• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2008.10a
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• pp.579-582
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• 2008

Three dimensional(3D) Poisson's equation is used to calculate the potential variation in the channel to analyze subthreshold current and short channel effect(SCE). The analytical model has been presented to lessen calculating time and understand the relationship of parameters. The accuracy of this model has been verified by the data from 3D numerical device simulator and variation for dimension and process parameters has been explained. The model has been developed to obtain channel potential of FinFET according to channel doping and to calculate subthreshold current and threshold voltage.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.17 no.4
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• pp.917-921
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• 2013

This paper have analyzed the change of breakdown voltage for conduction path of double gate(DG) MOSFET. The low breakdown voltage among the short channel effects of DGMOSFET have become obstacles of device operation. The analytical solution of Poisson's equation have been used to analyze the breakdown voltage, and Gaussian function been used as carrier distribution to analyze closely for experimental results. The change of breakdown voltages for conduction path have been analyzed for device parameters such as channel length, channel thickness, gate oxide thickness and doping concentration. Since this potential model has been verified in the previous papers, we have used this model to analyze the breakdown voltage. Resultly, we know the breakdown voltage is greatly influenced on the change of conduction path for device parameters of DGMOSFET.

• Composites Research
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• v.16 no.3
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• pp.49-57
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• 2003

This paper presents the tensile characteristics for carbon/epoxy, carbon/phenolic and silica/phenolic composites under elevated temperature, which are considered for vehicle structure or thermal protection materials. The tensile test was conducted with servo-hydraulic testing machine and high temperature furnace, and the mechanical properties such as tensile strength, elastic modulus and Poisson's ratio were evaluated by using high temperature strain gages. Also, they were compared each other with respect to fiber orientation and temperature effect. These test results were used for designing and analyzing some airframe structures with these composites.

• KSII Transactions on Internet and Information Systems (TIIS)
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• v.11 no.1
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• pp.61-77
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• 2017

The most challenging issues in the multi-channel MAC of the IEEE 1609.4 standard is how to handle the dynamic vehicular traffic condition with a high mobility, dynamic topology, and a trajectory change. Therefore, dynamic channel coordination schemes between CCH and SCH are required to provide the proper bandwidth for CCH/SCH intervals and to improve the quality of service (QoS). In this paper, we use a Markov model to optimize the interval based on the dynamic vehicular traffic condition with high mobility nodes in the multi-channel MAC of the IEEE 1609.4 standard. We evaluate the performance of the three-dimensional Markov chain based on the Poisson distribution for the node distribution and velocity. We also evaluate the additive white Gaussian noise (AWGN) effect for the multi-channel MAC coordination scheme of the IEEE 1609.4 standard. The result of simulation proves that the performance of the dynamic channel coordination scheme is affected by the high node mobility and the AWGN. In this research, we evaluate the model analytically for the average delay on CCHs and SCHs and also the saturated throughput on SCHs.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.7 s.361
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• pp.16-23
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• 2007

For a fully depleted SOI type symmetric double gate MOSFET, a simple expression for the threshold voltage has been derived in a closed-form To solve analytically the 2D Poisson's equation in a silicon body, the two-dimensional potential distribution is assumed approximately as a polynomial of fourth-order of x, vertical coordinate perpendicular to the silicon channel. From the derived expression for the surface potential, the threshold voltage can be obtained as a simple closed-form. Simulation result shows that the threshold voltage is exponentially dependent on channel length for the range of channel length up to $0.01\;[{\mu}m]$.

• Journal of the Korea institute for structural maintenance and inspection
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• v.6 no.1
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• pp.223-231
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• 2002

The pilot tests for the development of biaxial failure envelope of high strength concrete of reactor containments were performed. To apply biaxial loads to concrete, the plate specimens were used. The technical difficulties encountered on the development of a suitable biaxial test setup were discussed. To decide the optimum thickness of plate specimen, the nonlinear finite element analyses using ABAQUS were performed for a 1/8 model of cylindrical specimen(${\Phi}150{\times}300$) and four 1/4 models of plate Specimens ($200{\times}200{\times}T$(=30, 50, 60, 70)mm) under uniaxial compression. Analytical values and test data of relative strength ratio between those specimens with different geometric shapes were also compared. The various test data were obtained under uniaxial compression, uniaxial tension, and biaxial compression and then the stress-strain responses were plotted. The test data indicated that the strength of concrete under biaxial compression, $f_1/f_2=-1/-1$, is 15 percent larger than that under uniaxial compression and the poisson's ratio of concrete is 0.16. Teflon pads employed to eliminate friction between test specimen and loading platens showed an excellent effect under biaxial compression.

• Korea-Australia Rheology Journal
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• v.17 no.4
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• pp.207-215
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• 2005

We present a finite difference solution for electrokinetic flow in rectangular microchannels encompassing Navier's fluid slip phenomena. The externally applied body force originated from between the nonlinear Poisson-Boltzmann field around the channel wall and the flow-induced electric field is employed in the equation of motion. The basic principle of net current conservation is applied in the ion transport. The effects of the slip length and the long-range repulsion upon the velocity profile are examined in conjunction with the friction factor. It is evident that the fluid slip counteracts the effect by the electric double layer and induces a larger flow rate. Particle streak imaging by fluorescent microscope and the data processing method developed ourselves are applied to straight channel designed to allow for flow visualization of dilute latex colloids underlying the condition of simple fluid. The reliability of the velocity profile determined by the flow imaging is justified by comparing with the finite difference solution. We recognized the behavior of fluid slip in velocity profiles at the hydrophobic surface of polydimethylsiloxane wall, from which the slip length was evaluated for different conditions.

• Journal of the Semiconductor & Display Technology
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• v.8 no.3
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• pp.31-37
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• 2009

This paper presents one and two dimensional simulation results with discontinuous features (shocks) of capacitively coupled rf plasmas. The model consists of the first two and three moments of the Boltzmann equation for the ion and electron fluids respectively, coupled to Poisson's equation for the self-consistent electric field. The local field and drift-diffusion approximations are not employed, and as a result the charged species conservation equations are hyperbolic in nature. Hyperbolic equations may develop discontinuous solutions even if their initial conditions are smooth. Indeed, in this work, secondary electron emission is shown to produce transient electron shock waves. These shocks form at the boundary between the cathodic sheath (CS) and the quasi-neutral (QN) bulk region. In the CS, the electrons emitted from the electrode are accelerated to supersonic velocities due to the large electric field. On the other hand, in the QN the electric field is not significant and electrons have small directed velocities. Therefore, at the transition between these regions, the electron fluid decelerates from a supersonic to a subsonic velocity in the direction of flow and a jump in the electron velocity develops. The presented numerical results are consistent with both experimental observations and kinetic simulations.

• Structural Engineering and Mechanics
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• v.72 no.3
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• pp.293-304
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• 2019

In this paper, a general model is developed to predict the distribution of interfacial shear and normal stresses of FG beam reinforced by porous FGM plates under mechanical loading. The beam is assumed to be isotropic with a constant Poisson's ratio and power law elastic modulus through the beam thickness. Stress distributions, depending on an inhomogeneity constant, were calculated and presented in graphicals forms. It is shown that both the normal and shear stresses at the interface are influenced by the material and geometry parameters of the composite beam, and it is shown that the inhomogeneities play an important role in the distribution of interfacial stresses. The results presented in the paper can serve as a benchmark for future analyses of functionally graded beams strengthened by imperfect varying properties plates. Numerical comparisons between the existing solutions and the present new solution enable a clear appreciation of the effects of various parameters. The results of this study indicated that the imperfect functionally graded panel strengthening systems are effective in enhancing flexural behavior of the strengthened FGM beams. This research is helpful in understanding the mechanical behaviour of the interface and design of hybrid structures.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.34 no.2
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• pp.142-147
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• 2021

We present a subthreshold swing model for a symmetric junctionless double gate MOSFET. The scale length λ1 required to obtain the potential distribution using the Poisson's equation is a criterion for analyzing the short channel effect by an analytical model. In general, if the channel length Lg satisfies Lg > 1.5λ1, it is known that the analytical model can be sufficiently used to analyze short channel effects. The scale length varies depending on the channel and oxide thickness as well as the dielectric constant of the channel and the oxide film. In this paper, we obtain the scale length for a constant permittivity (silicon and silicon dioxide), and derive the relationship between the scale length and the channel length satisfying the error range within 5%, compared with a numerical method. As a result, when the thickness of the oxide film is reduced to 1 nm, even in the case of Lg < λ1, the analytical subthreshold swing model proposed in this paper is observed to satisfy the error range of 5%. However, if the oxide thickness is increased to 3 nm and the channel thickness decreased to 6 nm, the analytical model can be used only for the channel length of Lg > 1.8λ1.