• 한국통신학회논문지
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• 제24권12B호
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• pp.2292-2297
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• 1999

기상레이다에 수신되는 도플러 스펙트럼의 약 25%는 비대칭 스펙트럼, 즉 skewed spectrum 인 것으로 알려지고 있다. 그러나 기상정보의 추출을 위하여 가장 널리 쓰이고 있으며 효율적인 것으로 알려진 기존의 펄스페어 추정방법은 도플러 스펙트럼이 대칭형 또는 매우 좁은 주파수 대역을 갖는다는 가정을 전제로 하고 있다. 따라서 본 논문에서는 이와 같은 가정이 만족되지 않을 경우 기상레이다에서의 스펙트럼 모멘트들의 추정치에 상당한 편향오차가 발생할 수 있음을 정량적으로 분석하였다. 또한 이러한 편향오차가 상대적으로 심각한 평균 도플러 주파수 추정치의 정확도를 향상시키기 위하여 다중 펄스페어 추정기법을 제안하였다. 제안한 방법을 적용할 경우 편향오차가 현저히 줄어들을 확인할 수 있었다.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2005년도 추계종합학술대회
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• pp.747-750
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• 2005

In this paper, we propose a new level shifter circuit for reducing power consumption. The concept of the proposed level shifter is to use capacitive coupling effect to reduce short circuit current. The power consumption of the proposed level shifter is reduced up to 50%, compared to the conventional level shifter. Especially the proposed level shifter circuit works well with low temperature poly-Si (LTPS) TFTs. It can operate on low input voltage even with low-mobility, high and widely-varying threshold voltage of LTPS TFT.

• Bulletin of the Korean Chemical Society
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• 제26권12호
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• pp.2027-2032
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• 2005

This paper demonstrates details of thermal behavior of Langmuir-Blodgett (LB) film of poly(tert-butyl methacrylate) (PtBMA) by using the principal component analysis based two-dimensional correlation spectroscopy (PCA2D) through eigenvalue manipulating transformation (EMT). By uniformly lowering the power of a set of eigenvalues associated with the original data, the smaller eigenvalues becomes more prominent and the subtle contribution from minor components is now highlighted much more strongly than the original data. Thus, the subtle difference of thermal behavior of LB film of PtBMA from minor components, which is not readily detectable in the conventional 2D correlation analysis, is much more noticeable than the original data. PCA2D correlation spectra with EMT operation for the temperature-dependent IR spectra of LB film of PtBMA reveal the hidden property of phase transition processes during heating.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1992년도 하계학술대회 논문집 B
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• pp.1022-1024
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• 1992

The multiple poly-phase converters to be overcome the current limits of switching devices have the merits of the lessen weight and ripple. This paper deals with the circuit analysis of the poly-phase buck converters with discontinuous inductor current. The dc and ac models are obtained by the average method of the state equations.

• 센서학회지
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• 제17권4호
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• pp.256-260
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• 2008

This paper describes the mechanical properties of poly(polycrystalline) 3C-SiC thin films with various doping concentration, in which poly 3C-SiC thin fil's mechanical properties according to the n-doping concentration 1($9.2{\times}10^{15}cm^{-3}$), 3($5.2{\times}10^{17}cm^{-3}$), and 5%($6.8{\times}10^{17}cm^{-3}$) respectively were measured by nano indentation. In the case of $9.2{\times}10^{15}cm^{-3}n$-doping concentration, Young's modulus and hardness were obtained as 270 and 30 GPa, respectively. When the surface roughness according to n-doping concentrations was investigated by AFM(atomic force microscope), the roughness of poly 3C-SiC thin films doped by 5% concentration was 15 nm, which is also the best of them.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.1162-1165
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• 2006

In this paper, the characteristics of polycrystalline silicon thin-film transistors (poly- Si TFTs) fabricated on polymer substrates are investigated. The a-Si films was laser annealed by using a XeCl excimer laser and a four-mask-processed poly-Si TFT was fabricated with fully self-aligned top gate structure. The fabricated nMOS TFT showed field-effect mobility of ${\sim}30\;cm^2/Vs$, on/off ratio of $10^5$ and threshold voltage of 5 V.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 영호남학술대회 논문집
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• pp.131-134
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• 2000

Electroluminescent[EL] from conjugated polymers has recently received great attention because polymer light-emitting diodes[LEDs] clearly have potential for applications such as large-area displays. The operation of polymer LEDs is based on double injection of electrons and holes from the electrodes, followed by formation of excitons whose radiative decay results in light emission at wavelength characteristic to the material In this paper, we fabricated the single layer EL device using poly(3-octylthiophene)[P3OT] as emitting material. The orange-red light was clearly visible in a dark room Maximum peak wavelength of EL spectrum saw at 640nm in accordance with photon energy 1.9eV. And we know that ionization energy of P3OT is 4.7eV from the cyclic voltammetry.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.93-93
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• 2008

This paper presents the Raman scattering characteristics of poly (polycrystalline) 3C-SiC thin films deposited on AlN buffer layer by atmospheric pressure chemical vapor deposition (APCVD) using hexamethyldisilane (MHDS) and carrier gases (Ar + $H_2$).The Raman spectra of SiC films deposited on AlN layer of before and after annealings were investigated according to the growth temperature of 3C-SiC. Two strong Raman peaks, which mean that poly 3C-SiC admixed with nanoparticle graphite, were measured in them. The biaxial stress of poly 3C-SiC/AlN was calculated as 896 MPa from the Raman shifts of 3C-SiC deposited at $1180^{\circ}C$ on AlN of after annealing.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2003년도 하계종합학술대회 논문집 II
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• pp.1105-1108
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• 2003

In this paper, we have fabricated the hydrogenated n-channel polysilicon thin film transistor (TFT) with LDD structure and have analyzed the hot carrier degradation characteristics by electrical stress. We have compared the threshold voltage (Vth), sub-threshold slope (S), and trans-conductance (Gm) for devices with LDD (Lightly Doped Drain) structure and non-LDD at same active sizes. We have analyzed the hot carrier effects by the hydrogenation in devices. As a analyzed results, the threshold voltage, sub-threshold slope for n-channel poly-si TFT were increased, trans-conductance was decreased. The effects of hydrogenation in n-channel poly-si TFT with LDD structure were shown the lower variations of characteristics than devices of the non-LDD structure with nomal process.

• 전자공학회논문지A
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• 제33A권6호
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• pp.151-157
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• 1996

We propose a mechanism for the formation of pinholes in the Si-buffer layer, through the observations with varying the process- and structure variables in the SEPOX (selective poly-oxidation) process, an isolation method for sub-u DRAMs. Pinholes are formed through the accumulation of Si vacancies generated by the oxidation of Si, in which Si atoms leave the sites (vacancies) at the Si/SiO$_{2}$ interfaces and diffuse into the oxide to be oxidized near interface. In the course of the accumulation of Si-vacancies, the stress induced in the Si-buffer layer affects the migration of vacancies to result in the final size and distribution of pinholes. This paper may be, to our knowledge, the first report about the oxidation-induced pinhole in the Si/SiO$_{2}$ system.