Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Characteristics of Ta-Ti alloy Metal for NMOS Gate Electrodes

NMOS 게이트 전극에 사용될 Ta-Ti 합금의 특성

  • Kang, Young-Sub (Hankook Aviation University, Department of Electronic Engineering) ;
  • Lee, Chung-Keun (Hankook Aviation University, Department of Electronic Engineering) ;
  • Kim, Jae-Young (Hankook Aviation University, Department of Electronic Engineering) ;
  • Hong, Shin-Nam (Hankook Aviation University, Department of Electronic Engineering)
  • 강영섭 (한국항공대학교 전자공학과) ;
  • 이충근 (한국항공대학교 전자공학과) ;
  • 김재영 (한국항공대학교 전자공학과) ;
  • 홍신남 (한국항공대학교 전자공학과)
  • Published : 2003.11.13
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Abstract

Ta-Ti metal alloy is proposed for alternate gate electrode of ULSI MOS device. Ta-Ti alloy was deposited directly on $SiO_2$ by a co-sputtering method and good interface property was obtained. The sputtering power of each metal target was 100W. Thermal and chemical stability of the electrode was studied by annealing at $500^{\circ}C$ and $600^{\circ}C$ in Ar ambient. X-ray diffraction was measured to study interface reaction and EDX(energy dispersive X-ray) measurement was performed to investigate composition of Ta and Ti element. Electrical properties were evaluated on MOS capacitor, which indicated that the work function of Ta-Ti metal alloy was ${\sim}4.1eV$ compatible with NMOS devices. The measured sheet resistance of alloy was lower than that of poly silicon.

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