The Photon Energy Characteristics of ZnO Thin Film Fabricated by RF Sputtering

RF Sputtering으로 제작한 ZnO 박막의 Photon Energy 특성

This study evaporates ZnO layer thickness' differently with RF sputtering method on Si Wafer(n-100). This study is performed to examine the characteristics of photon energy and dielectric loss according to the thickness of ZnO and increase the reliability and reproduction of ZnO thin film. It is confirmed that the variation of electric Permittivity by frequency is resulted from the formation of particles within thin film, the particle size and the polarization on grain boundary. Peak of electric Permittivity value of thin film has slower and less value in early low wavelength by the coulomb force involved in carrier combination according to the increase of frequency. Reversal of electric Permittivity values is induced by dipole polarization shown in the dielectric of thin film. Complex electric constant $({\varepsilon}_1,{\varepsilon}_2)$ has larger peak values as it's thickness is thinner and then it is larger according to the increase of frequency. Electric Permittivity by photon energy has large value in imaginary number and is reduced exponentially by the increase of carrier density according to that of photon energy.