Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2003.11a
- /
- Pages.140-143
- /
- 2003
Chemical Mechanical Polishing (CMP) Characteristics of Ferroelectric Film
강유전체막의 CMP 연마 특성
- Seo, Y.J. (DAEBUL University) ;
- Park, S.W. (DAEBUL University) ;
-
Kim, K.T.
(Chung-Ang University)
;
-
Kim, C.I.
(Chung-Ang University)
;
-
Chang, E.G.
(Chung-Ang University)
;
- Kim, S.Y. (Donbu-Anam Semiconductor) ;
- Lee, W.S. (Chosun University)
- 서용진 (대불대학교 전기공학과) ;
- 박성우 (대불대학교 전기공학과) ;
-
김경태
(중앙대학교 전자전기공학부)
;
-
김창일
(중앙대학교 전자전기공학부)
;
-
장의구
(중앙대학교 전자전기공학부)
;
- 김상용 (동부아남반도체) ;
- 이우선 (조선대학교 전기공학과)
- Published : 2003.11.13
Abstract
BST thin films have a good thermal-chemical stability, insulating effect and variety of phases. However, BST thin films have problems of the aging effect and mismatch between the BST thin film and electrode. Also, due to the high defect density and surface roughness at grain boundarys and in the grains, which degrades the device performances. In order to overcome these weakness, we first applied the chemical mechanical polishing (CMP) process to the polishing of ferroelectric film in order to obtain a good planarity of electrode/ferroelectric film interface. BST ferroelectric film was fabricated by the sol-gel method. And then, we compared the structural characteristics before and after CMP process of BST films. We expect that our results will be useful promise of global planarization for FRAM application in the near future.
Keywords
- Chemical mechanical polishing(CMP);
- ferroelectrics;
- sol-gel technique;
- BST;
- FRAM;
- surface roughness;
- grain;
- grain boundary;
- high defect density