• Title/Summary/Keyword: polishing characteristics

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Surface Properties of Electrolytic-Polished 316L Stainless Steel Welding Tube for Semi-Conductor Fab. - As the Relation of Electrolysis Conditions with Surface Characteristics - (반도체 제조 설비용 전해 연마된 STS316L 용접강관의 표면 성질 - 전해 조건과 표면 성상의 관계를 중심으로 -)

  • Kim, Ki-Ho;Cho, Bo-Yeon
    • Journal of Surface Science and Engineering
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    • v.41 no.1
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    • pp.38-42
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    • 2008
  • 316L stainless steel welding tube was electrolytically polished and the inner surface characteristics of the tube were tested. Electro-polishing variables such as current, voltage, concentration of electrolyte and electropolishing time were changed to seek for optimum condition. These makes a optimum conditions for the electro-polishing as 4000 A, 9 V, 1.7 specific gravity of electrolyte, and 30 minute of electro-polishing time. It makes the surface roughness as Ra < $0.25{\mu}m$. XPS test resulted as the ratio of CrO/FeO equals or more to 3/1. AES test resulted as the thickness of CrO film of $38{\AA}$. DTA test resulted as the tube did not react with $N_2,\;H_2\;and\;O_2$ gas below 1073K. As summarize above results, the electro- polished 316L stainless steel welding tube satisfied the conditions to apply as a pipeline for semi- conductor production facility and clean room.

A Three-Dimensional CFD Study on the Air Flow Characteristics in a Wax Spin Coater for Silicon Wafer Manufacturing (실리콘 웨이퍼 생산공정용 왁스 스핀코팅장치 내 기류 특성에 대한 3차원 전산유동해석)

  • Kim, Yong-Ki;Kim, Dong-Joo;Umarov, Alisher;Kim, Kyoung-Jin;Park, Jun-Young
    • Journal of the Korean Society of Manufacturing Process Engineers
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    • v.10 no.6
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    • pp.146-151
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    • 2011
  • Wax spin coating is a part of several wafer handling processes in the silicon wafer polishing station. It is important to ensure the wax layer free of contamination to achieve the high degree of planarization on wafers after wafer polishing. Three-dimensional air flow characteristics in a wax spin coater are numerically investigated using computational fluid dynamics techniques. When the bottom of the wax spin coater is closed, there exists a significant recirculation zone over the rotating ceramic block. This recirculation zone can be the source of wax layer contamination at any rotational speed and should be avoided to maintain high wafer polishing quality. Thus, four air suction ducts are installed at the bottom of the wax spin coater in order to control the air flow pattern over the ceramic block. Present computational results show that the air suction from the bottom is quite an effective method to remove or minimize the recirculation zone over the ceramic block and the wax coating layer.

Chemical Mechanical Polishing (CMP) Characteristics of Ferroelectric Film (강유전체막의 CMP 연마 특성)

  • Seo, Y.J.;Park, S.W.;Kim, K.T.;Kim, C.I.;Chang, E.G.;Kim, S.Y.;Lee, W.S.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.11a
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    • pp.140-143
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    • 2003
  • BST thin films have a good thermal-chemical stability, insulating effect and variety of phases. However, BST thin films have problems of the aging effect and mismatch between the BST thin film and electrode. Also, due to the high defect density and surface roughness at grain boundarys and in the grains, which degrades the device performances. In order to overcome these weakness, we first applied the chemical mechanical polishing (CMP) process to the polishing of ferroelectric film in order to obtain a good planarity of electrode/ferroelectric film interface. BST ferroelectric film was fabricated by the sol-gel method. And then, we compared the structural characteristics before and after CMP process of BST films. We expect that our results will be useful promise of global planarization for FRAM application in the near future.

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Evaluation of Friction and Wear Characteristics of Carbon-based Solid Lubricant Films for Surface Application of Compressor Parts (압축기 부품소재 표면 적용을 위한 탄소 기반 고체 윤활막의 마찰 및 마모 특성 평가)

  • Lee, Sung-Jun;Kim, Chang-Lae
    • Tribology and Lubricants
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    • v.38 no.5
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    • pp.222-226
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    • 2022
  • Between diaphragms made of stainless steel (SUS), which is the main component of a hydrogen gas compressor, micro-slip occurs owing to repeated bending, resulting in scratches on the surface. The surface scratch of the compressor part is a problem with airtightness, which reduces the efficiency of the compressor; in severe cases, damage is a possibility. In this study, the changes in friction and wear characteristics due to the surface polishing of SUS and carbon-based solid lubricant films (graphene and CNT) were analyzed. Bare SUS, polished SUS, graphene film, and CNT film specimens were prepared. The surface roughness of the SUS was significantly reduced by surface polishing but increased by carbon-based solid lubricating films. In contrast, the friction coefficient maintained a similar value after surface polishing but was significantly reduced by the carbon-based solid lubricant films. In particular, the graphene film exhibited the lowest initial friction coefficient, while the CNT film exhibited the lowest overall average friction coefficient. Regarding the wear rate, polished SUS exhibited the lowest value, but the surface condition of the wear track showed that the carbon-based solid lubricating films were relatively less damaged. Although the wear rate measured was largely attributed to the solid lubricating film peeling off, the SUS surface under the film was considered protected.

Investigation on the Effect of Corrosion Inhibitor on Removal Rate and Surface Characteristic of Cobalt Chemical Mechanical Polishing (부식 방지제에 따른 코발트의 화학 기계적 연마 특성 및 표면 분석)

  • Eun Su Jung;Sung Gyu Pyo
    • Journal of Surface Science and Engineering
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    • v.57 no.3
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    • pp.140-154
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    • 2024
  • As the trend towards miniaturization in semiconductor integration process, the limitations of interconnection metals such as copper, tungsten have become apparent, prompting research into the emergence of new materials like cobalt and emphasizing the importance of studying the corresponding process conditions. During the chemical mechanical polishing (CMP) process, corrosion inhibitors are added to the slurry, forming passivation layers on the cobalt surface, thereby playing a crucial role in controlling the dissolution rate of the metal surface, enhancing both removal rate and selectivity. This review investigates the understanding of the cobalt polishing process and examines the characteristics and behavior of corrosion inhibitors, a type of slurry additive, on the cobalt surface. Among the corrosion inhibitors examined, benzotriazole (BTA), 1,2,4-triazole (TAZ), and potassium oleate (PO) all improved surface characteristics through their interaction with cobalt. These findings provide important guidelines for selecting corrosion inhibitors to optimize CMP processes for cobalt-based semiconductor materials. Future research should explore combinations of various corrosion inhibitors and the development of new compounds to further enhance the efficiency of semiconductor processes.

Annealing effects of CMP slurry abrasives (CMP 슬러리 연마제의 어닐링 효과)

  • Park, Chang-Jun;Jeong, So-Young;Kim, Chul-Bok;Choi, Woon-Shik;Seo, Yong-Jin
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.05d
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    • pp.105-108
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    • 2003
  • CMP(chemical mechanical polishing) process has been attracted as an essential technology of multi-level interconnection. However, the COO(cost of ownership) is very high, because of high consumable cost. Especially, among the consumables, slurry dominates more than 40 %. So, we focused how to reduce the consumption of raw slurry. In this paper, We have studied the CMP (chemical mechanical polishing) characteristics of slurry by adding of raw alumina abrasive and annealed alumina abrasive. As a experimental results, we obtained the comparable slurry characteristics compared with original silica slurry in the view point of high removal rate and low non-uniformity. Therefore, we can reduce the cost of consumables(COC) of CMP process for ULSI applications.

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A Deburring Characteristics of Small Punching Holes using Micro Press (마이크로 프레스에 의한 미세 펀칭 홀의 디버링 특성)

  • 윤종학;안병운;박성준
    • Transactions of the Korean Society of Machine Tool Engineers
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    • v.13 no.3
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    • pp.61-67
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    • 2004
  • In micro hole punching process the burr occurs inevitably, but the burr must be minimized in order to improve the quality and accuracy of the product. In this study, magnetic field-assisted polishing technique is applied to remove the burr which exists in nozzles for ink-jet printer head and proved to be a feasible for deburring by experiment. The deburring characteristics of sheet metals was investigated changing with polishing time and magnetic abrasive size. After the deburring, the burr size has remarkably reduced and roundness of the hole also has improved.

Planarization characteristics as a function of polishing time of STI-CMP process (STI CMP 공정의 연마시간에 따른 평탄화 특성)

  • 김철복;서용진;김상용;이우선;장의구
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.07a
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    • pp.33-36
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    • 2001
  • Chemical mechanical polishing(CMP) process has been widely used to planarize dielectric layers, which can be applied to the integrated circuits for deep sub-micron technology. The rise throughput and the stability in the device fabrication can be obtained by applying of CMP process to STI structure in 0.18$\mu\textrm{m}$ m semiconductor device. The reverse moat process has been added to employ in of each thin films in STI-CMP was not equal, hence the devices must to be effected, that is, the damage was occurred in the device area for the case of excessive CMP process and the nitride film was remained on the device area for the case of insufficient CMP process, and than, these defects affect the device characteristics. Also, we studied the High Selectivity Slurry(HSS) to perform global planarization without reverse moat step.

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Surface Characteristics of Polishing Pad by Diamond Conditioner Conditions (다이아몬드 컨디셔너 조건에 따른 폴리싱 패드의 표면 특성)

  • Yu, Hwan-Su;Choi, Eun-Suck;Bae, So-Ik;Park, Sung-Il
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.11a
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    • pp.55-56
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    • 2006
  • This research was carried out to observe the structure and characteristics of SUBA pad for silicon wafer polishing. As the diamond size is smaller and shape is rounder, the pad cut rate becomes smaller. From the experimental results, we suggests that the diamond grade should be over 680 when the diamond mesh is between #100 and #170 for SUBA pad.

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Chemical Mechanical Polishing (CMP) Characteristics of Ferroelectric BST Thin Film (강유전체막의 CMP 특성)

  • Park, Sung-Woo;Kim, Nam-Hoom;Lee, Woo-Sun;Seo, Yong-Jin
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.11a
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    • pp.719-722
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    • 2004
  • In this work, we applied the chemical mechanical polishing (CMP) process to the planarization of ferroelectric film. We compared the structural characteristics of BST $(Ba_{0.6}Sr_{0.4}TiO_3)$ films before and after the CMP process. Their dependence on slurry composition was also investigated. Finally, we suggest the self-developed titania $(TiO_2)$ mixed abrasive slurry (MAS) for FRAM applications. Our experimental results on the ferroelectric film are encouraging for the next generation of FRAM applications.

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