• Title/Summary/Keyword: poly paper

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Demonstration Study of 10kW Poly Metal Panel integrated PV Module (10kW급 지붕재용 태양전지모듈 실증연구)

  • Yi, So-Mi;Noh, Ji-Hee;Joo, Man-Sic
    • 한국신재생에너지학회:학술대회논문집
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    • 2007.11a
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    • pp.246-249
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    • 2007
  • The application of photovoltaics into building as integrated building components has been paid more attention worldwide. Photovoltaics or solar electric modules are sol id state devices, directly converting solar radiation into electricity; the process does not require fuel and any moving parts, and produce no pollutants. And the prefab building method is very effective because the pre- manufactured building components is simply assembled to making up buildings in the construction fields especially the sandwich panel. So, this paper describes a design and performance test of the 10kW poly metal pv module(pmpp) system. It is concluded that the prediction of BIPV system's performance should be based on the more accurate PV module installation.

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Effect of Coating Methods on the Properties of Poly(lactide)-coated Paperboard: Solution Coating vs. Thermo-compression Coating

  • Rhim, Jong-Whan
    • Food Science and Biotechnology
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    • v.18 no.5
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    • pp.1155-1160
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    • 2009
  • Poly(lactide) (PLA)-coated paperboards were prepared by solution coating and thermo-compression coating methods and their effect of coating on the packaging properties such as tensile, water resistance, water vapor barrier, and heat sealing properties was tested. Compared with uncoated control paperboard, tensile strength (TS) of PLA-coated paperboard increased profoundly (2.2-2.6 folds) with slight increase in elongation at break (E). Water absorptiveness (WA) of the paperboard decreased 74-170 folds and water vapor permeability (WVP) decreased 6.3-22.1 folds by coating with PLA, which indicates an increase in the hydrophobicity of the surface of paperboard. Compared with polyethylene (PE)-coated paperboard, both PLA-coated paperboard exhibited 2.3 time higher heat sealing strength. In addition, the PLA-coated paperboards showed equal or higher wet TS than PE-coated paperboard. All the test results showed that the paperboard coated by the thermo-compression coating method was similar to or better than those of coated by the solution coating method.

New Doping Process for low temperature poly silicon TFT

  • Park, Kyung-Min;You, Chun-Gi;Kim, Chi-Woo
    • 한국정보디스플레이학회:학술대회논문집
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    • 2005.07a
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    • pp.303-306
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    • 2005
  • We report the self-aligned low temperature poly silicon (LTPS) TFT process using simple doping process. In conventional LTPS-TFT, the Lightly Doped Drain (LDD) doping and source/drain doping are processed separately by aligning the gate with the source and drain during the gate lithography step. This ne w process not only fabricates fully self-aligned low temperature poly silicon TFTs with symmetric LDD structure but also simplifies the process flow with combined source/drain doping and LDD doping in one step. LDD doping process can be achieved using only source/drain doping process according to the new structure. In this paper, the TFT characteristics of NMOS and PMOS using the new doping process will be discussed.

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Degradation of short channel poly-Si TFTs due to electrical stress (짧은채널 길이의 다결정 실리콘박막트랜지스터의 전기적 스트레스에 대한연구)

  • Choi, K.Y.;Kim, Y.S.;Han, M.K.
    • Proceedings of the KIEE Conference
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    • 1994.07b
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    • pp.1442-1444
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    • 1994
  • The short channel poly-Si TFT is important in aspect of transistor characteristics, packing density and aperture ratio. In this paper, we have reported the degradation phenomena of short channel poly-Si TFT's which had significantly degraded device parameters, such as threshold voltage shift and a great asymmetric degradation, due to gate and drain electrical stress. The reduced effective channel length and expanded depletion region may be the main reason of these significant device parameters.

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Study on Piezoresistive Humidity Sensor using Polycrystalline Silicon with Membrane (박막구조를 가진 폴리실리콘 압저항형 습도센서의 연구)

  • Park, Sung-Il;Park, Se-Kwang
    • Proceedings of the KIEE Conference
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    • 1994.07b
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    • pp.1422-1424
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    • 1994
  • This paper deals with piezoresistive humidity sensor using polycrystalline silicon (Poly-Si ) with membrane in sensors of semiconductor. Poly-Si piezoresistors which have no temperature dependancy are deposited on silicon wafer, membrane is formed with micromachining technology, then polyimide is formed as a hygroscopic layer. Whereas the principle of conventional humidify sensors are based on the change in electrical properties of the material, the humidity induced volume change of a polyimide layer leads to a deformation of a silicon membrane in this case. This deformation is transformed into an output voltage by Poly-Si piezoresistive. Wheatstone bridge. Fabricated piezoresistive humidity sensors showed good linearity, response time, and long term stability.

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Emission Properties of Electroluminescent Device Using Poly(3-hexylthiophene) as Emilting Material (The Poly(3-hexylthiophene)을 발광층으로 사용한 전계 발광소자의 발광특성)

  • 김주승;구할본;조재철
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1999.05a
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    • pp.263-266
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    • 1999
  • Electrolunlinescent devices based on conjugated polymer emitting materials have been much attracted possible applications for multicolor flat panel display, since the conjugated polymers have a small band gap emitting obtained at a low driving voltage. In this paper, we fabricated the single layer EL device using poly(3-hexylthiophene) as emitting material Electroluminescence(EL) and I-V-L characteristics of indium-tin-oxide[ITO]P3HT/AI device with a various thickness were investigated. It was demonstrate that the I-V characteristics depend, not the voltage but the electric- field strength, The current is dependent on the electric filed and not on the applied voltage, indicating that the carriers are injected by a tunneling process. In the device, the barrier to hole injection is only 0.5eV and the barrier to electron injection is 1.5eV.

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A Study of a Surface Modeling Interpolating a Polygonal Curve Net Constructed from Scattered Points (점군으로부터 형성된 다각곡선망을 보간하는 곡면모델링에 관한 연구)

  • Ju, Sang-Yoon;Jun, Cha-Soo
    • Journal of Korean Institute of Industrial Engineers
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    • v.21 no.4
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    • pp.529-540
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    • 1995
  • The paper deals with a procedure for constructing a composite surface interpolating a polygonal curve mesh defined from 3D scattered points. The procedure consists of a poly-angulation, construction of a curve net, and interpolation of the curve net. The poly-angulation contains a stage that changes a triangular edge net obtained from a triangulation into a poly-angular edge net. A curve net is constructed by replacing edges on the edge net with cubic Bezier curves. Finally, inside of an n-sided polygon is interpolated by n subdivided triangular subpatches. The method interpolates given point data with relatively few triangular subpatches. For an n-sided polygon, our method constructs an interpolant with n subdivided triangular subpatches while the existing triangular surface modeling needs 3(n-2) subpatches. The obtained surface is composed of quartic triangular patches which are $G^1$-continuous to adjacent patches.

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Characteristics of Programming on Analog Memory Cell Fabricated in a 0.35$\mu{m}$Single Poly Standard CMOS Process (0.35$\mu{m}$ 싱글폴리 표준 CMOS 공정에서 제작된 아날로그 메모리 셀의 프로그래밍 특성)

  • 채용웅;정동진
    • The Transactions of the Korean Institute of Electrical Engineers D
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    • v.53 no.6
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    • pp.425-432
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    • 2004
  • In this paper, we introduce the analog memory fabricated in a 0.35${\mu}{\textrm}{m}$ single poly standard CMOS process. We measured the programming characteristics of the analog memory cell such as linearity, reliability etc. Finally, we found that the characteristics of the programming of the cell depend on the magnitude and the width of the programming pulse, and that the accuracy of the programming within 10mV is feasible under the optimal condition. In order to standardize the characteristics of the cell, we have investigated numbers of cells. Thus we have used a program named Labview and a data acquisition board to accumulate the data related to the programming characteristics automatically.

Driving System Design for Poly-Si TFT LCD of EWS (EWS급 Poly-Si TFT-LCD의 구동 시스템 설계)

  • Heon, Kwon-Byong;Park, Jong-Kwan;Cho, Kyu-Min;Choi, Myoung-Ryeul
    • Proceedings of the KIEE Conference
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    • 1999.07g
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    • pp.3120-3122
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    • 1999
  • In this paper we have designed the signal processing system for driving the Poly-Si TFT LCD of EWS. The signal processing system consist of timing controller, ramp signal generator and video signal processing system. Timing controller includes the top-down inversion. left right inversion, left-right shifting and control signal generator according to multi-source signal. The video signal processing system generates sawtooth-shaped waveform by using PROM and DAC for multi-gray scales and implements gamma correction function for compensating the TFT-LCD nonlinear charcteristic of the TFT-LCD. Finally we have discussed the experiment results and its application according to the designed TFT-LCD driving system.

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Investigation of Electro-optical Characteristics in A-TN-LCD on Poly(vinyl)cinnamate Surfaces (Poly(vinyl)cinnamate막을 이용한 A-TN-LCD의 전기광학 특성)

  • 서대식;박지호;이보호
    • Electrical & Electronic Materials
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    • v.10 no.6
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    • pp.576-580
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    • 1997
  • In this paper, the viewing angle characteristics of amorphous (a) - twisted nematic (TN)-liquid crystal display (LCD) on poly(vinyl)cinnamate (PVC) surface with UV (ultraviolet) light irradiation were investigated. It was found that the threshold voltage increases with increasing the polymerization of PVC surfaces. We observed that the domain size of a-TN-LCD decreases with increasing the photo polymerization by increasing UV light irradiation time on PVC films. Also, we observed that the viewing angle of a-TN-LCD increased with increasing the photo polymerization on PVC surfaces. Finally, we consider that the viewing angle of a-TN-LCD on PVC surfaces is large compared to a-TN-LCD on polyimide (PI) surface.

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