• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 기술교육전문연구회
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• pp.75-81
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• 2003

This study evaporates ZnO layer thickness differently with RF sputtering method on Si Wafer(n-100). This study is performed to examine the characteristics of photon energy and dielectric loss according to the thickness of ZnO and increase the reliability and reproduction of ZnO thin film. It is confirmed that the variation of electric Permittivity by frequency is resulted from the formation of particles within thin film, the particle size and the polarization on grain boundary. Peak of electric Permittivity value of thin film has slower and less value in early low wavelength by the coulomb force involved in carrier combination according to the increase of frequency. Reversal of electric Permittivity values is induced by dipole polarization shown in the dielectric of thin film. Complex electric constant $({\varepsilon}_1{\varepsilon}_2)$ has larger peak values as it’s thickness is thinner and then it is larger according to the increase of frequency. Electric Permittivity by photon energy has large value in imaginary number and is reduced exponentially by the increase of carrier density according to that of photon energy.

• 한국전기전자재료학회논문지
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• 제15권9호
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• pp.764-769
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• 2002

The effect of excess Bi contents on the ferroelectric properties of B $i_{3.25}$ L $a_{0.75}$ $Ti_3$ $O_{12}$ (BLT) thin films has been investigated. Bismuth lanthanum titanate thin films with excess Bi contents were prepared onto Pt/Ti/ $SiO_2$/Si substrate by metalorganic decomposition (MOD) technique. The structure and morphology of the films were analyzed using X-ray diffraction (XRD) and atomic force microscopy (AFM), respectively. From the XRD analysis, BLT thin films show polycrystalline structure and the layered-perovskite phase was obtained over 10% excess of Bi contents. As a result of ferroelectric characteristics related to the Bi content of the BLT thin film, the remanent polarization and dielectric constant decreased with increasing over Bi content of 10% excess. The BLT film with Bi content of 10% excess was measured to have a dielectric constant of 326 and dielectric loss of 0.024. The BLT thin films showed little polarization fatigue test up to 3.5$\times$10$^{9}$ bipolar switching cycling.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2004년도 추계학술대회 논문집 전기물성,응용부문
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• pp.75-78
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• 2004

$Bi_{3.25}Eu_{0.75}Ti_3O_{12}$ (BET) thin films were deposited on the $LaNiO_3$ (LNO (100))/Si and Pt/Ti/$SiO_2$/Si substrates by the metal-organic decomposition method. Structural and dielectric properties of BLT thin films for the applications in nonvolatile ferroelectric random access memories were investigated. Both the structure and morphology of the films were analyzed by x-ray diffraction (XRD) and atomic force microscope (AFM). Even at low temperatures $650^{\circ}C$, the BET thinfilms were successfully deposited on LNO bottom electrode and exhibited (001) and (117) orientation. Compared with the Pt electrode films, the BET thin films on the LNO electrode annealed at $650^{\circ}C$ showed better dielectric constantsand remanent polarization. The BET thin films on the LNO electrode for the annealing temperature of $650^{\circ}C$, the remanent polarization Pr and coercive field were $45.6\;C/cm^2$ and 171 kV/cm, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.352-355
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• 2003

[ $Bi_{3.25}La_{0.75}Ti_3O_{12}$ ] (BLT) thin films were prepared by using metal organic decomposition method onto the LaNiO3 (LNO) bottom electrode. Both the structure and morphology of the films were analyzed by x-ray diffraction (XRD) and atomic force microscope (AFM). Even at low temperatures ranging from 450 to $650^{\circ}C$, the BLT thin films were successfully deposited on LNO bottom electrode and exhibited (117) orientation. The BLT thin films annealed as low as $600^{\circ}C$ showed excellent ferroelectricity, higher remanent polarization and no significant degradation of switching charge at least up to $5{\times}10^9$ switching cycles at a frequency of 100 kHz and 5 V. For the annealing temperature of $600^{\circ}C$, the remanent polarization $P_r$ and coercive field were $23.5\;{\mu}C/cm^2$ and 120 kV/cm, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 제4회 영호남학술대회 논문집
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• pp.73-79
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• 2002

This study evaporates ZnO layer thickness' differently with RF sputtering method on Si Wafer(n-100). This study is performed to examine the characteristics of photon energy and dielectric loss according to the thickness of ZnO and increase the reliability and reproduction of ZnO thin film. It is confirmed that the variation of electric Permittivity by frequency is resulted from the formation of particles within thin film, the particle size and the polarization on grain boundary. Peak of electric Permittivity value of thin film has slower and less value in early low wavelength by the coulomb force involved in carrier combination according to the increase of frequency. Reversal of electric Permittivity values is induced by dipole polarization shown in the dielectric of thin film. Complex electric constant $({\varepsilon}_1,{\varepsilon}_2)$ has larger peak values as it's thickness is thinner and then it is larger according to the increase of frequency. Electric Permittivity by photon energy has large value in imaginary number and is reduced exponentially by the increase of carrier density according to that of photon energy.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.66-66
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• 2007

Lead zirconate titanate (PZT) is one of the most attractive perovskite-type materials for ferroelectric random access memory (FRAM) due to its higher remanant polarization and the ability to withstand higher coercive fields. We first applied the damascene process using chemical mechanical polishing (CMP) to fabricate the PZT thin film capacitor to solve the problems of plasma etching including low etching profile and ion charging. The $0.8{\times}0.8\;{\mu}m$ square patterns of silicon dioxide on Pt/Ti/$SiO_2$/Si substrate were coated by sol-gel method with the precursor solution of PZT. Damascene process by CMP was performed to pattern the PZT thin film with the vertical sidewall and no plasma damage. The polarization-voltage (P-V) characteristics of PZT capacitors and the current-voltage characteristics (I-V) were examined by change of process parameters. To examine the CMP induced damage to PZT capacitor, the domain structure of the polished PZT thin film was also investigated by piezoresponse force microscopy (PFM).

• 대한금속재료학회지
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• 제47권9호
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• pp.558-566
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• 2009

The alloying effect of a small amount of nickel on low alloy steel for application to flue gas desulfurization(FGD) systems was studied. The structural characteristics of the rust layer were investigated by scanning electron microscopy(SEM). The electrochemical properties were examined by means of potentiostatic polarization test, potentiodynamic polarization test, and electrochemical impedance spectroscopy(EIS) in a modified green death solution of 16.9 vol.% $H_2SO_4$+0.35 vol.% HCl at $60^{\circ}C$ and an acid rain solution of $6.25{\times}10^{-5}M\;H_2SO_4+5.5{\times}10^{-3}M\;NaCl$ at room temperature. It was found that as the amount of nickel increased, the corrosion rate increased in the modified green death solution, which seemed to result from micro-galvanic corrosion between NiS and alloy matrix. In acid rain solution, the corrosion rate decreased as the amount of nickel increased due to the repulsive force of $NiFe_2O_4$ rust against $Cl^-$ ions by electronegativity.

• Applied Biological Chemistry
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• 제1권
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• pp.48-54
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• 1960

5-Iodopyrimidines와 Human serum albumin 간(間)의 결합(結合)에 있어 이들의 결합량(結合量)은 첫째 5-Iodopyrimidines 분자내(分子內) Iodine에 대(對)한 Introducing group이 변(變)함에 따라 변(變)하게 된다. 다시 말해서 결합량(結合量)은 5-Iodopyrimidines 분자내(分子內) 보다 강(强)한 electron donating group이 존재(存在) 함에 따라 한층 더 증가하게 된다고 말할 수 있다. 둘째 이들 두 물질간(物質間)의 결합량(結合量)은 또한 PH 증가에 따라서도 증가한다고 말할 수 있는데 이는 PH 증가에 따라 Human serum albumin 분자자체내(分子自體內)의 Configuration이 변(變)하게 됨으로서 분자내(分子內) electrostatic repulsion에 의(依)한 새로운 결합부분(結合部分)이 증가될 것이며, 이 부분(部分)에서의 복합체(復合體)를 형성(形成)함에 기인(基因)한다고 생각된다. 이러한 실험적(實驗的) 결과(結果)를 토대로 하여 5-Iodopyrimidines가 antithyroid action과 어떠한 관계(關係)를 갖고 있는가의 실험(實驗)을 함으로서 결합량(結合量)에 따른 antithyroid activity 서열(序列)을 결정(決定)할 수도 있을 것이다.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2013년도 임시총회 및 하계학술연구발표회
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• pp.15-16
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• 2013

Magnetization behavior of ultra thin $Fe_xCo_{1-x}$ alloy (where x varies from 0 to 100) has been investigated as functions of composition on Cr (100) substrate by using in situ surface magneto optical Kerr effect (SMOKE). It's always show in plane uniaxial magnetic anisotropy at room temperature (RT) & Low temperature (LT). It is observed that composition dependent coercive force maximum at about 30 at % Co and 70 at % Co atomic ratio and minimum near equiatomic site. The relative magnetic moments as composition variation also show magnetization collapse near equiatomic site. The magnetization behaviors of Fe-Co alloy on Cr (100) due to composition varies are supported the order-disordering as well as structural stability bcc (ferromagnetic)/fcc (anti-ferromagnetic) phase stability magnetism.

• 한국복합재료학회:학술대회논문집
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• 한국복합재료학회 2001년도 춘계학술발표대회 논문집
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• pp.106-109
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• 2001

In this work, we investigate the toughening mechanism of the rubber-modified epoxy resin. The fracture toughness($K_{IC}$) is measured using CT specimens for three kinds of rubber-modified epoxy resin with different rubber content. The damage zone and rubber particles around a crack tip of a damaged specimen just before fracture are observed by a polarization microscope and an atomic force microscope(AFM). Both the fracture energy($G_{IC}$) and the size of damage zone increase with the rubber content below l5wt%. The size of the rubber particles can be qualitatively correlated with the $G_{IC}$ and the size of damage zone. The cavitation of the rubber particles inside the damage zone is observed, which is expected to be main toughening mechanism by rubber particles. the stress which causes the cavitation of rubber particles is estimated by the Dugdale model.