, ion energy, ion range and annealing effect parameters. The model is useful in determining the ion implantation fabrication parameters from the optimization of the active implanted channel thickness for different ion doses resulting in the desired pinch off voltage needed for high drain current and high breakdown voltage. The drain current of approximately 10 A obtained from the analytical model agrees well with that of the Synopsys Sentaurus TCAD simulation and the breakdown voltage approximately 85 V obtained from the TCAD simulation agrees well with published experimental results. The gate-to-source capacitance and gate-to-drain capacitance, drain-source resistance and trans-conductance were studied to understand the device frequency response. Cut off and maximum frequencies of approximately 10 GHz and 29 GHz respectively were obtained from Sentaurus TCAD and verified by the Smith's chart.

• 한국재료학회:학술대회논문집
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• 한국재료학회 1993년도 춘계학술발표회
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• pp.22-22
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• 1993

Tungsten silicide는 낮은 전도도, 높은 녹는점, pattern 형성에 용이함등으로 VLSI device Interconnect(Bit line)로 활발하게 이용되고 있다. 일반적으로 Tungsten silicide 는 polycide(WSi$_2$/poly-Si)구조로 사용이 되며, polycide 구조는 산화분위기에서 WSi$_2$위에 SiO$_2$막을 쉽게 형성시키는 장점이 있다. As-dep상태의 polycide를 산화시킬적에는 텅스텐 실리사이드에 존재하는 excess-silicon과 microcrystalline 구조 (grain size=3$\AA$)로 인하여 텅스텐 실리사이드 표면에 균일한 SiO$_2$가 형성이 된다. 그러나 post-anneal을 실시한 샘플 Furnace anneal ($N_2$:O$_2$유량비=2:1) 처리하면 성장된 텅스텐 실사이드 입자의 입계효과에 의하여 텅스텐 실리사이드의 표면에 SiO$_2$뿐만 아니라 WO$_3$가 형성되는 이상산화가 발생되어 공정의 어려움을 야기시키고 있다. 본 실험에서는 post anneal ($700^{\circ}C$, 30min, $N_2$ 분위기) 시킨 시편을 Implantation(As 또는 phosphorous)을 실시하여 실리사이드 표면을 비정질화 시킨후 Furnace anneal 실시하여 이상산화 발생 억제에 I/I처리가 미치는 효과를 관찰하였다. XPS를 이용하여 이상산화막 두께와 WO$_3$존재를 조사하였고, AES를 사용하여 W, Si, O 원소들이 깊이에 따라 변하는 것을 관찰하였다.

• Advances in Energy Research
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• 제1권2호
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• pp.117-126
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• 2013

In this paper, core-shell semiconductor quantum dots (QDs) CdSeS/ZnS with emission at 490 nm and 450 nm were investigated for their use in luminescent down-shifting (LDS) layers. Luminescent quantum yield (LQY) of the QDs measurements in solution proposed that they were suitable candidates for inclusion in LDS layers. QDs were encapsulated in poly(methyl,methacrylate) (PMMA) polymer matrix and films were fabricated of $134{\pm}0.05$ microns. Selections of organic dyes from BASF Lumogen F range were also investigated for their use as LDS layers; Violet 570 and Yellow 083. The addition of LDS layers containing Violet 570 dye demonstrated a unity LQY when encapsulated within a PMMA matrix. A PV device of an LDS layer of Lumogen Violet 570 deposited on top of a crystalline silicon cell was fabricated where it was demonstrated to increase the efficiency of the cell by 34.5% relative.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2003년도 하계학술대회 논문집 C
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• pp.1592-1594
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• 2003

This paper presents the deposition and characterization of microcrystalline silicon(${\mu}c$-Si:H) films by HWCVD(Hot-wire Chemical Vapor Deposition) method at low substrate($300^{\circ}C$). The filament temperature, pressure and $SiH_4$ concentration were determined to be a critical parameter for the deposition of poly-Si films. Series A was deposited under the conditions of $1380^{\circ}C$(Tf), 100 mTorr and $2{\sim}10%\{SC:SiH_4/(SiH_4+H_2)\}$ for 60 min. Series B was deposited under the conditions of $1400{\sim}1450^{\circ}(T_f)$, 30 mTorr and $2{\sim}12%$(SC) for 60 min. The physical characteristics were measured by Raman and FTIR spectroscopy, dark and photoconductivity measurements under AM1.5 illumination.

• 한국전기전자재료학회논문지
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• 제15권1호
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• pp.61-66
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• 2002

A method for designing antireflection (AR) and antistatic (AS) coating layer by the use of conducting polymer as an electrically conductive transparent layer is proposed. The conducting AR coating is composed of four-layer with alternating high and low refractive index layer: silicon dioxide (n=1.44) and titanium dioxide (n=2.02) prepared at low temperature by sol-gel method are used as the low and high refractive index layer, respectively. The poly(3,4-ethylenedioxythiophene) which has the surface resistivity of 10$^4$Ω/$\square$ is used as a conductive layer. Optical constant of each ARAS coating layers such as refractive index and optical thickness were measured by 7he spectroscopic ellipsometer and from the measured optical constants the spectral properties such as reflectance and transmittance were simulated in the risible region. The reflectance of ARAS films on glass substrate was below 1 %R and the transmittance was higher than 95 % in the visible wavelength (400-700 nm). The measured AR spectral properties was very similar to its simulated results.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.15-18
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• 2003

Ta-Ti metal alloy is proposed for alternate gate electrode of ULSI MOS device. Ta-Ti alloy was deposited directly on $SiO_2$ by a co-sputtering method and good interface property was obtained. The sputtering power of each metal target was 100W. Thermal and chemical stability of the electrode was studied by annealing at $500^{\circ}C$ and $600^{\circ}C$ in Ar ambient. X-ray diffraction was measured to study interface reaction and EDX(energy dispersive X-ray) measurement was performed to investigate composition of Ta and Ti element. Electrical properties were evaluated on MOS capacitor, which indicated that the work function of Ta-Ti metal alloy was ${\sim}4.1eV$ compatible with NMOS devices. The measured sheet resistance of alloy was lower than that of poly silicon.

• 한국재료학회지
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• 제18권1호
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• pp.5-11
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• 2008

Thermally evaporated 10 nm-Ni/1 nm-Au/(30 nm-poly)Si structures were fabricated in order to investigate the thermal stability of Au-inserted nickel silicide. The silicide samples underwent rapid thermal annealing at $300{\sim}1100^{\circ}C$ for 40 seconds. The sheet resistance was measured using a four-point probe. A scanning electron microscope and a transmission electron microscope were used to determine the cross-sectional structure and surface image. High-resolution X-ray diffraction and a scanning probe microscope were employed for the phase and surface roughness. According to sheet resistance and XRD analyses, nickel silicide with Au had no effect on widening the NiSi stabilization temperature region. Au-inserted nickel silicide on a single crystal silicon substrate showed nano-dots due to the preferred growth and a self-arranged agglomerate nano phase due to agglomeration. It was possible to tune the characteristic size of the agglomerate phase with silicidation temperatures. The nano-thick Au-insertion was shown to lead to self-arranged microstructures of nickel silicide.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.214-217
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• 2004

숭화법을 이용한 탄화규소(Silicon carbide) 단결정 성장시 사용되는 원료의 상(phase)이 단결정 성장에 미치는 영향을 알아보기 위해 알파형 탄화규소 분말(${\alpha}-SiC$ powder)과 베타형 탄화규소 분말(${\beta}-SiC$ powder)을 각각 사용하였다. 알파형 탄화규소 분말을 사용한 경우에 단결정(single-crystal)을 성장할 수 있었으나, 베타형 탄화규소 분말을 사용하였을 때에는 다결정(poly-crystal)이 성장되었다. 다결정 형성요인에 관한 EPMA 분석결과, 베타형 탄화규소 분말의 탄소에 대한 실리콘의 원소조성비$(N_{Si}/N_C\;=\;1.57)$가 알파형 탄화규소 분말의 경우보다$(N_{Si}/N_C\;=\;0.81)$ 높음을 확인하였다. 따라서 흑연도가니(crucible) 내부의 실리콘 원자가 알파형 탄화규소 분말을 사용하는 경우보다 높은 과포화상태가 되어 종자정 표면에 미세한 실리콘 액적(droplet)이 중착되고 이것으로부터 일정하지 않은 방향성(random orientation)을 갖는 탄화규소 다결정(다양한 방향성을 갖는 다형 포함)이 성장한 것으로 실리콘과 탄소 원소에 대한 EPMA 지도(map) 결과를 통해 확인할 수 있었다.