• Journal of Information Display
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• v.1 no.1
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• pp.25-28
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• 2000

We propose a new in-situ fluorine passivation of poly-Si TFTs using excimer laser annealing to reduce the trap state density and improve reliability significantly. To investigate the effect of an in-situ fluorine passivation, we have fabricated fluorine-passivated p-channel poly-Si TFTs and examined their electrical characteristics and stability. A new in-situ fluorine passivation brought about an improvement in electrical characteristic. Such improvement is due to the formation of stronger Si-F bonds than Si-H bonds in poly-Si channel and $SiO_2$/Poly-Si interface.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.9
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• pp.623-627
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• 1999

We report a new in-situ fluorine passivation method without in implantation by employing excimer laser annealing of $SiO_{x}F_{y}$/a-Si structure and its effects on p-channel poly-Si TFTs. The proposed method doesn't require any additional annealing step and is a low temperature process because fluorine passivation is simultaneous with excimer-laser-induced crystallization. A in-situ fluorine passivation by the proposed method was verified form XPS analysis and conductivity measurement. From experimental results, it has been shown that the proposed method is effective to improve the electrical characteristics, specially field-effect mobility, and the electrical stability of p-channel poly-Si TFTs. The improvement id due to fluorine passivation, which reduces the trap state density and forms the strong Si-F bonds in poly-Si channel and $SiO_2/poly-Si$ interface. From these results, the high performance poly-Si TFTs canbe obtained by employing the excimer-laser-induced fluorine passivation method.

• Journal of the Institute of Electronics and Information Engineers
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• v.51 no.3
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• pp.177-184
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• 2014

In chemical vapor deposition(CVD) tungsten silicide(WSix) dual poly gate(DPG) scheme, we observed the fluorine effects on gate oxide using the electrical and physical measurements. It is found that in fluorine-rich WSix NMOS transistors, the gate thickness decreases as gate length is reduced, and it intensifies the roll-off properties of transistor. This is because the fluorine diffuses laterally from WSix to the gate sidewall oxide in addition to its vertical diffusion to the gate oxide during gate re-oxidation process. When the channel length is very small, the gate oxide thickness is further reduced due to a relative increase of the lateral diffusion than the vertical diffusion. In PMOS transistors, it is observed that boron of background dopoing in $p^+$ poly retards fluorine diffusion into the gate oxide. Thus, it is suppressed the fluorine effects on gate oxide thickness with the channel length dependency.

• Proceedings of the Korean Fiber Society Conference
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• 2002.04a
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• pp.265-267
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• 2002

섬유를 제조함에 있어 기존의 방법으론 수 마이크론의 섬유를 만들지만 전기방사를 이용한 방법으로는 마이크론이하의 직경을 가진 섬유를 만들수 있어 전기방사에 관한 관심이 증가하고 있다. 전기방사란 고분자 용액 및 용융된 고분자에 고전압을 걸어주어 섬유를 받아주는 콜렉터와 방사되는 팁 사이에 전기장을 형성시켜 부직포를 제조하는 방법이다. 일반적으로 불소를 포함한 방향족 고분자는 그들의 구조 때문에 외부열에 대한 저항력, 내화학성, 기계적, 전기적 특성이 우수하다고 잘 알려져 있다. (중략)

• Journal of the Korean Vacuum Society
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• v.5 no.4
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• pp.327-332
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• 1996

In this study, the effects of $WSi_x$, thickness and fluorine concentration in tungsten polycide gate structure on gate oxide were investigated. As $WSi_x$, thickness increases, gate oxide thickness increases with fluorine incorporation in gate oxide, and time-to-breakdown($T_{BD,50%}$) of oxide decreases. The stress change with $WSi_x$ thickness was also examined. But it is understood that the dominant factor to degrade gate oxide properties is not the stress but the fluorine, incorporated during $WSi_x$ deposition, diffused into $WSiO_2$ after heat treatment. In order to understand the effect of fluorine diffusion into oxidem fluorine ion implanted gates were compared. The thickness variation and $T_{BD,50%}$ of gate oxide is saturated over 600 $\AA$ thickness of $WSi_x$. The TEM and SIMS studies show the microstructure less than 600 $\AA$ thickness is dense and flat in surface. However, over 600$\AA$, the microstructure of $WSi_x$ is divided into two parts: upper porous phase with rugged surface and lower dense phase with smmoth interface. And this upper phase is transformed into oxygen rich crystalline phase after annealing, and the fluorine is captured in this layer. Therefore, the fluorine diffusion into the gate oxide is saturated.

• 한국정보디스플레이학회:학술대회논문집
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• 2000.01a
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• pp.155-156
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• 2000

We propose a new in-situ fluorine passivation of poly-Si TFTs by excimer laser annealing to reduce the trap density and improve the reliability significantly. This improvement is due to the formation of stronger Si-F bonds than Si-H bonds which passivate the trap states.

• Bulletin of the Korean Chemical Society
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• v.32 no.5
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• pp.1471-1474
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• 2011

A series of new polymers containing 1,2,3-triazoles were synthesized and their structures and properties were characterized by FT-IR, $^1H$ NMR, TGA, DSC and GPC. The results showed that the polymers modified by alkyl groups had good solubility, thermal stability and reasonable molecular weights. It was also demonstrated that the properties of fluorine-containing polymers were seriously affected by fluorine atoms with hydrophobic and chemical proof properties.

• JSTS:Journal of Semiconductor Technology and Science
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• v.12 no.1
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• pp.41-45
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• 2012

We observed that in chemical vapor deposition (CVD) tungsten silicide (WSix) poly gate scheme, the gate oxide thickness decreases as gate length is reduced, and it intensifies the roll-off properties of transistor. This is because the fluorine diffuses laterally from WSix to the gate sidewall oxide in addition to its vertical diffusion to the gate oxide during gate re-oxidation process. When the channel length is very small, the gate oxide thickness is further reduced due to a relative increase of the lateral diffusion than the vertical diffusion. In DRAM cells where the channel length is extremely small, we found the thinned gate oxide is a main cause of poor retention time.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.317-319
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• 2008

Photo-alignment layer which contains cinnamate is difficult to generate pretilt angle of liquid crystals. In order to enhance pretilt angle, blending poly (amic acid) between containing fluorine poly (amic acid) and 1,2,3,4-cyclobutanetetracaroxylic dianhydride (CBDA) / 3,5-diaminobenzyl alcohol (DBA) were used. For photoreaction, cinnamate was conjugated by interfacial reaction with blending polyimide.

• Membrane Journal
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• v.17 no.4
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• pp.345-351
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• 2007

In this research, by using the fluorine gas, the poly(ether sulfone) (PES), the polysulfone (PSf), and the poly-vinylidenefluoride (PVDF) membranes were modified to improve the performance of the optional Gas-Liquid Contactor The SEM, surface contact angle, XPS, and the water transmission minimum pressure test was performed in order to examine the characteristics of which is surface modified. As a result of looking into the surface morphology of from the SEM measurement, we could know that the roughness of the membrane surface increased as the fluorine processing time increased. $-CH_2$, and the perfluoro group of $-CH_3$ were chemically combined with the surface fluorine conversion film surface and the hydrophobicity was exposed to be increased. Moreover, we could know that as the surface fluorinated processing time increased from the surface contact angle and water transmission minimum pressure test, the measured value increased and the overall characteristics were improved.