• 한국응용과학기술학회지
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• 제27권2호
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• pp.216-221
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• 2010

Polyvinyl acetate (PVAc) prepared by emulsion polymerization has broad applications for additive such as paint binder, adhesive for wood and paper due to its low glass transition temperature which help to plasticize substrate resins. Since emulsion polymerization has a disadvantage that surfactant and ionic initiator degrade properties of the product polymer, poly (vinyl acetate-eo-ethyl acrylate) (VAc-EA) was synthesized using potassium persulfate as catalyst and polyvinylalcohol (PVA) as protective colloid to prevent the degradation. The copolymer latex product was internally plasticized and has enhanced adhesion, water resistance during VAc-EA emulsion polymerization. No coagulation and complete conversion occur with the reactant mixture of 10 mmol/L potassium persulfate, 10 mmol/L poly ( vinyl alcohol) (PVA 17). As the concentrations of PVA increase, the viscosity becomes increase.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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• pp.677-680
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• 1999

Rapid developing automation technology enhances the need of sensors. Among many materials, silicon has the advantages of electrical and mechanical property, Single-crystalline silicon has different piezoresistivity on 야fferent directions and a current leakage at elevated temperature, but poly-crystalline silicon has the possibility of controling resistivity using dopping ions, and operation at high temperature, which is grown on insulating layers. Each wafer has slightly different thicknesses that make difficult to obtain the precisely same thickness of a diaphragm. This paper deals with the fabrication process to make poly-crystalline silicon based pressure sensors which includes diaphragm thickness and wet-etching techniques for each layer. Diaphragms of the same thickness can be fabricated consisting of deposited layers by silicon bulk etching. HF etches silicon nitride, HNO$_3$+HF does poly -crystalline silicon at room temperature very fast. Whereas ethylenediamice based etchant is used to etch silicon at 11$0^{\circ}C$ slowly.

• International Journal of CAD/CAM
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• 제1권1호
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• pp.23-32
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• 2002

In this paper, a new technique of space deformation for parametric surfaces with so-called extension function (EF) is presented. Firstly, a special extension function is introduced. Then an operator matrix is constructed on the basis of EF. Finally the deformation of a surface is achieved through multiplying the equation of the surface by an operator matrix or adding the multiplication of some vector and the operator matrix to the equation. Interactively modifying control parameters, ideal deformation effect can be got. The implementation shows that the method is simple, intuitive and easy to control. It can be used in such fields as geometric modeling and computer animation.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.324-327
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• 2000

In this paper, the effects of negative and positive bias stress on p-channel poly-Si TFT's fabricated by excimer laser annealing have been investigated After positive and negative bias stress, transcon-ductance(g$_{m}$) is increased because of a reduction of the effective channel length due to the injected electron in the gate oxide. In the positive bias stress, the injection of hole is appeared after stress time of 3600sec and g$_{m}$ is decreased. On the other hand, the gate voltage at the maximum g$_{m}$, S-swing and threshold voltage(V$_{th}$) are decreased because of the interface state generation due to the injection of electrons into the gate oxide.e.ide.e.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.201-204
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• 2001

In this paper, for modeling of electrical characteristics in Poly Silicon Thin Film Transistors with process parameters set up optimum values. So, the I-V characteristics of poly silicon TFT parameters are examined and simulated in terms of the variations in process parameter. And these results compared and analyzed simulation values with examination value. The simulation program for characteristic analysis used SUPREM IV for processing, Matlab for modeling by mathematics, and SPICE for electric characteristic of devices. Input parameter for simulation characteristics is like condition of device process sequence, these electric characteristic of I$_{D}$-V$_{D}$, I$_{D}$-V$_{G}$, variations of grain size. The Gate oxide thickness of poly silicon are showed similar results between real device characteristics and simulation characteristics.ristics.

• 센서학회지
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• 제18권3호
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• pp.222-225
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• 2009

This paper describes the fabrication and characteristics of Schottky micro hydrogen sensors for high temperatures by using polycrystalline(poly) 3C-SiC thin films grown on Si substrates with thermal oxide layer using APCVD. Pd/poly 3C-SiC Schottky diodes were made and evaluated by I-V and C-V measurements. Electric current density and barrier height voltage were $2{\times}10^{-3}A/cm^2$ and 0.58 eV, respectively. These devices could operate stably at about 400 $^{\circ}$. The characteristics of implemented sensors have been investigated in terms of sensitivity, linearity of response, response rate, and response time. Therefore, from these results, Pd/poly 3C-SiC Schottky devices have very high potential for high temperature $H_2$ sensor applications.

• 센서학회지
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• 제17권6호
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• pp.414-417
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• 2008

This paper describes the fabrication of a Pd/poly 3C-SiC Schottky diode and its characteristics, in which the poly 3C-SiC layer and Pd Schottky contact were deposited by using APCVD and sputter, respectively. Crystalline quality, uniformity, and preferred orientations of the Pd thin film were evaluated by SEM and XRD, respectively. Pd/poly 3C-SiC schottky diodes were fabricated and characterized by I-V and C-V measurements. Its electric current density Js and barrier height voltage were measured as $2{\times}10^{-3}A/cm^2$ and 0.58 eV, respectively. These devices were operated until about $400^{\circ}C$. Therefore, from these results, Pd/poly 3C-SiC Schottky devices have very high potential for high temperature chemical sensor applications.

• 한국인쇄학회지
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• 제18권2호
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• pp.143-151
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• 2000

A previous paper was reported in being sensetized photopolymer, poly(vinyl cinnamoyl acetate)(PVCiA)$^{1.2)}$ with some squarylium dyes such as 1,3-bis(4 or 6-trifluoromethyl-1,3,3-trimethylindo)squarylium dyes(TFSQ) and 1,3-bis(4 or 6-nitro-1,3,3-trimethylindo)(NISQ). Here, we synthesized new 1,3-bis(1,3,3-trimethylpyridylindo)squarylium dyes(PSQD) to sensetize photopolymer, such as poly(vinyl cinnamoyl acetate). Absorption's coefficient of (PSQDI) was 9.78$\times$10$^{5}$ , highest absorption's coefficient among them synthesized by author, and the sensitivity of PVCiA added with PSQD1 (3%) was highly sensitized about 16 times than not added, and higher than NISQ(3%). PSQD1 with substituted 4 and 7 positions by nitrogen is rich in n-$\pi$＊ transition, resulted in high absorption's coefficient, red shift for another squarylium dyes, and afforded to the highest sensitivity of PVCiA.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 학술대회 및 기술세미나 논문집 디스플레이 광소자
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• pp.62-63
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• 2006

In this paper, the characteristics of polycrystalline silicon thin-film transistors (poly-Si TFTs) fabricated on polymer substrates are investigated. The a-Si films was laser annealed by using a XeCl excimer laser and a four-mask-processed poly-Si TFT was fabricated with fully self-aligned top gate structure. The fabricated nMOS TFT showed field-effect mobility of $30cm2/V{\cdot}s$, on/off ratio of 105 and threshold voltage of 5 V.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.131-131
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• 2009

This paper describes the fabrication and characteristics of polycrystalline (poly) 3C-SiC microresonators with $3{\times}10^{17}{\sim}1{\times}10^{19}cm^{-3}$ in-situ N-doping concentrations. In this work, the crystallinity, carrier concentration and surface morphology of the grown thin films were evaluated by X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM). The 1.2 ${\mu}m$ thick cantilvers and the 0.4 ${\mu}m$ thick doubly-clamped beam microresonators with various lengths were implemented using in-situ doping poly 3C-SiC thin films. The characteristics of the poly 3C-SiC microresonators were evaluated using quartz and a laser vibrometer under vacuum at room temperature. The resonant frequencies of the SiC microresonators decreased with doping concentrations owing to the reduction of the Young's modulus of the poly 3C-SiC thin films. It was confirmed that the resonant frequencies of the poly 3C-SiC microresonators are controllable by adjusting the doping concentrations.